scholarly journals Surface passivation of n-type doped black silicon by atomic-layer-deposited SiO2/Al2O3 stacks

2017 ◽  
Vol 110 (26) ◽  
pp. 263106 ◽  
Author(s):  
B. W. H. van de Loo ◽  
A. Ingenito ◽  
M. A. Verheijen ◽  
O. Isabella ◽  
M. Zeman ◽  
...  
2017 ◽  
Vol 124 ◽  
pp. 282-287 ◽  
Author(s):  
Ismo T.S. Heikkinen ◽  
Päivikki Repo ◽  
Ville Vähänissi ◽  
Toni Pasanen ◽  
Ville Malinen ◽  
...  

2017 ◽  
Vol 124 ◽  
pp. 307-312 ◽  
Author(s):  
Toni Pasanen ◽  
Ville Vähänissi ◽  
Nicholas Theut ◽  
Hele Savin

2013 ◽  
Vol 5 (19) ◽  
pp. 9752-9759 ◽  
Author(s):  
Wei-Cheng Wang ◽  
Che-Wei Lin ◽  
Hsin-Jui Chen ◽  
Che-Wei Chang ◽  
Jhih-Jie Huang ◽  
...  

2021 ◽  
Author(s):  
Ran Zhao ◽  
Kai Zhang ◽  
Jiahao Zhu ◽  
Shuang Xiao ◽  
Wei Xiong ◽  
...  

Interface passivation is of the pivot to achieve high-efficiency organic metal halide perovskite solar cells (PSCs). Atomic layer deposition (ALD) of wide band gap oxides has recently shown great potential...


2015 ◽  
Vol 357 ◽  
pp. 635-642 ◽  
Author(s):  
Jhuma Gope ◽  
Vandana ◽  
Neha Batra ◽  
Jagannath Panigrahi ◽  
Rajbir Singh ◽  
...  

2015 ◽  
Vol 7 (24) ◽  
pp. 13154-13163 ◽  
Author(s):  
B. Ahmed ◽  
Muhammad Shahid ◽  
D. H. Nagaraju ◽  
D. H. Anjum ◽  
Mohamed N. Hedhili ◽  
...  

2013 ◽  
Vol 7 (11) ◽  
pp. 950-954 ◽  
Author(s):  
Päivikki Repo ◽  
Jan Benick ◽  
Guillaume von Gastrow ◽  
Ville Vähänissi ◽  
Friedemann D. Heinz ◽  
...  

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