A top-gate GaN nanowire metal–semiconductor field effect transistor with improved channel electrostatic control
Keyword(s):
2006 ◽
pp. 1549-1552
Keyword(s):
2016 ◽
Vol 16
(5)
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pp. 5049-5052
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2006 ◽
Vol 35
(4)
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pp. 670-674
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2014 ◽
Vol 212
(2)
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pp. 390-393
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Keyword(s):
2019 ◽
Vol 40
(3)
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pp. 427-430
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Keyword(s):
2009 ◽
Vol 6
(S2)
◽
pp. S535-S537
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