Multi-scale quantum point contact model for filamentary conduction in resistive random access memories devices

2014 ◽  
Vol 115 (24) ◽  
pp. 244507 ◽  
Author(s):  
Xiaojuan Lian ◽  
Xavier Cartoixà ◽  
Enrique Miranda ◽  
Luca Perniola ◽  
Riccardo Rurali ◽  
...  
2018 ◽  
Vol 123 (1) ◽  
pp. 014501 ◽  
Author(s):  
J. B. Roldán ◽  
E. Miranda ◽  
G. González-Cordero ◽  
P. García-Fernández ◽  
R. Romero-Zaliz ◽  
...  

2019 ◽  
Vol 1 (9) ◽  
pp. 3753-3760 ◽  
Author(s):  
Zuheng Wu ◽  
Xiaolong Zhao ◽  
Yang Yang ◽  
Wei Wang ◽  
Xumeng Zhang ◽  
...  

The use of a graphene interface as the cation barrier in Ag-based resistive random access memory devices can effectively change the volatile threshold selector behavior into nonvolatile memory switching.


2020 ◽  
Vol 29 (3) ◽  
pp. 030302
Author(s):  
Qian Du ◽  
Kang Lan ◽  
Yan-Hui Zhang ◽  
Lu-Jing Jiang

2002 ◽  
Vol 81 (9) ◽  
pp. 1699-1701 ◽  
Author(s):  
A. N. Cleland ◽  
J. S. Aldridge ◽  
D. C. Driscoll ◽  
A. C. Gossard

2014 ◽  
Vol 104 (20) ◽  
pp. 203102 ◽  
Author(s):  
A. A. Shevyrin ◽  
A. G. Pogosov ◽  
M. V. Budantsev ◽  
A. K. Bakarov ◽  
A. I. Toropov ◽  
...  

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