Effect of oxygen stoichiometry on the insulator-metal phase transition in vanadium oxide thin films studied using optical pump-terahertz probe spectroscopy

2013 ◽  
Vol 103 (15) ◽  
pp. 151908 ◽  
Author(s):  
H. W. Liu ◽  
L. M. Wong ◽  
S. J. Wang ◽  
S. H. Tang ◽  
X. H. Zhang
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Vanadium Oxide ◽  
Metal Phase ◽  
Oxygen Stoichiometry ◽  
Optical Pump ◽  
Metal Phase Transition ◽  
Effect Of Oxygen ◽  
Vanadium Oxide Thin Films ◽  
Probe Spectroscopy

Influence of light on the antiferromagnetic-insulator—ferromagnetic-metal phase transition in Pr0.6La0.1Ca0.3MnO3 thin films

2004 ◽  
Vol 30 (12) ◽  
pp. 948-955 ◽  
Author(s):  
P. Aleshkevych ◽  
M. Baran ◽  
R. Szymczak ◽  
H. Szymczak ◽  
V. A. Bedarev ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Ferromagnetic Metal ◽  
Metal Phase ◽  
Metal Phase Transition

scholarly journals Reversible and repeatable phase transition at a negative temperature regime for doped and co-doped spin coated mixed valence vanadium oxide thin films

RSC Advances ◽  
2018 ◽  
Vol 8 (54) ◽  
pp. 30966-30977 ◽  
Author(s):  
Dipta Mukherjee ◽  
Arjun Dey ◽  
A. Carmel Mary Esther ◽  
N. Sridhara ◽  
D. Raghavendra Kumar ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Vanadium Oxide ◽  
Temperature Regime ◽  
Spin Coating ◽  
Mixed Valence ◽  
Negative Temperature ◽  
Coating Technique ◽  
Vanadium Oxide Thin Films ◽  
Co Doped

Smooth, uniform mixed valance vanadium oxide (VO) thin films are grown on flexible, transparent Kapton and opaque Al6061 substrates by the spin coating technique at a constant rpm of 3000.

scholarly journals Механизм фазового перехода полупроводник-металл в тонких пленках состава Sm-=SUB=-1-x-=/SUB=- Gd-=SUB=-x-=/SUB=-S

2018 ◽  
Vol 52 (1) ◽  
pp. 45
Author(s):  
В.В. Каминский ◽  
С.М. Соловьев ◽  
Г.Д. Хавров ◽  
Н.В. Шаренкова
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Physical Mechanism ◽  
Basic Factor ◽  
Metal Phase ◽  
Film Material ◽  
Flash Evaporation ◽  
Metal Phase Transition ◽  
Semiconductor Properties

AbstractThe influence of the Gd content on the semiconductor–metal phase transition in polycrystalline Sm_1– x Gd_ x S thin films produced by the flash evaporation of a powder in vacuum is studied. It is shown that the basic factor of the physical mechanism of the phase transition is compression of the film material. It is established that the films retain their semiconductor properties only up to a Gd content of x = 0.12.

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