InP nanowire solar cell with high open circuit voltage and high fill factor

2012 ◽  
Author(s):  
Y. Cui ◽  
J. Wang ◽  
S.R. Plissard ◽  
M. Trainor ◽  
T.T.T. Vu ◽  
...  
Keyword(s):  
Solar Cell ◽  
Fill Factor ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
High Fill Factor

GaAs Solar Cell Using an Alternate Arsenic Source

1989 ◽  
Vol 145 ◽  
Author(s):  
V. S. Sundaram ◽  
J. E. Avery ◽  
G. R. Girard ◽  
H. E. Hager ◽  
A. G. Thompson ◽  
...  
Keyword(s):  
Solar Cell ◽  
Fill Factor ◽  
Open Circuit Voltage ◽  
Chemical Vapor ◽  
Open Circuit ◽  
Organic Chemical ◽  
Tertiary Butyl ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition ◽  
Arsenic Source

AbstractUsing an alternate arsenic source, namely, Tertiary Butyl Arsine, a concentrator GaAs solar cell has been grown in a low pressure metal organic chemical vapor deposition reactor. Under 72 sun, air mass 1.5 illumination, the cell had an open circuit voltage of 1.1 V, a fill factor of 83% and an overall efficiency of 21%.

Glass/ITO/PbS/P3HT/Al: A Hybrid Film Solar Cell

2012 ◽  
Vol 569 ◽  
pp. 172-175
Author(s):  
Peng Wang ◽  
Li Bo Fan ◽  
Meng Yuan Yang ◽  
Zhen Hua Zhang ◽  
Xin Bing Zhu ◽  
...  
Keyword(s):  
Solar Cell ◽  
Fill Factor ◽  
Near Infrared ◽  
Hybrid Film ◽  
Open Circuit Voltage ◽  
High Energy ◽  
Open Circuit ◽  
Special Treatment ◽  
P3ht Film ◽  
Coating Method

A new hybrid film solar cell was made with a structure of Glass/ITO/PbS/P3HT/Al. PbS film was prepared by a simple solid-solid reaction and poly(3-hexylthiophene) (P3HT) film was obtained by a spin coating method. The solar cells are photosensitive in a large spectral range (extending from near infrared to high energy side regions). Without any special treatment, the cell with an area of 0.15 cm2 has shown values of open-circuit voltage (Voc) of 85 mV and fill factor (FF) of 0.33 under an illumination intensity of 100 mW/cm2.

Polymers from phenyl-substituted benzodithiophene and tetrafluoridequinoxaline with high open circuit voltage and high fill factor

2016 ◽  
Vol 37 ◽  
pp. 287-293 ◽  
Author(s):  
Jun Yuan ◽  
Lixia Qiu ◽  
Shutao Xu ◽  
Zhiguo Zhang ◽  
Yongfang Li ◽  
...  
Keyword(s):  
Fill Factor ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
High Fill Factor

High Efficiency AlxGa1-xAs–GaAs Solar Cells with High Open-Circuit Voltage and High Fill Factor

1980 ◽  
Vol 19 (S2) ◽  
pp. 187 ◽  
Author(s):  
Susumu Yoshida ◽  
Kotaro Mitsui ◽  
Takao Oda ◽  
Kiyoshi Shirahata
Keyword(s):  
Solar Cells ◽  
Fill Factor ◽  
High Efficiency ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
High Fill Factor

A Study on Optical and Electrical Properties of Solar Cells of a-Si1-XGeX:H

2011 ◽  
Vol 347-353 ◽  
pp. 3666-3669
Author(s):  
Ming Biao Li ◽  
Li Bin Shi
Keyword(s):  
Solar Cell ◽  
Electrical Properties ◽  
Conversion Efficiency ◽  
Fill Factor ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Optical And Electrical Properties

The AMPS-ID program is used to investigate optical and electrical properties of the solar cell of a-SiC:H/a-Si1-xGex:H/a-Si:H thin films. The short circuit current density, open circuit voltage, fill factor and conversion efficiency of the solar cell are investigated. For x=0.1, the conversion efficiency of the solar cell achieve maximum 9.19 % at the a-Si1-xGex:H thickness of 340 nm.

scholarly journals Wet Processing in State-of-the-Art Cu(In,Ga)(S,Se)2 Thin Film Solar Cells

2018 ◽  
Vol 282 ◽  
pp. 300-305 ◽  
Author(s):  
Dilara Gokcen Buldu ◽  
Jessica de Wild ◽  
Thierry Kohl ◽  
Sunil Suresh ◽  
Gizem Birant ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Fill Factor ◽  
Open Circuit Voltage ◽  
State Of The Art ◽  
Open Circuit ◽  
Thin Film Solar Cells ◽  
Interface Quality ◽  
Interface Recombination ◽  
Wet Processing

Interface quality plays a key role in solar cell applications. Interface recombination at the front and rear surfaces, which determine this quality, have significant effects on open circuit voltage and fill factor values. In this work, several surface treatments were applied on Cu(In,Ga)Se2 (CIGS) surfaces to improve the interface quality. Besides, the passivation layer implementation was investigated to reduce interface recombination between the buffer and absorber layers.

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