Synchrotron radiation photoemission study of interfacial electronic structure of HfO2 on In0.53Ga0.47As(001)-4 × 2 from atomic layer deposition
2011 ◽
Vol 88
(7)
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pp. 1101-1104
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2011 ◽
Vol 11
(5)
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pp. 4328-4332
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2015 ◽
Vol 357
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pp. 2255-2259
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