Carbon Nitride Film Formation by Low Energy Positive and Negative Ion Beam Deposition

AbstractUsing a newly developed ion beam apparatus, PANDA (Positive And Negative ions Deposition Apparatus), carbon nitride films were prepared by simultaneous deposition of mass-analyzed low energy positive and negative ions such as C2-, N+, under ultra high vacuum conditions, in the order of 10−6 Pa on silicon wafer. The ion energy was varied from 50 to 400 eV. The film properties as a function of their beam energy were evaluated by Rutherford Backscattering Spectrometry (RBS), Fourier Transform Infrared spectroscopy (FTIR) and Raman scattering. From the results, it is suggested that the C-N triple bond contents in films depends on nitrogen ion energy.

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Large Area Surface Treatment by Ion Beam Technology

MRS Proceedings ◽

10.1557/proc-438-611 ◽

1996 ◽

Vol 438 ◽

Cited By ~ 2

Author(s):

R. L. C. Wu ◽

W. Lanter

Keyword(s):

Ion Beam ◽

High Vacuum ◽

Polycrystalline Diamond ◽

Carbon Films ◽

Ultra High Vacuum ◽

Diamond Like Carbon ◽

Chemical Compositions ◽

Rf Power ◽

Large Area ◽

Ion Energy

AbstractAn ultra high vacuum ion beam system, consisting of a 20 cm diameter Rf excilted (13.56 MHz) ion gun and a four-axis substrate scanner, has been used to modify large surfaces (up to 1000 cm2) of various materials, including; infrared windows, silicon nitride, polycrystalline diamond, 304 and 316 stainless steels, 440C and M50 steels, aluminum alloys, and polycarbonates; by depositing different chemical compositions of diamond-like carbon films. The influences of ion energy, Rf power, gas composition (H2/CH4 , Ar/CH4 and O2/CH4/H2), on the diamond-like carbon characteristics has been studied. Particular attention was focused on adhesion, environmental effects, IR(3–12 μm) transmission, coefficient of friction, and wear factors under spacelike environments of diamond-like carbon films on various substrates. A quadrupole mass spectrometer was utilized to monitor the ion beam composition for quality control and process optimization.

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Characterization and light emission properties of osmium silicides synthesized by low energy ion implantation

MRS Proceedings ◽

10.1557/proc-1066-a07-11 ◽

2008 ◽

Vol 1066 ◽

Author(s):

Prakash R. Poudel ◽

K. Hossain ◽

J. Li ◽

B. Gorman ◽

A. Neogi ◽

...

Keyword(s):

Light Emission ◽

Rutherford Backscattering Spectrometry ◽

Ion Beam ◽

Ion Source ◽

Alpha Particles ◽

Low Energy ◽

Negative Ion ◽

Tandem Accelerator ◽

Cross Sectional ◽

Osmium Silicide

ABSTRACTLow energy (55 KeV) Osmium ( Os− ) negative ion beam was used to implant (5×1016 atoms/cm2 ) into p-type-Si (100). The implantation was performed with the ion source of a National Electrostatic Corp. 3 MV Tandem accelerator. The implanted sample was subsequently annealed at 650 °C in a gas mixture that was 4% H2 + 96% Ar. Rutherford Backscattering spectrometry (RBS) analysis with 1.5 MeV Alpha particles was used to monitor the precipitate formation. Photoluminescence (PL) measurements were also performed to study possible applications of silicides in light emission. Cross-sectional Scanning Electron Microscopy (X-SEM) was performed for topographic image of the implanted region. RBS along with PL measurements indicate that the presence of osmium silicide (Os2Si3) phase for light emission in the implanted region of the sample.

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Formation of High Purity Films by Negative Ion Beam Sputtering Using an Ultra-high Vacuum Self-Sputtering Method

Materials Transactions JIM ◽

10.2320/matertrans1989.41.31 ◽

2000 ◽

Vol 41 (1) ◽

pp. 31-33

Author(s):

Akiyoshi Chayahara ◽

Atsushi Kinomura ◽

Nobuteru Tsubouchi ◽

Claire Heck ◽

Yuji Horino

Keyword(s):

High Purity ◽

Ion Beam ◽

High Vacuum ◽

Ultra High Vacuum ◽

Negative Ion ◽

Ion Beam Sputtering ◽

Beam Sputtering

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Ultra-high vacuum direct bonding of a p–n junction GaAs wafer using low-energy hydrogen ion beam surface cleaning

Vacuum ◽

10.1016/j.vacuum.2006.12.003 ◽

2007 ◽

Vol 81 (8) ◽

pp. 974-978 ◽

Cited By ~ 6

Author(s):

N. Razek ◽

A. Schindler ◽

B. Rauschenbach

Keyword(s):

Ion Beam ◽

High Vacuum ◽

Surface Cleaning ◽

Low Energy ◽

Ultra High Vacuum ◽

Hydrogen Ion ◽

Gaas Wafer ◽

Beam Surface

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Design of a Compact Negative Metal Ion Beam Source for Surface Studies

MRS Proceedings ◽

10.1557/proc-396-623 ◽

1995 ◽

Vol 396 ◽

Cited By ~ 6

Author(s):

Y. Park ◽

Y.W. Ko ◽

M.H. Sohn ◽

S.I. Kim

Keyword(s):

Solid State ◽

Metal Ion ◽

Beam Energy ◽

Ion Beam ◽

High Vacuum ◽

Ion Source ◽

Ultra High Vacuum ◽

Negative Ion ◽

Beam Diameter ◽

Beam Source

AbstractA compact negative metal ion beam source for direct low energy metal ion beam depositions studies in ultra high vacuum (UHV) environment, has been developed. The ion source is based on SKION's Solid State Ion Beam Technology. The secondary negative metal ion beam is effectively produced by primary cesium positive ion bombardment (negative ion yield varies from 0.1-0.5 for carbon). The beam diameter is in the range of 0.2∼3.0 cm depending on the focusing and ion beam energy. The ion source produces negative ion currents of about 0.8 mA/cm2. The energy spread of the ion beam is less then ±5% of the ion beam energy. The energy of negative metal ion beam can be independently controlled in the range of 10-300 eV. Due to the complete solid state ion technology , the source can be operated while maintaining chamber pressures of less then 10-10 Torr.

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