Charge transport properties of p-CdTe/n-CdTe/n+-Si diode-type nuclear radiation detectors based on metalorganic vapor-phase epitaxy-grown epilayers

2013 ◽  
Vol 114 (16) ◽  
pp. 164510 ◽  
Author(s):  
M. Niraula ◽  
K. Yasuda ◽  
Y. Wajima ◽  
H. Yamashita ◽  
Y. Tsukamoto ◽  
...  
Keyword(s):  
Charge Transport ◽  
Transport Properties ◽  
Vapor Phase ◽  
Radiation Detectors ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Nuclear Radiation ◽  
Nuclear Radiation Detectors

Publisher’s Note: “Influence of growth rate on charge transport in GaSb homojunctions prepared by metalorganic vapor phase epitaxy” [J. Appl. Phys. 95, 1811 (2004)]

2004 ◽  
Vol 95 (10) ◽  
pp. 5935-5935
Author(s):  
Dobroslav Kindl ◽  
Jana Toušková ◽  
Eduard Hulicius ◽  
Jiřı́ Pangrác ◽  
Tomislav Šimeček ◽  
...  
Keyword(s):  
Growth Rate ◽  
Charge Transport ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy

Electron Transport Properties in Lightly Si-doped InGaN Films Grown by Metalorganic Vapor Phase Epitaxy

2004 ◽  
Vol 43 (6A) ◽  
pp. 3356-3359 ◽  
Author(s):  
Chengxin Wang ◽  
Narihiko Maeda ◽  
Kotaro Tsubaki ◽  
Naoki Kobayashi ◽  
Toshiki Makimoto
Keyword(s):  
Electron Transport ◽  
Transport Properties ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Electron Transport Properties ◽  
Si Doped

Influence of growth rate on charge transport in GaSb homojunctions prepared by metalorganic vapor phase epitaxy

2004 ◽  
Vol 95 (4) ◽  
pp. 1811-1815 ◽  
Author(s):  
Dobroslav Kindl ◽  
Jana Toušková ◽  
Eduard Hulicius ◽  
Jiřı́ Pangrác ◽  
Tomislav Šimeček ◽  
...  
Keyword(s):  
Growth Rate ◽  
Charge Transport ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy
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