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Random telegraph noise analysis in AlOx/WOy resistive switching memories
Applied Physics Letters
◽
10.1063/1.4868383
◽
2014
◽
Vol 104
(10)
◽
pp. 103507
◽
Cited By ~ 10
Author(s):
Ye Zhang
◽
Huaqiang Wu
◽
Minghao Wu
◽
Ning Deng
◽
Zhiping Yu
◽
...
Keyword(s):
Resistive Switching
◽
Noise Analysis
◽
Random Telegraph Noise
◽
Telegraph Noise
Download Full-text
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References
Random telegraph noise analysis in redox-based resistive switching devices using KMC simulations
2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
◽
10.23919/sispad.2017.8085327
◽
2017
◽
Cited By ~ 1
Author(s):
Elhameh Abbaspour
◽
Stephan Menzel
◽
Christoph Jungemann
Keyword(s):
Resistive Switching
◽
Noise Analysis
◽
Random Telegraph Noise
◽
Telegraph Noise
◽
Switching Devices
Download Full-text
Random Telegraph Noise analysis as a tool to link physical device features to electrical reliability in nanoscale devices
2016 IEEE International Integrated Reliability Workshop (IIRW)
◽
10.1109/iirw.2016.7904891
◽
2016
◽
Cited By ~ 5
Author(s):
Francesco Maria Puglisi
Keyword(s):
Noise Analysis
◽
Nanoscale Devices
◽
Random Telegraph Noise
◽
Telegraph Noise
◽
Electrical Reliability
Download Full-text
Investigation of trap properties in high-k/metal gate p-type metal-oxide-semiconductor field-effect-transistors with aluminum ion implantation using random telegraph noise analysis
Applied Physics Letters
◽
10.1063/1.4893445
◽
2014
◽
Vol 105
(6)
◽
pp. 062109
Author(s):
Tsung-Hsien Kao
◽
Shoou-Jinn Chang
◽
Yean-Kuen Fang
◽
Po-Chin Huang
◽
Chien-Ming Lai
◽
...
Keyword(s):
Field Effect
◽
Field Effect Transistors
◽
Noise Analysis
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Metal Gate
◽
Random Telegraph Noise
◽
High K
◽
Telegraph Noise
◽
P Type
Download Full-text
Multi-level resistance switching and random telegraph noise analysis of nitride based memristors
Chaos Solitons & Fractals
◽
10.1016/j.chaos.2021.111533
◽
2021
◽
Vol 153
◽
pp. 111533
Author(s):
Nikolaos Vasileiadis
◽
Panagiotis Loukas
◽
Panagiotis Karakolis
◽
Vassilios Ioannou-Sougleridis
◽
Pascal Normand
◽
...
Keyword(s):
Noise Analysis
◽
Resistance Switching
◽
Random Telegraph Noise
◽
Telegraph Noise
◽
Multi Level
◽
Level Resistance
Download Full-text
Resistive Switching Devices Producing Giant Random Telegraph Noise
IEEE Electron Device Letters
◽
10.1109/led.2021.3131863
◽
2021
◽
pp. 1-1
Author(s):
Thales Becker
◽
Xuehua Li
◽
Eduardo Moser
◽
Pedro Alves
◽
Gilson Wirth
◽
...
Keyword(s):
Resistive Switching
◽
Random Telegraph Noise
◽
Telegraph Noise
◽
Switching Devices
Download Full-text
Understanding defect kinetics in ultra-thin dielectric logic and memory devices using random telegraph noise analysis
2015 IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits
◽
10.1109/ipfa.2015.7224354
◽
2015
◽
Author(s):
N. Raghavan
◽
W. H. Liu
◽
R. Thamankar
◽
M. Bosman
◽
K. L. Pey
Keyword(s):
Noise Analysis
◽
Memory Devices
◽
Random Telegraph Noise
◽
Telegraph Noise
Download Full-text
Statistical Fluctuations in HfOx Resistive-Switching Memory: Part II—Random Telegraph Noise
IEEE Transactions on Electron Devices
◽
10.1109/ted.2014.2330202
◽
2014
◽
Vol 61
(8)
◽
pp. 2920-2927
◽
Cited By ~ 68
Author(s):
Stefano Ambrogio
◽
Simone Balatti
◽
Antonio Cubeta
◽
Alessandro Calderoni
◽
Nirmal Ramaswamy
◽
...
Keyword(s):
Resistive Switching
◽
Random Telegraph Noise
◽
Resistive Switching Memory
◽
Statistical Fluctuations
◽
Telegraph Noise
◽
Switching Memory
Download Full-text
Classification of Three-Level Random Telegraph Noise and Its Application in Accurate Extraction of Trap Profiles in Oxide-Based Resistive Switching Memory
IEEE Electron Device Letters
◽
10.1109/led.2018.2858245
◽
2018
◽
Vol 39
(9)
◽
pp. 1302-1305
◽
Cited By ~ 1
Author(s):
Tiancheng Gong
◽
Qing Luo
◽
Xiaoxin Xu
◽
Jie Yu
◽
Danian Dong
◽
...
Keyword(s):
Resistive Switching
◽
Random Telegraph Noise
◽
Resistive Switching Memory
◽
Telegraph Noise
◽
Switching Memory
Download Full-text
Investigation of Trap Properties in High-k/Metal Gate p-Type Metal–Oxide–Semiconductor Field-Effect Transistors with SiGe Source/Drain Using Random Telegraph Noise Analysis
Applied Physics Express
◽
10.7567/apex.6.084201
◽
2013
◽
Vol 6
(8)
◽
pp. 084201
Author(s):
San-Lein Wu
◽
Kai-Shiang Tsai
◽
Osbert Cheng
Keyword(s):
Field Effect
◽
Field Effect Transistors
◽
Noise Analysis
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Metal Gate
◽
Random Telegraph Noise
◽
High K
◽
Telegraph Noise
◽
P Type
Download Full-text
Random telegraph noise analysis in time domain
Review of Scientific Instruments
◽
10.1063/1.1150519
◽
2000
◽
Vol 71
(4)
◽
pp. 1681-1688
◽
Cited By ~ 61
Author(s):
Y. Yuzhelevski
◽
M. Yuzhelevski
◽
G. Jung
Keyword(s):
Time Domain
◽
Noise Analysis
◽
Random Telegraph Noise
◽
Telegraph Noise
Download Full-text
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