scholarly journals Investigations on Ni-Co-Mn-Sn thin films: Effect of substrate temperature and Ar gas pressure on the martensitic transformations and exchange bias properties

AIP Advances ◽  
2015 ◽  
Vol 5 (3) ◽  
pp. 037108 ◽  
Author(s):  
Ramudu Machavarapu ◽  
Gerhard Jakob
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Exchange Bias ◽  
Martensitic Transformations ◽  
Gas Pressure ◽  
Ar Gas

scholarly journals Effect of Ar Gas Pressure on Mechanical Properties of Sputtered Ti Thin Films

2005 ◽  
Vol 125 (7) ◽  
pp. 313-318 ◽  
Author(s):  
Hirofumi Ogawa ◽  
Shinji Kaneko ◽  
Kiyoteru Suzuki ◽  
Ryutaro Maeda
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Gas Pressure ◽  
Ar Gas

Effects of sputtering Ar gas pressure in the exchange stiffness constant of Co40Fe40B20 thin films

2013 ◽  
Vol 339 ◽  
pp. 36-39 ◽  
Author(s):  
Jaehun Cho ◽  
Jinyong Jung ◽  
Ka-Eon Kim ◽  
Sang-Il Kim ◽  
Seung-Young Park ◽  
...  
Keyword(s):  
Thin Films ◽  
Gas Pressure ◽  
Stiffness Constant ◽  
Ar Gas

1Effects of sputter power, gas pressure and substrate temperature on the structure and optical properties of CdS thin films

2010 ◽  
Author(s):  
Weiming Gong ◽  
Run Xu ◽  
Jian Huang ◽  
Minyan Tang ◽  
Lin-jun Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Substrate Temperature ◽  
Gas Pressure ◽  
Cds Thin Films

Orientation Characteristics with Process Parameters of PLZT(X/70/100) Thin Films Prepared by RF-Magnetron Sputtering

1997 ◽  
Vol 472 ◽  
Author(s):  
S.K. Kang ◽  
M.S. Park ◽  
D.B. Kim ◽  
K.S. No ◽  
S.H. Cho
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Process Parameters ◽  
Surface Characterization ◽  
Rf Magnetron Sputtering ◽  
Gas Pressure ◽  
Axis Orientation ◽  
X Ray ◽  
Dominant Influence

ABSTRACTPLZT(X/70/100) thin films on MgO(100), Pt/Ti/MgO(100), and Pt/Ti/Si(100) have been prepared by RF-magnetron sputtering process from sintered target with compositions of PLZT(X/70/100), where X=5, 10, and 15, respectively. The effects of substrate temperature, substrate and gas pressure on deposited thin films were studied. Crystalline and surface characterization was analyzed using XRD, SEM, AES, and AFM. X-ray rocking curves were measured to examine the film orientation. It was observed that the gas pressure was the dominant influence on having (001) preferred orientation. As a result, the degree of c-axis orientation increased as gas pressure decreased.

scholarly journals Influences of Ar-Gas Pressure on Magnetostriction of Sm-Fe Alloy Thin Films by DC-Magnetron Sputtering Process

2005 ◽  
Vol 69 (4) ◽  
pp. 373-376 ◽  
Author(s):  
Atsushi Kadowaki ◽  
Keisuke Takahashi ◽  
Yoshihito Matsumura ◽  
Yoshitake Nishi
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Gas Pressure ◽  
Dc Magnetron Sputtering ◽  
Ar Gas

As‐Grown Superconductivity of Bi‐System Thin Films Prepared by Magnetron Sputtering with Three Pb Doped Targets: (Bi 1.6 Pb0.4) 1 + a (SrCa)2 Cu3 O x, (Bi 1.6 Pb0.4) 1 (SrCa)2+c Cu3 Ox and (Bi 1.6 Pb0.4) 1 (SrCa)2Cu3+cOx (a = 0.5, b= 1,c= 1.5)

1989 ◽  
Vol 169 ◽  
Author(s):  
Ken'ichi Kuroda ◽  
Masami Tanioku ◽  
Kazuyoshi Kojima ◽  
Koichi Hamanaka
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Rf Magnetron Sputtering ◽  
Gas Pressure ◽  
Substrate Temperatures

AbstractSuperconducting Bi system thin films have been formed on MgO(100) substrates by RF magnetron sputtering from three Pb‐doped targets: Bi2.4 Pb0.6 Sr2 Ca2 CU3 O x ,Bi 1.6 Pb0.4 Sr3 Ca3 CU3 O x and Bi 1.6 Pb 0.4 Sr2 Ca2 CU4.5 O x. The as‐grown films formed at substrate temperatures above 600 °C showed superconductivity, though, they did not contain Pb. The film, formed at 660°C and kept at the same substrate temperature and gas pressure as the sputtering conditions for 5 h after deposition, showed a resistivity drop at 115 K and zero resistivity at 83 K. The Jc value of the film was 4x105 A/cm2 at 77 K and 3x107 A/cm 2 at 20 K.

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