High dopant activation of phosphorus in Ge crystal with high-temperature implantation and two-step microwave annealing

2016 ◽  
Vol 109 (12) ◽  
pp. 122103 ◽  
Author(s):  
Tzu-Lang Shih ◽  
Yin-Hsien Su ◽  
Wen-Hsi Lee
Keyword(s):  
High Temperature ◽  
Dopant Activation ◽  
Microwave Annealing

Dopant Activation in Single-Crystalline Germanium by Low-Temperature Microwave Annealing

2011 ◽  
Vol 32 (2) ◽  
pp. 194-196 ◽  
Author(s):  
Yao-Jen Lee ◽  
Shang-Shiun Chuang ◽  
Fu-Kuo Hsueh ◽  
Ho-Ming Lin ◽  
Shich-Chuang Wu ◽  
...  
Keyword(s):  
Low Temperature ◽  
Single Crystalline ◽  
Dopant Activation ◽  
Microwave Annealing ◽  
Crystalline Germanium

Study of High Temperature Microwave Annealing on the Performance of 4H-SiC MOS Capacitors

2012 ◽  
Vol 717-720 ◽  
pp. 769-772
Author(s):  
Harsh Naik ◽  
Z. Li ◽  
H. Issa ◽  
Y.L. Tian ◽  
T. Paul Chow
Keyword(s):  
High Temperature ◽  
Covalent Bond ◽  
Attractive Alternative ◽  
Mos Capacitors ◽  
Microwave Annealing ◽  
Annealing Conditions ◽  
Mos Devices ◽  
Strong Covalent Bond ◽  
Post Implantation ◽  
Channel Region

The strong covalent bond of SiC imposes harsh post implantation annealing condition requirement for SiC MOS devices. As a consequence the effect of the annealing conditions on the channel region of the MOS devices becomes critical. High temperature microwave annealing has been shown to be an attractive alternative to conventional thermal annealing techniques. The effect of high temperature rapid microwave annealing on the performance of 4H-SiC MOS capacitors has been studied in this paper. Annealing temperatures ranging from 1600°C up to 2000°C for 30secs is used and the effect of annealing conditions is studied via C-V measurements on MOS capacitors.

Low-Temperature Microwave Annealing Process for Dopant Activation and Thermal Stability of TiN Material

2012 ◽  
Vol 15 (6) ◽  
pp. H185
Author(s):  
Bo-An Tsai ◽  
Chiung-Hui Lai ◽  
Bo-Shiun Lee ◽  
Chih-Wei Luo ◽  
Yao-Jen Lee
Keyword(s):  
Thermal Stability ◽  
Low Temperature ◽  
Annealing Process ◽  
Dopant Activation ◽  
Microwave Annealing ◽  
Thermal Stability Of

Effective dopant activation by susceptor-assisted microwave annealing of low energy boron implanted and phosphorus implanted silicon

2013 ◽  
Vol 114 (24) ◽  
pp. 244903 ◽  
Author(s):  
Zhao Zhao ◽  
N. David Theodore ◽  
Rajitha N. P. Vemuri ◽  
Wei Lu ◽  
S. S. Lau ◽  
...  
Keyword(s):  
Low Energy ◽  
Dopant Activation ◽  
Microwave Annealing ◽  
Effective Dopant

Effective dopant activation via low temperature microwave annealing of ion implanted silicon

2013 ◽  
Vol 103 (19) ◽  
pp. 192103 ◽  
Author(s):  
Zhao Zhao ◽  
N. David Theodore ◽  
Rajitha N. P. Vemuri ◽  
Sayantan Das ◽  
Wei Lu ◽  
...  
Keyword(s):  
Low Temperature ◽  
Dopant Activation ◽  
Microwave Annealing ◽  
Effective Dopant ◽  
Ion Implanted
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