Determination and Critical Assessment of the Optical Properties of Common Substrate Materials Used in III-V Nitride Heterostructures with Vacuum Ultraviolet Spectroscopic Ellipsometry

2001 ◽  
Vol 693 ◽  
Author(s):  
N.V. Edwards ◽  
O.P.A. Lindquist ◽  
L.D. Madsen ◽  
S. Zollner ◽  
K. Järrehdahl ◽  
...  
Keyword(s):  
Optical Properties ◽  
Dielectric Function ◽  
Spectroscopic Ellipsometry ◽  
Optical Constants ◽  
Vacuum Ultraviolet ◽  
Critical Assessment ◽  
Optical Transitions ◽  
Common Substrate ◽  
Materials Used

AbstractAs a first step toward enabling the in-line metrology of III-V nitride heterostructure and materials, we present the optical constants of the two common substrate materials over an unprecendented spectral range. Vacuum Ultraviolet spectroscopic ellipsometry (VUVSE) was used to obtain the optical constants for Al2O3 and the ordinary and extra-ordinary component of the dielectric function for both 4H- and 6H-SiC. The results are discussed in the context of anisotropy, polytypism, bandstructure, optical transitions, and preparation/characterization of abrupt surfaces, where appropriate.

Effects of alloying on the optical properties of organic–inorganic lead halide perovskite thin films

2016 ◽  
Vol 4 (33) ◽  
pp. 7775-7782 ◽  
Author(s):  
Paul F. Ndione ◽  
Zhen Li ◽  
Kai Zhu
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Spectroscopic Ellipsometry ◽  
Optical Constants ◽  
Optical Transitions ◽  
Inorganic Perovskite ◽  
Inorganic Lead ◽  
Halide Perovskite ◽  
Lead Halide

Spectroscopic ellipsometry analysis of optical transitions and optical constants in hybrid organic–inorganic perovskite alloys.

scholarly journals Optical properties of AlN determined by vacuum ultraviolet spectroscopy and spectroscopic ellipsometry data

1999 ◽  
Vol 14 (11) ◽  
pp. 4337-4344 ◽  
Author(s):  
D. J. Jones ◽  
R. H. French ◽  
H. Müllejans ◽  
S. Loughin ◽  
A. D. Dorneich ◽  
...  
Keyword(s):  
Optical Properties ◽  
Spectroscopic Ellipsometry ◽  
Optical Constants ◽  
Vacuum Ultraviolet ◽  
Accurate Knowledge ◽  
Vacuum Ultraviolet Spectroscopy ◽  
Data Extrapolation ◽  
Compact Disks ◽  
Ellipsometry Data ◽  
Interatomic Bonding

Precise and accurate knowledge of the optical properties of aluminum nitride (AlN) in the ultraviolet (UV) and visible (VIS) regions is important because of the increasing application of AlN in optical and electro-optical devices, including compact disks, phase shift lithography masks, and AlN/GaN multilayer devices. The interband optical properties in the vacuum ultraviolet (VUV) region of 6–44 eV have been investigated previously because they convey detailed information on the electronic structure and interatomic bonding of the material. In this work, we have combined spectroscopic ellipsometry with UV/VIS and VUV spectroscopy to directly determine the optical constants of AlN in this range, thereby reducing the uncertainty in the preparation of the low-energy data extrapolation essential for Kramers–Kronig analysis of VUV reflectance. We report the complex optical properties of AlN, over the range of 1.5–42 eV, showing improved agreement with theory when contrasted with earlier results.

Analysis of High Dose Implanted Silicon by High Depth Resolution Rbs and Spectroscopic Ellipsometry and TEM

1984 ◽  
Vol 35 ◽  
Author(s):  
T. Lohner ◽  
G. Mezey ◽  
M. Fried ◽  
L. GhiţA ◽  
C. Ghiţa ◽  
...  
Keyword(s):  
Optical Properties ◽  
Ion Implantation ◽  
Spectroscopic Ellipsometry ◽  
Composite Structures ◽  
Depth Resolution ◽  
High Dose ◽  
Detailed Characterization ◽  
High Depth ◽  
Qualitative Picture

ABSTRACTOne of the applications of high dose ion implantation is to form surface alloys or compound layers. The detailed characterization of such composite structures is of great importance. This paper tries to answer the question: how can we outline, at least, a qualitative picture from the optical properties measured by ellipsometry of high dose Al and Sb implanted silicon. Attempts are done to separate the effect of implanted impurities from the dominant disorder contribution to the measured optical properties. As the ellipsometry does not provide information enough to decide the applicability of optical models therefore methods sensitive to the structure (channeling and TEM) were applied too.

Spectroscopic Ellipsometry Analysis of InGaN/GaN and AlGaN/GaN Heterostructures Using a Parametric Dielectric Function Model

1999 ◽  
Vol 595 ◽  
Author(s):  
J. Wagner ◽  
A. Ramakrishnan ◽  
H. Obloh ◽  
M. Kunzer ◽  
K. Köhler ◽  
...  
Keyword(s):  
Band Gap ◽  
Dielectric Function ◽  
Spectroscopic Ellipsometry ◽  
Composition Dependence ◽  
Band Gap Energy ◽  
Function Model ◽  
Gap Energy ◽  
The Individual ◽  
Gap Data

AbstractSpectroscopic ellipsometry (SE) has been used for the characterization of AlGaN/GaN and InGaN/GaN heterostructures. The resulting pseudodielectric function spectra were analyzed using a multilayer approach, describing the dielectric functions of the individual layers by a parametric oscillator model. From this analysis, the dielectric function spectra of GaN, AlxGa1−xN (x≤0.16), and In0.13Ga0.87N were deduced. Further, the dependence of the AlxGa1−xN band gap energy on the Al mole fraction was derived and compared with photoluminescence data recorded on the same material. The SE band gap data are compatible with a bowing parameter close to 1 eV for the composition dependence of the AlxGa1−xN gap energy. Finally, the parametric dielectric functions have been used to model the pseudodielectric function spectrum of a complete GaN/AlGaN/InGaN LED structure.

Optical properties of thickness-controlled PtSe2 thin films studied via spectroscopic ellipsometry

2020 ◽  
Vol 22 (45) ◽  
pp. 26383-26389
Author(s):  
Junbo He ◽  
Wei Jiang ◽  
Xudan Zhu ◽  
Rongjun Zhang ◽  
Jianlu Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Spectroscopic Ellipsometry ◽  
Optical Transitions

We revealed the influences of strong interlayer interactions on optical transitions and excitons in layered PtSe2 films.

Sign in / Sign up

Export Citation Format

Share Document