Reliability enhancement in thin film transistors using Hf and Al co-incorporated ZnO active channels deposited by atomic-layer-deposition

So-Yeong Na; Sung-Min Yoon

doi:10.1039/c8ra07266c

Reliability enhancement in thin film transistors using Hf and Al co-incorporated ZnO active channels deposited by atomic-layer-deposition

RSC Advances ◽

10.1039/c8ra07266c ◽

2018 ◽

Vol 8 (60) ◽

pp. 34215-34223

Author(s):

So-Yeong Na ◽

Sung-Min Yoon

Keyword(s):

Thin Film ◽

Thin Films ◽

Atomic Layer Deposition ◽

Thin Film Transistors ◽

Atomic Layer ◽

Oxide Thin Films ◽

Layer Deposition ◽

Reliability Enhancement ◽

Active Channels

Oxide thin films transistors (TFTs) with Hf and Al co-incorporated ZnO active channels prepared by atomic-layer deposition are presented.

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Effects of Deposition Temperature on the Device Characteristics of Oxide Thin-Film Transistors Using In–Ga–Zn–O Active Channels Prepared by Atomic-Layer Deposition

ACS Applied Materials & Interfaces ◽

10.1021/acsami.7b04637 ◽

2017 ◽

Vol 9 (27) ◽

pp. 22676-22684 ◽

Cited By ~ 28

Author(s):

Sung-Min Yoon ◽

Nak-Jin Seong ◽

Kyujeong Choi ◽

Gi-Ho Seo ◽

Woong-Chul Shin

Keyword(s):

Thin Film ◽

Atomic Layer Deposition ◽

Thin Film Transistors ◽

Deposition Temperature ◽

Atomic Layer ◽

Oxide Thin Film ◽

Layer Deposition ◽

Active Channels

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Atomic Layer Deposition of Tungsten(III) Oxide Thin Films from W2(NMe2)6and Water: Precursor-Based Control of Oxidation State in the Thin Film Material

Journal of the American Chemical Society ◽

10.1021/ja063272w ◽

2006 ◽

Vol 128 (30) ◽

pp. 9638-9639 ◽

Cited By ~ 32

Author(s):

Dezelah ◽

Oussama M. El-Kadri ◽

Imre M. Szilágyi ◽

Joseph M. Campbell ◽

Kai Arstila ◽

...

Keyword(s):

Thin Film ◽

Thin Films ◽

Atomic Layer Deposition ◽

Oxidation State ◽

Atomic Layer ◽

Film Material ◽

Oxide Thin Films ◽

Thin Film Material ◽

Layer Deposition

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Robust SiO2 gate dielectric thin films prepared through plasma-enhanced atomic layer deposition involving di-sopropylamino silane (DIPAS) and oxygen plasma: Application to amorphous oxide thin film transistors

Ceramics International ◽

10.1016/j.ceramint.2017.10.075 ◽

2018 ◽

Vol 44 (2) ◽

pp. 1556-1565 ◽

Cited By ~ 8

Author(s):

Yoo-Jin Choi ◽

Seung-Muk Bae ◽

Jae-Hwan Kim ◽

Eui-Hyun Kim ◽

Hee-Soo Hwang ◽

...

Keyword(s):

Thin Film ◽

Thin Films ◽

Atomic Layer Deposition ◽

Thin Film Transistors ◽

Oxygen Plasma ◽

Gate Dielectric ◽

Atomic Layer ◽

Oxide Thin Film ◽

Dielectric Thin Films ◽

Layer Deposition

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Low-Temperature Process Compatibility for the Oxide Thin Film Transistors Using In-Ga-Zn-O Active Channels Prepared by Atomic-Layer Deposition at 150°C

2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) ◽

10.23919/am-fpd.2019.8830568 ◽

2019 ◽

Author(s):

So-Jung Yoon ◽

Seung-Bo Ko ◽

Nak-Jin Seong ◽

Kyujeong Choi ◽

Woong-Chul Shin ◽

...

Keyword(s):

Thin Film ◽

Low Temperature ◽

Atomic Layer Deposition ◽

Thin Film Transistors ◽

Atomic Layer ◽

Oxide Thin Film ◽

Layer Deposition ◽

Active Channels ◽

Process Compatibility ◽

Low Temperature Process

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A High Mobility of p-Type Sno Thin Films Grown By Atomic Layer Deposition for Thin Film Transistors

ECS Meeting Abstracts ◽

10.1149/ma2016-02/28/1890 ◽

2016 ◽

Keyword(s):

Thin Film ◽

Thin Films ◽

Atomic Layer Deposition ◽

Thin Film Transistors ◽

High Mobility ◽

Atomic Layer ◽

Layer Deposition ◽

P Type

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Preparation of ZnO thin films by plasma-assisted atomic layer deposition for the application to thin film transistors

2011 International Meeting for Future of Electron Devices ◽

10.1109/imfedk.2011.5944857 ◽

2011 ◽

Author(s):

Mai Tani ◽

Yumi Kawamura ◽

Masahiro Horita ◽

Yasuaki Ishikawa ◽

Yukiharu Uraoka

Keyword(s):

Thin Film ◽

Thin Films ◽

Atomic Layer Deposition ◽

Thin Film Transistors ◽

Atomic Layer ◽

Zno Thin Films ◽

Layer Deposition

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Fabrication of GdxFeyOz films using an atomic layer deposition-type approach

CrystEngComm ◽

10.1039/d0ce01252a ◽

2021 ◽

Author(s):

Pengmei Yu ◽

Sebastian M. J. Beer ◽

Anjana Devi ◽

Mariona Coll

Keyword(s):

Thin Films ◽

Atomic Layer Deposition ◽

Atomic Layer ◽

Complex Oxide ◽

Oxide Thin Films ◽

Layer Deposition ◽

Atomic Precision

The growth of complex oxide thin films with atomic precision offers bright prospects to study improved properties and novel functionalities.

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Low-temperature high-performance In-Ga-Sn-O thin-film transistors with Al2O3 grown by a facile dual-atomic layer deposition

Journal of Alloys and Compounds ◽

10.1016/j.jallcom.2021.160053 ◽

2021 ◽

pp. 160053

Author(s):

Hyunjae Jang ◽

Changyong Oh ◽

Tae Hyun Kim ◽

Hyeong Wook Kim ◽

Sang Ik Lee ◽

...

Keyword(s):

Thin Film ◽

Low Temperature ◽

Atomic Layer Deposition ◽

Thin Film Transistors ◽

High Performance ◽

Atomic Layer ◽

Layer Deposition

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Atomic layer deposition of rare earth oxides: erbium oxide thin films from β-diketonate and ozone precursors

Journal of Alloys and Compounds ◽

10.1016/j.jallcom.2003.11.149 ◽

2004 ◽

Vol 374 (1-2) ◽

pp. 124-128 ◽

Cited By ~ 57

Author(s):

Jani Päiväsaari ◽

Matti Putkonen ◽

Timo Sajavaara ◽

Lauri Niinistö

Keyword(s):

Thin Films ◽

Rare Earth ◽

Atomic Layer Deposition ◽

Atomic Layer ◽

Rare Earth Oxides ◽

Erbium Oxide ◽

Oxide Thin Films ◽

Ozone Precursors ◽

Layer Deposition

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Enhancement of Electrical Stability in Oxide Thin-Film Transistors Using Multilayer Channels Grown by Atomic Layer Deposition

IEEE Transactions on Electron Devices ◽

10.1109/ted.2013.2288925 ◽

2014 ◽

Vol 61 (1) ◽

pp. 73-78 ◽

Cited By ~ 41

Author(s):

Cheol Hyoun Ahn ◽

Myung Gu Yun ◽

Sang Yeol Lee ◽

Hyung Koun Cho

Keyword(s):

Thin Film ◽

Atomic Layer Deposition ◽

Thin Film Transistors ◽

Atomic Layer ◽

Oxide Thin Film ◽

Electrical Stability ◽

Layer Deposition

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