Spectroscopic ellipsometry-based study of optical properties of amorphous and crystalline ZnSnO alloys and Zn2SnO4 thin films grown using sputtering deposition: Dielectric function and subgap states

Nanostructured Fe:SnO2 thin films were deposited on glass substrates through sol–gel spin coating method. Films were synthesized with different iron quantities including 0%, 4%, 8% and 12% (wt.%). The effects of Fe concentration on optical properties of films were investigated by spectroscopic ellipsometry (SE) technique. SE measured ([Formula: see text]) parameters for films in the wavelength range between 300[Formula: see text]nm to 800[Formula: see text]nm. Optical properties including the refractive index, extinction coefficient, transmittance, dielectric constants and optical conductivity were determined by fitting the SE measured ([Formula: see text]) parameters and data obtained from the optical model-based analysis. Results showed that the transmittance values increase by increment of Fe concentration from 0% to 12%. The bandgap energy ([Formula: see text] of prepared thin films was also calculated. [Formula: see text] values were between 3.44 and 3.58[Formula: see text]eV. Dispersion parameters including the high frequency dielectric constant ([Formula: see text] and the ratio of free carrier concentration to effective mass (N/m[Formula: see text] were then obtained for the prepared films.

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Anisotropy of optical properties of conjugated polymer thin films by spectroscopic ellipsometry

Journal of Applied Physics ◽

10.1063/1.1610236 ◽

2003 ◽

Vol 94 (8) ◽

pp. 4923 ◽

Cited By ~ 31

Author(s):

Maria Losurdo ◽

Giovanni Bruno ◽

Eugene A. Irene

Keyword(s):

Thin Films ◽

Optical Properties ◽

Spectroscopic Ellipsometry ◽

Conjugated Polymer ◽

Polymer Thin Films

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Optical properties of amorphous and crystalline Sb-doped SnO2 thin films studied with spectroscopic ellipsometry: Optical gap energy and effective mass

Journal of Applied Physics ◽

10.1063/1.4929487 ◽

2015 ◽

Vol 118 (8) ◽

pp. 085303 ◽

Cited By ~ 25

Author(s):

Hyeon Seob So ◽

Jun-Woo Park ◽

Dae Ho Jung ◽

Kun Hee Ko ◽

Hosun Lee

Keyword(s):

Thin Films ◽

Optical Properties ◽

Effective Mass ◽

Spectroscopic Ellipsometry ◽

Gap Energy ◽

Optical Gap ◽

Optical Gap Energy ◽

Sno2 Thin Films

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Optical properties of nitrogen-doped graphene thin films probed by spectroscopic ellipsometry

Thin Solid Films ◽

10.1016/j.tsf.2014.05.020 ◽

2014 ◽

Vol 571 ◽

pp. 675-679 ◽

Cited By ~ 10

Author(s):

C.C. Shen ◽

C.C. Tseng ◽

C.T. Lin ◽

L.J. Li ◽

H.L. Liu

Keyword(s):

Thin Films ◽

Optical Properties ◽

Spectroscopic Ellipsometry ◽

Nitrogen Doped ◽

Nitrogen Doped Graphene ◽

Doped Graphene

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Determination and Critical Assessment of the Optical Properties of Common Substrate Materials Used in III-V Nitride Heterostructures with Vacuum Ultraviolet Spectroscopic Ellipsometry

MRS Proceedings ◽

10.1557/proc-693-i8.3.1 ◽

2001 ◽

Vol 693 ◽

Cited By ~ 1

Author(s):

N.V. Edwards ◽

O.P.A. Lindquist ◽

L.D. Madsen ◽

S. Zollner ◽

K. Järrehdahl ◽

...

Keyword(s):

Optical Properties ◽

Dielectric Function ◽

Spectroscopic Ellipsometry ◽

Optical Constants ◽

Vacuum Ultraviolet ◽

Critical Assessment ◽

Optical Transitions ◽

Common Substrate ◽

Materials Used

AbstractAs a first step toward enabling the in-line metrology of III-V nitride heterostructure and materials, we present the optical constants of the two common substrate materials over an unprecendented spectral range. Vacuum Ultraviolet spectroscopic ellipsometry (VUVSE) was used to obtain the optical constants for Al2O3 and the ordinary and extra-ordinary component of the dielectric function for both 4H- and 6H-SiC. The results are discussed in the context of anisotropy, polytypism, bandstructure, optical transitions, and preparation/characterization of abrupt surfaces, where appropriate.

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