Embeded photonic crystal at the interface of p-GaN and Ag reflector to improve light extraction of GaN-based flip-chip light-emitting diode

2014 ◽  
Vol 105 (25) ◽  
pp. 251103 ◽  
Author(s):  
Aigong Zhen ◽  
Ping Ma ◽  
Yonghui Zhang ◽  
Enqing Guo ◽  
Yingdong Tian ◽  
...  
Keyword(s):  
Photonic Crystal ◽  
Flip Chip ◽  
Light Emitting Diode ◽  
Light Extraction ◽  
Light Emitting ◽  
Ag Reflector

scholarly journals Study on Modulation Bandwidth and Light Extraction Efficiency of Flip-Chip Light-Emitting Diode with Photonic Crystals

Micromachines ◽  
2019 ◽  
Vol 10 (11) ◽  
pp. 767 ◽  
Author(s):  
Hong Wang ◽  
Ming Zhong ◽  
Lijun Tan ◽  
Wei Shi ◽  
Quanbin Zhou
Keyword(s):  
Photonic Crystal ◽  
Photonic Crystals ◽  
Flip Chip ◽  
Extraction Efficiency ◽  
Light Extraction ◽  
Light Extraction Efficiency ◽  
Experimental Result ◽  
Modulation Bandwidth ◽  
Light Emitting ◽  
Current Densities

In this study, the photonic crystal structure is employed to increase both the light extraction efficiency and the modulation bandwidth of flip-chip GaN-based light-emitting diodes (LEDs). The finite difference time domain method is utilized to investigate the influence of structure of photonic crystals on the Purcell factor and light extraction efficiency of flip-chip GaN-based LEDs. Simulation results show that the modulation bandwidth is estimated to be 202 MHz at current densities of 1000 A/cm2. The experimental result of modulation bandwidth is in accord with the simulation. The optical f-3dB of the device achieves 212 MHz at current densities of 1000 A/cm2 and up to 285 MHz at current densities of 2000 A/cm2. This design of photonic crystal flip-chip LED has the potential for applications in high-frequency visible light communication.

Enhanced light extraction from GaN-based green light-emitting diode with photonic crystal

2007 ◽  
Vol 91 (18) ◽  
pp. 181109 ◽  
Author(s):  
Ja-Yeon Kim ◽  
Min-Ki Kwon ◽  
Ki-Sung Lee ◽  
Seong-Ju Park ◽  
Sang Hoon Kim ◽  
...  
Keyword(s):  
Photonic Crystal ◽  
Light Emitting Diode ◽  
Green Light ◽  
Light Extraction ◽  
Light Emitting

Enhanced Light Extraction of GaN Based Blue Light-Emitting Diode with SiO2/ITO Photonic Crystal Structure

2012 ◽  
Vol 2 (1) ◽  
pp. P13-P15 ◽  
Author(s):  
Min-Ki Kwon ◽  
Ja-Yeon Kim ◽  
Ki Seok Kim ◽  
Gun-Young Jung ◽  
Wantea Lim ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Photonic Crystal ◽  
Blue Light ◽  
Light Emitting Diode ◽  
Light Extraction ◽  
Photonic Crystal Structure ◽  
Light Emitting

scholarly journals Efficiency and Droop Improvement in GaN-Based High-Voltage Flip Chip LEDs

2014 ◽  
Vol 2014 ◽  
pp. 1-7 ◽  
Author(s):  
Yen-Chih Chiang ◽  
Bing-Cheng Lin ◽  
Kuo-Ju Chen ◽  
Sheng-Huan Chiu ◽  
Chien-Chung Lin ◽  
...  
Keyword(s):  
High Voltage ◽  
Flip Chip ◽  
Light Emitting Diode ◽  
Bragg Reflector ◽  
Light Extraction ◽  
Efficiency Enhancement ◽  
Distributed Bragg Reflector ◽  
Light Emitting ◽  
Current Voltage ◽  
Current Voltage Characteristics

The GaN-based high-voltage flip chip light-emitting diode (HVFC-LED) is designed and developed for the purpose of efficiency enhancement. In our design, the distributed Bragg reflector (DBR) is deposited at the bonded substrate to increase the light extraction. After the flip chip process, the general current-voltage characteristics between the flip chip sample and the traditional sample are essentially the same. With the help of great thermal conductive silicon substrate and the bottom DBR, the HVFC-LED is able to enhance the power by 37.1% when compared to the traditional high-voltage LEDs. The wall-plug efficiencies of the HVFC-LED also show good droop reduction as high as 9.9% compared to the traditional devices.

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