Current collapse imaging of Schottky gate AlGaN/GaN high electron mobility transistors by electric field-induced optical second-harmonic generation measurement

2014 ◽  
Vol 104 (25) ◽  
pp. 252112 ◽  
Author(s):  
Takashi Katsuno ◽  
Takaaki Manaka ◽  
Tsuyoshi Ishikawa ◽  
Hiroyuki Ueda ◽  
Tsutomu Uesugi ◽  
...  
Keyword(s):  
Electric Field ◽  
Harmonic Generation ◽  
Electron Mobility ◽  
Second Harmonic ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Current Collapse ◽  
Second Harmonic Generation Measurement

Investigation of traps producing current collapse in AlGaN/GaN high electron mobility transistors

2001 ◽  
Vol 37 (10) ◽  
pp. 661 ◽  
Author(s):  
P.B. Klein ◽  
S.C. Binari ◽  
K. Ikossi-Anastasiou ◽  
A.E. Wickenden ◽  
D.D. Koleske ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Current Collapse

Current collapse induced in AlGaN/GaN high-electron-mobility transistors by bias stress

2003 ◽  
Vol 83 (8) ◽  
pp. 1650-1652 ◽  
Author(s):  
J. A. Mittereder ◽  
S. C. Binari ◽  
P. B. Klein ◽  
J. A. Roussos ◽  
D. S. Katzer ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Bias Stress ◽  
Electron Mobility Transistors ◽  
Current Collapse
Sign in / Sign up

Export Citation Format

Share Document