Computational studies on nitrogen (N)-substituted 2,6-diphenylanthracene: a novel precursor of organic field effect transistor materials

The investigation shows that nitrogen (N)-substituted π-conjugated semiconductor materials have improved optical and electronic performance and work efficiently in organic field-effect transistors (OFETs).

Advances in thermoelectric (GeTe) x (AgSbTe2)100-x

The (GeTe) x (AgSbTe2)100-x alloys, also called TAGS-x in short, have long been demonstrated as a promising candidate for thermoelectric applications with successful services as the p-type leg in radioisotope thermoelectric generators for space missions. This largely stems from the complex band structure for a superior electronic performance and strong anharmonicity for a low lattice thermal conductivity. Utilization of the proven strategies including carrier concentration optimization, band and defects engineering, an extraordinary thermoelectric figure of merit, zT, has been achieved in TAGS-based alloys. Here, crystal structure, band structure, microstructure, synthesis techniques and thermoelectric transport properties of TAGS-based alloys, as well as successful strategies for manipulating the thermoelectric performance, are surveyed with opportunities for further advancements. These strategies involved are believed to be in principle applicable for advancing many other thermoelectrics.

OLED from solution-processed crystalline poly(triazine imide)

Crystalline semiconducting carbon nitrides are chemically and physically resilient, consist of earth abundant elements, and can be exfoliated into 2D atomically thin layers. In particular, poly(triazine imide) (PTI) is a highly crystalline semiconductor, and though no techniques exist to date that enable synthesis of macroscopic monolayers of PTI, it is possible to study it in thin layer device applications that are compatible with its polycrystalline, nanoscale morphology. In our study, we find that the by-product of conventional PTI synthesis is a C-C carbon rich phase that is detrimental for charge transport and photoluminescence. An optimised synthetic protocol yields a PTI material with an increased quantum yield, enabled photocurrent and electroluminescence. In addition, we report that protonation of the PTI structure happens preferentially at the pyridinic nitrogen atoms of the triazine (C3N3) rings, is accompanied by exfoliation of PTI layers, and contributes to increases in quantum yield and exciton lifetimes. This study describes structure-property relationships in PTI that link (i) the nature of defects, their formation, and how to avoid them with (ii) the optical and electronic performance of PTI. On the basis of our findings, we create an OLED prototype with PTI as the active, metal-free material, and we lay the foundations for device integration of solution-processable graphitic carbon nitride dispersions in semiconductor devices.

The Mediating Role of Electronic Performance Monitoring in the relationship between Personality Traits and Work Passion

This study aims to study the relationship between personality traits (conscientiousness and extraversion), electronic performance monitoring (EPM) and work passion. In addition, it investigates the mediating role of EPM between personality traits and work passion. Data was collected from 105 employees working in call centers throughout Pakistan. Partial least squares structural equation modeling (PLS-SEM), using SmartPLS 3.0, was performed to test the hypothesized model. The results showed that consciousness and extraversion have a positive impact on EPM and work passion. In addition, EPM acts significantly as a mediator between personality traits and work passion among call center employees. This is the first study that examines the mediating role of EPM in the relation between personality differences and work passion. The results of the study would help Asian human resources professionals effectively perform human resources functions, such as employee staffing, training, and performance management. Implications for managers and recommendations for future studies are proposed.

Electronic performance of GaN nanowires cathode under electric field

The built-in electric field of exponential doping can promote the concentration of the photogenerated carrier center to the top surface of the nanowire. The external electric field also can bend the motion trajectory of the emitted electrons toward the collecting side. These field-assisted methods promote the quantum efficiency. In this paper, the emission theory of a single GaN nanowire photocathode is studied for the first time. The effects of height and width of the nanowire, wavelength, intensity of electric field on quantum efficiency of uniformly doped or exponentially doped GaN nanowire photocathodes were explored. It shows that the top of the exponentially doped cathode has a higher quantum efficiency than uniformly doped cathode. With the absence of the field, quantum efficiency of a uniformly doped cathode reaches a maximum value of 55.29% when the width is 150 nm and the wavelength is 220 nm. The form of exponentially doped cathode can generate an internal field. With the internal field, a maximum value rises 56.73% when the height is 900 nm and the wavelength is 230 nm. The theoretical results can direct the preparation of this kind of photocathode.