Improving performance in single field plate power High Electron Mobility Transistors (HEMTs) based on AlGaN/GaN
2001 ◽
Vol 45
(9)
◽
pp. 1645-1652
◽
Enhancement of breakdown voltage in AlGaN/GaN high electron mobility transistors using a field plate
2001 ◽
Vol 48
(8)
◽
pp. 1515-1521
◽
2014 ◽
Vol 32
(2)
◽
pp. 022202
◽
2013 ◽
Vol 52
(8S)
◽
pp. 08JN21
◽