scholarly journals Intrinsic synchronization of an array of spin-torque oscillators driven by the spin-Hall effect

2015 ◽  
Vol 117 (17) ◽  
pp. 17E504 ◽  
Author(s):  
G. Siracusano ◽  
R. Tomasello ◽  
V. Puliafito ◽  
A. Giordano ◽  
B. Azzerboni ◽  
...  
Keyword(s):  
Hall Effect ◽  
Spin Hall Effect ◽  
Spin Torque ◽  
Spin Torque Oscillators

scholarly journals Spin-Torque Switching with the Giant Spin Hall Effect of Tantalum

Science ◽  
2012 ◽  
Vol 336 (6081) ◽  
pp. 555-558 ◽  
Author(s):  
L. Liu ◽  
C.-F. Pai ◽  
Y. Li ◽  
H. W. Tseng ◽  
D. C. Ralph ◽  
...  
Keyword(s):  
Hall Effect ◽  
Spin Hall Effect ◽  
Spin Torque

scholarly journals Spin-torque switching of a nano-magnet using giant spin hall effect

AIP Advances ◽  
2015 ◽  
Vol 5 (10) ◽  
pp. 107144 ◽  
Author(s):  
Ashish V. Penumatcha ◽  
Suprem R. Das ◽  
Zhihong Chen ◽  
Joerg Appenzeller
Keyword(s):  
Hall Effect ◽  
Spin Hall Effect ◽  
Spin Torque

scholarly journals Modulation of spin-torque ferromagnetic resonance with a nanometer-thick platinum by ionic gating

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Ryo Ohshima ◽  
Yuto Kohsaka ◽  
Yuichiro Ando ◽  
Teruya Shinjo ◽  
Masashi Shiraishi
Keyword(s):  
Hall Effect ◽  
Memory Loss ◽  
Spin Hall Effect ◽  
Spin Torque ◽  
Spin Orbit ◽  
Metallic Materials ◽  
Spintronic Devices ◽  
Damping Parameter ◽  
Inverse Spin Hall Effect ◽  
High Bulk

AbstractThe spin Hall effect (SHE) and inverse spin Hall effect (ISHE) have played central roles in modern condensed matter physics especially in spintronics and spin-orbitronics, and much effort has been paid to fundamental and application-oriented research towards the discovery of novel spin–orbit physics and the creation of novel spintronic devices. However, studies on gate-tunability of such spintronics devices have been limited, because most of them are made of metallic materials, where the high bulk carrier densities hinder the tuning of physical properties by gating. Here, we show an experimental demonstration of the gate-tunable spin–orbit torque in Pt/Ni80Fe20 (Py) devices by controlling the SHE using nanometer-thick Pt with low carrier densities and ionic gating. The Gilbert damping parameter of Py and the spin-memory loss at the Pt/Py interface were modulated by ionic gating to Pt, which are compelling results for the successful tuning of spin–orbit interaction in Pt.

scholarly journals Crystalline Orientation–Dependent Spin Hall Effect in Epitaxial Platinum

2022 ◽  
Vol 9 ◽  
Author(s):  
Yuxuan Xiao ◽  
Hailong Wang ◽  
Eric E. Fullerton
Keyword(s):  
Hall Effect ◽  
Energy Efficient ◽  
Spin Hall Effect ◽  
Spin Torque ◽  
Temperature Dependent ◽  
Spin Conversion ◽  
Crystalline Orientation ◽  
Spintronic Devices ◽  
Crystalline Anisotropy ◽  
Pt Films

We report on the spin Hall effect in epitaxial Pt films with well-defined crystalline (200), (220), and (111) orientations and smooth surfaces. The magnitude of the spin Hall effect has been determined by spin–torque ferromagnetic resonance measurements on epitaxial Pt/Py heterostructures. We observed a 54% enhancement of the charge-to-spin conversion efficiency of the epitaxial Pt when currents are applied along the in-plane <002> direction. Temperature-dependent harmonic measurements on epitaxial Pt/Co/Ni heterostructures compared to a polycrystalline Pt/Co/Ni suggest the extrinsic mechanism underlying spin Hall effect in epitaxial Pt. Our work contributes to the development of energy-efficient spintronic devices by engineering the crystalline anisotropy of non-magnetic metals.

scholarly journals Spin Hall effect-driven spin torque in magnetic textures

2011 ◽  
Vol 99 (2) ◽  
pp. 022504 ◽  
Author(s):  
A. Manchon ◽  
K.-J. Lee
Keyword(s):  
Hall Effect ◽  
Spin Hall Effect ◽  
Spin Torque

scholarly journals Influence of Shape Anisotropy on Magnetization Dynamics Driven by Spin Hall Effect

2016 ◽  
Vol 2016 ◽  
pp. 1-8
Author(s):  
X. G. Li ◽  
Z. J. Liu ◽  
X. Y. Xie ◽  
A. G. Kang ◽  
W. N. Fu
Keyword(s):  
Hall Effect ◽  
Random Access ◽  
Shape Anisotropy ◽  
Spin Hall Effect ◽  
Spin Torque ◽  
Magnetization Dynamics ◽  
Magnetic Random Access Memory ◽  
Switching Characteristics ◽  
Analytical Expressions ◽  
The Magnetic Field

As the lateral dimension of spin Hall effect based magnetic random-access memory (SHE-RAM) devices is scaled down, shape anisotropy has varied influence on both the magnetic field and the current-driven switching characteristics. In this paper, we study such influences on elliptic film nanomagnets and theoretically investigate the switching characteristics for SHE-RAM element with in-plane magnetization. The analytical expressions for critical current density are presented and the results are compared with those obtained from macrospin and micromagnetic simulation. It is found that the key performance indicators for in-plane SHE-RAM, including thermal stability and spin torque efficiency, are highly geometry dependent and can be effectively improved by geometric design.

scholarly journals Modulation of Spin-Torque Ferromagnetic Resonance with a Nanometer-Thick Platinum by Ionic Gating

2021 ◽  
Author(s):  
Ryo Ohshima ◽  
Yuto Kohsaka ◽  
Yuichiro Ando ◽  
Teruya Shinjo ◽  
Masashi Shiraishi
Keyword(s):  
Hall Effect ◽  
Memory Loss ◽  
Spin Hall Effect ◽  
Spin Torque ◽  
Spin Orbit ◽  
Metallic Materials ◽  
Spintronic Devices ◽  
Damping Parameter ◽  
Inverse Spin Hall Effect ◽  
High Bulk

Abstract The spin Hall effect (SHE) and inverse spin Hall effect (ISHE) have played central roles in modern condensed matter physics especially in spintronics and spin-orbitronics, and much effort has been paid to fundamental and application-oriented research towards the discovery of novel spin-orbit physics and the creation of novel spintronic devices. However, studies on gate-tunability of such spintronics devices have been limited, because most of them are made of metallic materials, where the high bulk carrier densities hinder the tuning of physical properties by gating. Here, we show an experimental demonstration of the gate-tunable spin-orbit torque in Pt/Ni80Fe20 (Py) devices by controlling the SHE using nanometer-thick Pt with low carrier densities and ionic gating. The Gilbert damping parameter of Py and the spin-memory loss at the Pt/Py interface were modulated by ionic gating to Pt, which are compelling results for the successful tuning of spin-orbit interaction in Pt.

scholarly journals Current-Induced Switching of Perpendicularly Magnetized Magnetic Layers Using Spin Torque from the Spin Hall Effect

2012 ◽  
Vol 109 (9) ◽  
Author(s):  
Luqiao Liu ◽  
O. J. Lee ◽  
T. J. Gudmundsen ◽  
D. C. Ralph ◽  
R. A. Buhrman
Keyword(s):  
Hall Effect ◽  
Spin Hall Effect ◽  
Spin Torque ◽  
Magnetic Layers
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