Reverse blocking enhancement of drain field plate in Schottky-drain AlGaN/GaN high-electron mobility transistors

Chinese Physics B ◽

10.1088/1674-1056/23/9/097305 ◽

2014 ◽

Vol 23 (9) ◽

pp. 097305 ◽

Author(s):

Sheng-Lei Zhao ◽

Yuan Wang ◽

Xiao-Lei Yang ◽

Zhi-Yu Lin ◽

Chong Wang ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Field Plate ◽

Electron Mobility Transistors ◽

Reverse Blocking ◽

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Improving performance in single field plate power High Electron Mobility Transistors (HEMTs) based on AlGaN/GaN

10.1109/asqed.2009.5206279 ◽

2009 ◽

Author(s):

Morteza Fathipour ◽

Negin Peyvast ◽

Reza Azadvari

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Field Plate ◽

Electron Mobility Transistors ◽

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Direct observation of trapped charges under field-plate in p-GaN gate AlGaN/GaN high electron mobility transistors by electric field-induced optical second-harmonic generation

Applied Physics Letters ◽

10.1063/1.4977084 ◽

2017 ◽

Vol 110 (9) ◽

pp. 092101 ◽

Author(s):

Takashi Katsuno ◽

Takaaki Manaka ◽

Narumasa Soejima ◽

Mitsumasa Iwamoto

Keyword(s):

Electric Field ◽

Second Harmonic Generation ◽

Harmonic Generation ◽

Electron Mobility ◽

Second Harmonic ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Field Plate ◽

Electron Mobility Transistors

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Very high voltage AlGaN/GaN high electron mobility transistors using a field plate deposited on a stepped insulator

Solid-State Electronics ◽

10.1016/s0038-1101(01)00158-7 ◽

2001 ◽

Vol 45 (9) ◽

pp. 1645-1652 ◽

Author(s):

Shreepad Karmalkar ◽

Umesh K. Mishra

Keyword(s):

High Voltage ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Field Plate ◽

Electron Mobility Transistors ◽

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Enhancement of breakdown voltage in AlGaN/GaN high electron mobility transistors using a field plate

IEEE Transactions on Electron Devices ◽

10.1109/16.936500 ◽

2001 ◽

Vol 48 (8) ◽

pp. 1515-1521 ◽

Author(s):

S. Karmalkar ◽

U.K. Mishra

Keyword(s):

Breakdown Voltage ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Field Plate ◽

Electron Mobility Transistors

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Study on the effects of proton irradiation on the dc characteristics of AlGaN/GaN high electron mobility transistors with source field plate

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.4866401 ◽

2014 ◽

Vol 32 (2) ◽

pp. 022202 ◽

Author(s):

Lu Liu ◽

Ya-Hsi Hwang ◽

Yuyin Xi ◽

Fan Ren ◽

Valentin Craciun ◽

...

Keyword(s):

Electron Mobility ◽

Proton Irradiation ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Field Plate ◽

Electron Mobility Transistors ◽

Dc Characteristics ◽

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New Field Plate Structure for Suppression of Leakage Current of AlGaN/GaN High Electron Mobility Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.2287 ◽

2007 ◽

Vol 46 (4B) ◽

pp. 2287-2290

Author(s):

Young-Hwan Choi ◽

Min-Woo Ha ◽

Jiyong Lim ◽

Min-Koo Han

Keyword(s):

Leakage Current ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Plate Structure ◽

Field Plate ◽

Electron Mobility Transistors

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Improvement of the off-state breakdown voltage with field plate and low-density drain in AlGaN/GaN high-electron mobility transistors

Chinese Physics B ◽

10.1088/1674-1056/24/3/037304 ◽

2015 ◽

Vol 24 (3) ◽

pp. 037304 ◽

Author(s):

Peng Zhang ◽

Sheng-Lei Zhao ◽

Bin Hou ◽

Chong Wang ◽

Xue-Feng Zheng ◽

...

Keyword(s):

Breakdown Voltage ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Low Density ◽

High Electron ◽

High Electron Mobility ◽

Field Plate ◽

Electron Mobility Transistors ◽

State Breakdown

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Analysis of Lags and Current Collapse in Source-Field-Plate AlGaN/GaN High-Electron-Mobility Transistors

Japanese Journal of Applied Physics ◽

10.7567/jjap.52.08jn21 ◽

2013 ◽

Vol 52 (8S) ◽

pp. 08JN21 ◽

Author(s):

Hideyuki Hanawa ◽

Hiraku Onodera ◽

Kazushige Horio

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Field Plate ◽

Electron Mobility Transistors ◽

Current Collapse ◽

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Effect of Source Field Plate on the Characteristics of Off-State, Step-Stressed AlGaN/GaN High Electron Mobility Transistors

ECS Meeting Abstracts ◽

10.1149/ma2011-02/31/2080 ◽

2011 ◽

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Field Plate ◽

Electron Mobility Transistors ◽

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Effect of the Source Field Plate on AlGaN/GaN High Electron Mobility Transistors during Off-State Stress

ECS Transactions ◽

10.1149/1.3629952 ◽

2019 ◽

Vol 41 (6) ◽

pp. 41-49

Author(s):

Lu Liu ◽

Tsung-Sheng Kang ◽

David A. Cullen ◽

Lin Zhou ◽

Jinhyung Kim ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Field Plate ◽

Electron Mobility Transistors ◽

Source Field ◽

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