Publisher’s Note: “Influence of growth rate on charge transport in GaSb homojunctions prepared by metalorganic vapor phase epitaxy” [J. Appl. Phys. 95, 1811 (2004)]

2004 ◽  
Vol 95 (10) ◽  
pp. 5935-5935
Author(s):  
Dobroslav Kindl ◽  
Jana Toušková ◽  
Eduard Hulicius ◽  
Jiřı́ Pangrác ◽  
Tomislav Šimeček ◽  
...  
Keyword(s):  
Growth Rate ◽  
Charge Transport ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy

Influence of growth rate on charge transport in GaSb homojunctions prepared by metalorganic vapor phase epitaxy

2004 ◽  
Vol 95 (4) ◽  
pp. 1811-1815 ◽  
Author(s):  
Dobroslav Kindl ◽  
Jana Toušková ◽  
Eduard Hulicius ◽  
Jiřı́ Pangrác ◽  
Tomislav Šimeček ◽  
...  
Keyword(s):  
Growth Rate ◽  
Charge Transport ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy

The dependence of growth rate of GaN buffer layer on growth parameters by metalorganic vapor-phase epitaxy

1998 ◽  
Vol 193 (1-2) ◽  
pp. 23-27 ◽  
Author(s):  
Xianglin Liu ◽  
Da-Cheng Lu ◽  
Lianshan Wang ◽  
Xiaohui Wang ◽  
Du Wang ◽  
...  
Keyword(s):  
Growth Rate ◽  
Buffer Layer ◽  
Vapor Phase ◽  
Growth Parameters ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Gan Buffer Layer
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