Impact of H2 High-Pressure Annealing Onto InGaAs Quantum-Well Metal–Oxide–Semiconductor Field-Effect Transistors With Al2O3/HfO2 Gate-Stack

IEEE Electron Device Letters ◽

10.1109/led.2015.2438433 ◽

2015 ◽

Vol 36 (7) ◽

pp. 672-674 ◽

Author(s):

Tae-Woo Kim ◽

Hyuk-Min Kwon ◽

Seung Heon Shin ◽

Chan-Soo Shin ◽

Won-Kyu Park ◽

...

Keyword(s):

High Pressure ◽

Quantum Well ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Ingaas Quantum Well

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L$_{\mathrm {g}} = 80$ -nm Trigate Quantum-Well In0.53Ga0.47As Metal–Oxide–Semiconductor Field-Effect Transistors With Al2O3/HfO2 Gate-Stack

IEEE Electron Device Letters ◽

10.1109/led.2015.2393554 ◽

2015 ◽

Vol 36 (3) ◽

pp. 223-225 ◽

Author(s):

Tae-Woo Kim ◽

Dong-Hyi Koh ◽

Chan-Soo Shin ◽

Won-Kyu Park ◽

Tommaso Orzali ◽

...

Keyword(s):

Quantum Well ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

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High-Electron-Mobility Ge n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with High-Pressure Oxidized Y2O3

Applied Physics Express ◽

10.1143/apex.4.064201 ◽

2011 ◽

Vol 4 (6) ◽

pp. 064201 ◽

Author(s):

Tomonori Nishimura ◽

Choong Hyun Lee ◽

Toshiyuki Tabata ◽

Sheng Kai Wang ◽

Kosuke Nagashio ◽

...

Keyword(s):

High Pressure ◽

Metal Oxide ◽

Electron Mobility ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility

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Ge0.83Sn0.17 P-Channel Metal-Oxide-Semiconductor Field- Effect Transistors: Impact of Sulfur Passivation on Gate Stack Quality

Design, Simulation and Construction of Field Effect Transistors ◽

10.5772/intechopen.74532 ◽

2018 ◽

Author(s):

Dian Lei ◽

Xiao Gong

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Sulfur Passivation

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Interface trap density and mobility extraction in InGaAs buried quantum well metal-oxide-semiconductor field-effect-transistors by gated Hall method

Applied Physics Letters ◽

10.1063/1.4870257 ◽

2014 ◽

Vol 104 (13) ◽

pp. 131605 ◽

Author(s):

Thenappan Chidambaram ◽

Dmitry Veksler ◽

Shailesh Madisetti ◽

Andrew Greene ◽

Michael Yakimov ◽

...

Keyword(s):

Quantum Well ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Trap Density ◽

Oxide Semiconductor ◽

Interface Trap Density ◽

Interface Trap ◽

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Modeling and Characterization of InAs Quantum-Well Metal-Oxide-Semiconductor Field Effect Transistors on Quartz for 1.0 THz Wave Detection

2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) ◽

10.1109/edtm47692.2020.9117824 ◽

2020 ◽

Author(s):

T. Maeda ◽

H. Ishii ◽

W. H. Chang ◽

H. Kanaya ◽

T. Asano

Keyword(s):

Quantum Well ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Thz Wave ◽

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Dramatic enhancement of low electric-field hole mobility in metal source/drain Ge p-channel metal-oxide-semiconductor field-effect transistors by introduction of Al and Hf into SiO2/GeO2 gate stack

Applied Physics Letters ◽

10.1063/1.4821546 ◽

2013 ◽

Vol 103 (12) ◽

pp. 122106 ◽

Author(s):

Keisuke Yamamoto ◽

Takahiro Sada ◽

Dong Wang ◽

Hiroshi Nakashima

Keyword(s):

Electric Field ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Hole Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

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A Self-Aligned InGaAs Quantum-Well Metal–Oxide–Semiconductor Field-Effect Transistor Fabricated through a Lift-Off-Free Front-End Process

Applied Physics Express ◽

10.1143/apex.5.064002 ◽

2012 ◽

Vol 5 (6) ◽

pp. 064002 ◽

Author(s):

Jianqiang Lin ◽

Tae-Woo Kim ◽

Dimitri A. Antoniadis ◽

Jesús A. del Alamo

Keyword(s):

Quantum Well ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Front End ◽

Effect Transistor ◽

Lift Off ◽

Ingaas Quantum Well

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Interfacial Reaction of TiN/HfSiON Gate Stack in High-Temperature Annealing for Gate-First Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.1921 ◽

2007 ◽

Vol 46 (4B) ◽

pp. 1921-1928 ◽

Author(s):

Takeo Matsuki ◽

Seiji Inumiya ◽

Nobuyuki Mise ◽

Takahisa Eimori ◽

Yasuo Nara

Keyword(s):

High Temperature ◽

Metal Oxide ◽

Interfacial Reaction ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Temperature Annealing ◽

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Ge0.83Sn0.17 p-channel metal-oxide-semiconductor field-effect transistors: Impact of sulfur passivation on gate stack quality

Journal of Applied Physics ◽

10.1063/1.4939761 ◽

2016 ◽

Vol 119 (2) ◽

pp. 024502 ◽

Author(s):

Dian Lei ◽

Wei Wang ◽

Zheng Zhang ◽

Jisheng Pan ◽

Xiao Gong ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Sulfur Passivation

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Anomalous negative bias temperature instability behavior in p-channel metal-oxide-semiconductor field-effect transistors with HfSiON∕SiO2 gate stack

Applied Physics Letters ◽

10.1063/1.2745649 ◽

2007 ◽

Vol 90 (23) ◽

pp. 233505

Author(s):

Shih-Chang Chen ◽

Chao-Hsin Chien ◽

Jen-Chung Lou

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability

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