Ge0.83Sn0.17 P-Channel Metal-Oxide-Semiconductor Field- Effect Transistors: Impact of Sulfur Passivation on Gate Stack Quality

Design, Simulation and Construction of Field Effect Transistors ◽

10.5772/intechopen.74532 ◽

2018 ◽

Author(s):

Dian Lei ◽

Xiao Gong

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Stack ◽

Sulfur Passivation

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Ge0.83Sn0.17 p-channel metal-oxide-semiconductor field-effect transistors: Impact of sulfur passivation on gate stack quality

Journal of Applied Physics ◽

10.1063/1.4939761 ◽

2016 ◽

Vol 119 (2) ◽

pp. 024502 ◽

Cited By ~ 24

Author(s):

Dian Lei ◽

Wei Wang ◽

Zheng Zhang ◽

Jisheng Pan ◽

Xiao Gong ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Stack ◽

Sulfur Passivation

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Impact of H2 High-Pressure Annealing Onto InGaAs Quantum-Well Metal–Oxide–Semiconductor Field-Effect Transistors With Al2O3/HfO2 Gate-Stack

IEEE Electron Device Letters ◽

10.1109/led.2015.2438433 ◽

2015 ◽

Vol 36 (7) ◽

pp. 672-674 ◽

Cited By ~ 15

Author(s):

Tae-Woo Kim ◽

Hyuk-Min Kwon ◽

Seung Heon Shin ◽

Chan-Soo Shin ◽

Won-Kyu Park ◽

...

Keyword(s):

High Pressure ◽

Quantum Well ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Stack ◽

Ingaas Quantum Well

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Dramatic enhancement of low electric-field hole mobility in metal source/drain Ge p-channel metal-oxide-semiconductor field-effect transistors by introduction of Al and Hf into SiO2/GeO2 gate stack

Applied Physics Letters ◽

10.1063/1.4821546 ◽

2013 ◽

Vol 103 (12) ◽

pp. 122106 ◽

Cited By ~ 20

Author(s):

Keisuke Yamamoto ◽

Takahiro Sada ◽

Dong Wang ◽

Hiroshi Nakashima

Keyword(s):

Electric Field ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Hole Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Stack ◽

Metal Source

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Interfacial Reaction of TiN/HfSiON Gate Stack in High-Temperature Annealing for Gate-First Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.1921 ◽

2007 ◽

Vol 46 (4B) ◽

pp. 1921-1928 ◽

Cited By ~ 5

Author(s):

Takeo Matsuki ◽

Seiji Inumiya ◽

Nobuyuki Mise ◽

Takahisa Eimori ◽

Yasuo Nara

Keyword(s):

High Temperature ◽

Metal Oxide ◽

Interfacial Reaction ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Temperature Annealing ◽

Gate Stack

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L$_{\mathrm {g}} = 80$ -nm Trigate Quantum-Well In0.53Ga0.47As Metal–Oxide–Semiconductor Field-Effect Transistors With Al2O3/HfO2 Gate-Stack

IEEE Electron Device Letters ◽

10.1109/led.2015.2393554 ◽

2015 ◽

Vol 36 (3) ◽

pp. 223-225 ◽

Cited By ~ 24

Author(s):

Tae-Woo Kim ◽

Dong-Hyi Koh ◽

Chan-Soo Shin ◽

Won-Kyu Park ◽

Tommaso Orzali ◽

...

Keyword(s):

Quantum Well ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Stack

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Anomalous negative bias temperature instability behavior in p-channel metal-oxide-semiconductor field-effect transistors with HfSiON∕SiO2 gate stack

Applied Physics Letters ◽

10.1063/1.2745649 ◽

2007 ◽

Vol 90 (23) ◽

pp. 233505

Author(s):

Shih-Chang Chen ◽

Chao-Hsin Chien ◽

Jen-Chung Lou

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Gate Stack ◽

Temperature Instability ◽

Bias Temperature Instability

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On the dc and noise properties of the gate current in epitaxial Ge p-channel metal oxide semiconductor field effect transistors with TiN∕TaN∕HfO2∕SiO2 gate stack

Applied Physics Letters ◽

10.1063/1.2916821 ◽

2008 ◽

Vol 92 (16) ◽

pp. 163508 ◽

Cited By ~ 15

Author(s):

Debabrata Maji ◽

Felice Crupi ◽

Gino Giusi ◽

Calogero Pace ◽

Eddy Simoen ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Stack ◽

Gate Current

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Schottky source/drain germanium-based metal-oxide-semiconductor field-effect transistors with self-aligned NiGe/Ge junction and aggressively scaled high-k gate stack

Applied Physics Letters ◽

10.1063/1.4938397 ◽

2015 ◽

Vol 107 (25) ◽

pp. 252104 ◽

Cited By ~ 3

Author(s):

Takuji Hosoi ◽

Yuya Minoura ◽

Ryohei Asahara ◽

Hiroshi Oka ◽

Takayoshi Shimura ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Stack ◽

High K

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Characteristics of a band edge p-channel metal-oxide-semiconductor field effect transistors fabricated with a high-k /WAlx/TiSiN gate stack

Applied Physics Letters ◽

10.1063/1.3464167 ◽

2010 ◽

Vol 97 (2) ◽

pp. 023501 ◽

Cited By ~ 2

Author(s):

Chang Seo Park ◽

Muhamad M. Hussain ◽

Gennadi Bersuker ◽

Paul D. Kirsch ◽

Raj Jammy

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Band Edge ◽

Gate Stack ◽

High K

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Investigation and Integration of Polycrystalline Silicon/TiN/SiON Gate Stack in Silicon on Thin Buried Oxide Complementary Metal Oxide Semiconductor Field Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.076504 ◽

2012 ◽

Vol 51 ◽

pp. 076504

Author(s):

Takashi Ishigaki ◽

Ryuta Tsuchiya ◽

Yusuke Morita ◽

Nobuyuki Sugii ◽

Shinichiro Kimura ◽

...

Keyword(s):

Metal Oxide ◽

Polycrystalline Silicon ◽

Field Effect ◽

Field Effect Transistors ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Stack ◽

Buried Oxide

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