Stranski–Krastanov InAs/GaAsSb quantum dots coupled with sub-monolayer quantum dot stacks as a promising absorber for intermediate band solar cells

2017 ◽  
Vol 111 (7) ◽  
pp. 073103 ◽  
Author(s):  
Yeongho Kim ◽  
Il-Wook Cho ◽  
Mee-Yi Ryu ◽  
Jun Oh Kim ◽  
Sang Jun Lee ◽  
...  
2012 ◽  
Vol 26 (14) ◽  
pp. 1250090 ◽  
Author(s):  
N. E. GORJI ◽  
M. HOUSHMAND ◽  
S. S. DEHKORDI

The parameter electron filling factor can be taken as a scale for the electronic states in the intermediate band which should be de-localized and thus the unconfined electrons at the quantum dots. For three different value of electron filling factor, the sunlight concentration effect on the efficiency of a quantum dot solar cell is calculated. The maximum point of efficiency and optimum thickness of the cell obtained under three different sunlight concentrations. We show the importance of electron filling factor as a parameter to be more considered. This parameter can be controlled by the quantum dots size and distance between quantum dot layers in the active region. Analysis of above mentioned parameters suggest that to attain a maximum efficiency, the size of the quantum dots and the distance between the periodically arrayed dot layers have to be optimized. In addition, sunlight concentration is recommended as an effective approach to have high efficiency and low cost level solar cells.


2012 ◽  
Vol 111 (7) ◽  
pp. 074305 ◽  
Author(s):  
Yasushi Shoji ◽  
Kohei Narahara ◽  
Hideharu Tanaka ◽  
Takashi Kita ◽  
Katsuhiro Akimoto ◽  
...  

2013 ◽  
Vol 1551 ◽  
pp. 137-142
Author(s):  
Neil S. Beattie ◽  
Guillaume Zoppi ◽  
Ian Farrer ◽  
Patrick See ◽  
Robert W. Miles ◽  
...  

ABSTRACTThe device performance of GaAs p-i-n solar cells containing stacked layers of self-assembled InAs quantum dots is investigated. The solar cells demonstrate enhanced external quantum efficiency below the GaAs band gap relative to a control device without quantum dots. This is attributed to the capture of sub-band gap photons by the quantum dots. Analysis of the current density versus voltage characteristic for the quantum dot solar cell reveals a decrease in the series resistance as the device area is reduce from 0.16 cm2 to 0.01 cm2. This is effect is not observed in control devices and is quantum dot related. Furthermore, low temperature measurements of the open circuit voltage for both quantum dot and control devices provide experimental verification of the conditions required to realise an intermediate band gap solar cell.


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