Multifunctional molybdenum disulfide flash memory using a PEDOT:PSS floating gate

Two-dimensional transition metal dichalcogenide materials (TMDs), such as molybdenum disulfide (MoS2), have been considered promising candidates for future electronic applications owing to their electrical, mechanical, and optical properties. Here, we present a new concept for multifunctional MoS2 flash memory by combining a MoS2 channel with a PEDOT:PSS floating layer. The proposed MoS2 memory devices exhibit a switching ratio as high as 2.3 × 107, a large memory window (54.6 ± 7.80 V), and high endurance (>1,000 cycles). As the PEDOT:PSS film enables a low-temperature solution-coating process and mechanical flexibility, the proposed P-memory can be embedded on a polyimide substrate over a rigid silicon substrate, offering high mechanical endurance (over 1,000 cycle bending test). Furthermore, both MoS2 and PEDOT:PSS have a bandgap that is desirable in optoelectronic memory operation, where charge carriers are stored differently in the floating gate depending on light illumination. As a new application that combines photodiodes and memory functions, we demonstrate multilevel memory programming based on light intensity and color.

The multilevel memory–reward coactivation framework of nostalgia: a literature review

Nostalgia, a sentimental longing for the past, has attracted attention in the fields of psychology and marketing in recent years. Although these studies have identified what nostalgia is, including its triggers and functions, the question of how nostalgia is induced remains unanswered. In this article, we review existing psychological models and recent neuroimaging studies that have investigated the neural correlates of nostalgia and propose a provisional framework of nostalgia induction. The multilevel memory‒reward coactivation framework expects that different types of autobiographical memory (AM), such as episodic AM and semantic AM, activate the associated mesolimbic reward system. This framework also assumes a working self, a complex set of active goals and associated self-images, which enables us to explain individual differences in nostalgia experience by influencing what is remembered and how the retrieved information is evaluated. This framework is advantageous in that it can integrate existing psychological models into one model and can explain individual differences in nostalgia that are important for the use of nostalgia, especially in clinical situations.

Nonvolatile Ternary Resistive Memory Performance of a Benzothiadiazole-Based Donor–Acceptor Material on ITO-Coated Glass

The explosive growth of data and information has increasingly motivated scientific and technological endeavors toward ultra-high-density data storage (UHDDS) applications. Herein, a donor−acceptor (D–A) type small conjugated molecule containing benzothiadiazole (BT) is prepared (NIBTCN), which demonstrates multilevel resistive memory behavior and holds considerable promise for implementing the target of UHDDS. The as-prepared device presents distinct current ratios of 105.2/103.2/1, low threshold voltages of −1.90 V and −3.85 V, and satisfactory reproducibility beyond 60%, which suggests reliable device performance. This work represents a favorable step toward further development of highly-efficient D−A molecular systems, which opens more opportunities for achieving high performance multilevel memory materials and devices.

Non-volatile ternary memristor based on a polymer containing carbazole donor with CuO NPs embedded

With the rapid development of information technology, binary memory may not meet the requirements of future information and communication technology, hence multilevel memory is widely studied. Herein, a donor-acceptor-type polymer...