Interfacial Reaction of TiN/HfSiON Gate Stack in High-Temperature Annealing for Gate-First Metal–Oxide–Semiconductor Field-Effect Transistors

2007 ◽  
Vol 46 (4B) ◽  
pp. 1921-1928 ◽  
Author(s):  
Takeo Matsuki ◽  
Seiji Inumiya ◽  
Nobuyuki Mise ◽  
Takahisa Eimori ◽  
Yasuo Nara
Keyword(s):  
High Temperature ◽  
Metal Oxide ◽  
Interfacial Reaction ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
High Temperature Annealing ◽  
Gate Stack

High-temperature modeling and characterization of 6H silicon carbide metal-oxide-semiconductor field-effect transistors

2005 ◽  
Vol 97 (4) ◽  
pp. 046106 ◽  
Author(s):  
Stephen K. Powell ◽  
Neil Goldsman ◽  
Aivars Lelis ◽  
James M. McGarrity ◽  
Flynn B. McLean
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Temperature Modeling

scholarly journals Ge0.83Sn0.17 p-channel metal-oxide-semiconductor field-effect transistors: Impact of sulfur passivation on gate stack quality

2016 ◽  
Vol 119 (2) ◽  
pp. 024502 ◽  
Author(s):  
Dian Lei ◽  
Wei Wang ◽  
Zheng Zhang ◽  
Jisheng Pan ◽  
Xiao Gong ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Gate Stack ◽  
Sulfur Passivation

L$_{\mathrm {g}} = 80$ -nm Trigate Quantum-Well In0.53Ga0.47As Metal–Oxide–Semiconductor Field-Effect Transistors With Al2O3/HfO2 Gate-Stack

2015 ◽  
Vol 36 (3) ◽  
pp. 223-225 ◽  
Author(s):  
Tae-Woo Kim ◽  
Dong-Hyi Koh ◽  
Chan-Soo Shin ◽  
Won-Kyu Park ◽  
Tommaso Orzali ◽  
...  
Keyword(s):  
Quantum Well ◽  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Gate Stack
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