Electronic structure investigation of atomic layer deposition ruthenium(oxide) thin films using photoemission spectroscopy

2015 ◽  
Vol 118 (6) ◽  
pp. 065306 ◽  
Author(s):  
Michael Schaefer ◽  
Rudy Schlaf
2014 ◽  
Vol 26 (24) ◽  
pp. 7083-7090 ◽  
Author(s):  
Hyo Jun Jung ◽  
Jeong Hwan Han ◽  
Eun Ae Jung ◽  
Bo Keun Park ◽  
Jin-Ha Hwang ◽  
...  

2014 ◽  
Vol 610 ◽  
pp. 529-539 ◽  
Author(s):  
Ji-Yoon Park ◽  
Seungmin Yeo ◽  
Taehoon Cheon ◽  
Soo-Hyun Kim ◽  
Min-Kyu Kim ◽  
...  

CrystEngComm ◽  
2021 ◽  
Author(s):  
Pengmei Yu ◽  
Sebastian M. J. Beer ◽  
Anjana Devi ◽  
Mariona Coll

The growth of complex oxide thin films with atomic precision offers bright prospects to study improved properties and novel functionalities.


2014 ◽  
Vol 20 (7-8-9) ◽  
pp. 217-223 ◽  
Author(s):  
Timothee Blanquart ◽  
Mikko Kaipio ◽  
Jaakko Niinistö ◽  
Marco Gavagnin ◽  
Valentino Longo ◽  
...  

2005 ◽  
Vol 15 (4) ◽  
pp. 275-280
Author(s):  
Hie-Chul Kim ◽  
Min-Wan Kim ◽  
Hyung-Su Kim ◽  
Hyug-Jong Kim ◽  
Woo-Keun Sohn ◽  
...  

RSC Advances ◽  
2018 ◽  
Vol 8 (60) ◽  
pp. 34215-34223
Author(s):  
So-Yeong Na ◽  
Sung-Min Yoon

Oxide thin films transistors (TFTs) with Hf and Al co-incorporated ZnO active channels prepared by atomic-layer deposition are presented.


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