Accuracy of expressions for the fill factor of a solar cell in terms of open-circuit voltage and ideality factor

2016 ◽  
Vol 120 (12) ◽  
pp. 123111 ◽  
Author(s):  
Mehdi Leilaeioun ◽  
Zachary C. Holman
1989 ◽  
Vol 145 ◽  
Author(s):  
V. S. Sundaram ◽  
J. E. Avery ◽  
G. R. Girard ◽  
H. E. Hager ◽  
A. G. Thompson ◽  
...  

AbstractUsing an alternate arsenic source, namely, Tertiary Butyl Arsine, a concentrator GaAs solar cell has been grown in a low pressure metal organic chemical vapor deposition reactor. Under 72 sun, air mass 1.5 illumination, the cell had an open circuit voltage of 1.1 V, a fill factor of 83% and an overall efficiency of 21%.


2012 ◽  
Vol 569 ◽  
pp. 172-175
Author(s):  
Peng Wang ◽  
Li Bo Fan ◽  
Meng Yuan Yang ◽  
Zhen Hua Zhang ◽  
Xin Bing Zhu ◽  
...  

A new hybrid film solar cell was made with a structure of Glass/ITO/PbS/P3HT/Al. PbS film was prepared by a simple solid-solid reaction and poly(3-hexylthiophene) (P3HT) film was obtained by a spin coating method. The solar cells are photosensitive in a large spectral range (extending from near infrared to high energy side regions). Without any special treatment, the cell with an area of 0.15 cm2 has shown values of open-circuit voltage (Voc) of 85 mV and fill factor (FF) of 0.33 under an illumination intensity of 100 mW/cm2.


2011 ◽  
Vol 347-353 ◽  
pp. 3666-3669
Author(s):  
Ming Biao Li ◽  
Li Bin Shi

The AMPS-ID program is used to investigate optical and electrical properties of the solar cell of a-SiC:H/a-Si1-xGex:H/a-Si:H thin films. The short circuit current density, open circuit voltage, fill factor and conversion efficiency of the solar cell are investigated. For x=0.1, the conversion efficiency of the solar cell achieve maximum 9.19 % at the a-Si1-xGex:H thickness of 340 nm.


2018 ◽  
Vol 282 ◽  
pp. 300-305 ◽  
Author(s):  
Dilara Gokcen Buldu ◽  
Jessica de Wild ◽  
Thierry Kohl ◽  
Sunil Suresh ◽  
Gizem Birant ◽  
...  

Interface quality plays a key role in solar cell applications. Interface recombination at the front and rear surfaces, which determine this quality, have significant effects on open circuit voltage and fill factor values. In this work, several surface treatments were applied on Cu(In,Ga)Se2 (CIGS) surfaces to improve the interface quality. Besides, the passivation layer implementation was investigated to reduce interface recombination between the buffer and absorber layers.


2014 ◽  
Vol 2014 ◽  
pp. 1-6 ◽  
Author(s):  
Hwen-Fen Hong ◽  
Tsung-Shiew Huang ◽  
Wu-Yih Uen ◽  
Yen-Yeh Chen

We performed accelerated tests on sealed and nonsealed InGaP/InGaAs/Ge triple-junction (TJ) solar cells in a complex high temperature and high humidity environment and investigated the electrical properties over time. The degradation of energy conversion efficiency in nonsealed cells was found to be more serious than that in sealed cells. The short-circuit current (ISC), open-circuit voltage (VOC), and fill factor (FF) of sealed cells changed very slightly, though the conversion efficiency decreased 3.6% over 500 h of exposure. This decrease of conversion efficiency was suggested to be due to the deterioration of silicone encapsulant. TheISC,VOC, and FF of nonsealed cells decreased with increasing exposure time. By EL and SEM analysis, the root causes of degradation can be attributed to the damage and cracks near the edge of cells induced by the moisture ingress. It resulted in shunt paths that lead to a deterioration of the conversion efficiency of solar cell by increasing the leakage current, as well as decreasing open-circuit voltage and fill factor of nonsealed solar cells.


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