Direct observation of trapped charges under field-plate in p-GaN gate AlGaN/GaN high electron mobility transistors by electric field-induced optical second-harmonic generation

Applied Physics Letters ◽

10.1063/1.4977084 ◽

2017 ◽

Vol 110 (9) ◽

pp. 092101 ◽

Author(s):

Takashi Katsuno ◽

Takaaki Manaka ◽

Narumasa Soejima ◽

Mitsumasa Iwamoto

Keyword(s):

Electric Field ◽

Second Harmonic Generation ◽

Harmonic Generation ◽

Electron Mobility ◽

Second Harmonic ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Field Plate ◽

Electron Mobility Transistors

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Current collapse imaging of Schottky gate AlGaN/GaN high electron mobility transistors by electric field-induced optical second-harmonic generation measurement

Applied Physics Letters ◽

10.1063/1.4885838 ◽

2014 ◽

Vol 104 (25) ◽

pp. 252112 ◽

Author(s):

Takashi Katsuno ◽

Takaaki Manaka ◽

Tsuyoshi Ishikawa ◽

Hiroyuki Ueda ◽

Tsutomu Uesugi ◽

...

Keyword(s):

Electric Field ◽

Harmonic Generation ◽

Electron Mobility ◽

Second Harmonic ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Current Collapse ◽

Second Harmonic Generation Measurement

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Three-dimensional current collapse imaging of AlGaN/GaN high electron mobility transistors by electric field-induced optical second-harmonic generation

Applied Physics Letters ◽

10.1063/1.4967221 ◽

2016 ◽

Vol 109 (19) ◽

pp. 192102 ◽

Author(s):

Takashi Katsuno ◽

Takaaki Manaka ◽

Tsuyoshi Ishikawa ◽

Narumasa Soejima ◽

Tsutomu Uesugi ◽

...

Keyword(s):

Electric Field ◽

Harmonic Generation ◽

Electron Mobility ◽

Second Harmonic ◽

Three Dimensional ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Current Collapse

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Degradation analysis of AlGaN/GaN high electron mobility transistor by electroluminescence, electric field-induced optical second-harmonic generation, and photoluminescence imaging

Applied Physics Letters ◽

10.1063/1.5019998 ◽

2018 ◽

Vol 113 (1) ◽

pp. 012106 ◽

Author(s):

Takashi Katsuno ◽

Takaaki Manaka ◽

Narumasa Soejima ◽

Tsuyoshi Ishikawa ◽

Mitsumasa Iwamoto

Keyword(s):

Electric Field ◽

Second Harmonic Generation ◽

Harmonic Generation ◽

Electron Mobility ◽

Second Harmonic ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility ◽

Optical Second Harmonic Generation ◽

Degradation Analysis

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Reverse blocking enhancement of drain field plate in Schottky-drain AlGaN/GaN high-electron mobility transistors

Chinese Physics B ◽

10.1088/1674-1056/23/9/097305 ◽

2014 ◽

Vol 23 (9) ◽

pp. 097305 ◽

Author(s):

Sheng-Lei Zhao ◽

Yuan Wang ◽

Xiao-Lei Yang ◽

Zhi-Yu Lin ◽

Chong Wang ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Field Plate ◽

Electron Mobility Transistors ◽

Reverse Blocking ◽

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Improving performance in single field plate power High Electron Mobility Transistors (HEMTs) based on AlGaN/GaN

10.1109/asqed.2009.5206279 ◽

2009 ◽

Author(s):

Morteza Fathipour ◽

Negin Peyvast ◽

Reza Azadvari

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Field Plate ◽

Electron Mobility Transistors ◽

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Electric field dependence of optical phonon frequencies in wurtzite GaN observed in GaN high electron mobility transistors

Journal of Applied Physics ◽

10.1063/1.4964689 ◽

2016 ◽

Vol 120 (15) ◽

pp. 155104 ◽

Author(s):

Kevin R. Bagnall ◽

Cyrus E. Dreyer ◽

David Vanderbilt ◽

Evelyn N. Wang

Keyword(s):

Electric Field ◽

Field Dependence ◽

Optical Phonon ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Electric Field Dependence

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Very high voltage AlGaN/GaN high electron mobility transistors using a field plate deposited on a stepped insulator

Solid-State Electronics ◽

10.1016/s0038-1101(01)00158-7 ◽

2001 ◽

Vol 45 (9) ◽

pp. 1645-1652 ◽

Author(s):

Shreepad Karmalkar ◽

Umesh K. Mishra

Keyword(s):

High Voltage ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Field Plate ◽

Electron Mobility Transistors ◽

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Erratum: “The role of electric field-induced strain in the degradation mechanism of AlGaN/GaN high-electron-mobility transistors” [Appl. Phys. Lett. 94, 053501 (2009)]

Applied Physics Letters ◽

10.1063/1.3182628 ◽

2009 ◽

Vol 95 (2) ◽

pp. 029902

Author(s):

C. Rivera ◽

E. Muñoz

Keyword(s):

Electric Field ◽

Electron Mobility ◽

Degradation Mechanism ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Electric Field Induced Strain

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Electric field driven plasmon dispersion in AlGaN/GaN high electron mobility transistors

Chinese Physics B ◽

10.1088/1674-1056/22/11/117306 ◽

2013 ◽

Vol 22 (11) ◽

pp. 117306 ◽

Author(s):

Ren-Bing Tan ◽

Hua Qin ◽

Xiao-Yu Zhang ◽

Wen Xu

Keyword(s):

Electric Field ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Plasmon Dispersion

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Enhancement of breakdown voltage in AlGaN/GaN high electron mobility transistors using a field plate

IEEE Transactions on Electron Devices ◽

10.1109/16.936500 ◽

2001 ◽

Vol 48 (8) ◽

pp. 1515-1521 ◽

Author(s):

S. Karmalkar ◽

U.K. Mishra

Keyword(s):

Breakdown Voltage ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Field Plate ◽

Electron Mobility Transistors

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