scholarly journals Detection of local vibrational modes induced by intrinsic defects in undoped BaSi2 light absorber layers using Raman spectroscopy

2018 ◽  
Vol 124 (2) ◽  
pp. 025301 ◽  
Author(s):  
Takuma Sato ◽  
Hirofumi Hoshida ◽  
Ryota Takabe ◽  
Kaoru Toko ◽  
Yoshikazu Terai ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Vibrational Modes ◽  
Intrinsic Defects ◽  
Light Absorber ◽  
Local Vibrational Modes

Influence of the Fermi Energy on Si–H Vibrational Modes in Amorphous and Microcrystalline Silicon

2000 ◽  
Vol 609 ◽  
Author(s):  
N. H. Nickel ◽  
P. Lengsfeld
Keyword(s):  
Raman Spectroscopy ◽  
Hydrogen Bonding ◽  
Structural Change ◽  
Fermi Energy ◽  
Structural Changes ◽  
Vibrational Modes ◽  
Microcrystalline Silicon ◽  
Additional Mode ◽  
Local Vibrational Modes

ABSTRACTThe influence of boron and phosphorous doping and the effect of structural changes on hydrogen bonding in a-Si:H and µc-Si are investigated using Raman spectroscopy. Information on H bonding is obtained from Si-H stretching local vibrational modes (LVM's). In n-type and undoped a-Si:H the LVM's of isolated Si-H near 2000 cm−1 and clustered Si-H around 2100 cm−1 can be clearly distinguished. In heavily B doped a-Si:H, however, the LVM at 2100 cm−1 disappears. A structural change from a-Si:H to µc-Si gives rise to an additional mode centered at 1911 cm−1. Similar LVM's are observed in poly-Si containing platelets.

scholarly journals Engineering of defects in fast neutron irradiated synthetic diamonds

2021 ◽  
Vol 2103 (1) ◽  
pp. 012076
Author(s):  
A A Khomich ◽  
A I Kovalev ◽  
R A Khmelnitsky ◽  
A V Khomich ◽  
A F Popovich ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Ir Absorption ◽  
Vibrational Modes ◽  
Intrinsic Defects ◽  
Small Width ◽  
Synthetic Diamonds ◽  
Ir Absorption Spectra ◽  
Chemical Vapor Deposited ◽  
Vibrational Bands ◽  
Local Vibrational Modes

Abstract Chemical vapor deposited (CVD) diamonds have been irradiated with fast reactor neutrons at fluencies F = 1·1018 and 3 · 1018 cm-2 and then heated at temperatures up to 1600 °C. The processes of annealing in and annealing out of various complexes of intrinsic defects responsible for vibrational and electron-vibrational bands in the IR absorption spectra have been studied in detail. Some tens of local vibrational modes and zero-phonon lines with rather small width caused by numerous complexes of intrinsic defects were observed in the 400-11000 cm-1 range.

scholarly journals Optical Spectroscopy of a Nitrogen-Hydrogen Complex in ZnSe

1993 ◽  
Vol 325 ◽  
Author(s):  
J. A. Wolk ◽  
J. W. Ager ◽  
K. J. Duxstad ◽  
E. E. Haller ◽  
N. R. Taskar ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Vapor Phase ◽  
Vibrational Mode ◽  
Vibrational Modes ◽  
Organic Vapor ◽  
Infrared And Raman Spectroscopy ◽  
Metal Organic ◽  
Polarized Raman Spectroscopy ◽  
Local Vibrational Modes ◽  
Polarized Raman

AbstractWe have observed two local vibrational modes related to H bonded to N acceptors in ZnSe samples grown by metal organic vapor phase epitaxy. The modes have been seen in both infrared and Raman spectroscopy. The new mode seen at 3194 cm-1 is assigned to an N-H stretching vibrational mode and the mode found at 783 cm-1 is tentatively assigned to an N-H wagging vibrational mode. Polarized Raman spectroscopy was used to determine that the symmetry of the defect complex is C3v, which implies that the H atom is in either a bonding or anti-bonding position.

High Energy Local Vibrational Modes of Carbon Aggregates in SiC: Experimental and Theoretical Insight

2006 ◽  
Vol 527-529 ◽  
pp. 465-468 ◽  
Author(s):  
Alexander Mattausch ◽  
M. Bockstedte ◽  
Oleg Pankratov ◽  
John W. Steeds ◽  
S.A. Furkert ◽  
...  
Keyword(s):  
Ab Initio Calculations ◽  
Ab Initio ◽  
High Energy ◽  
Vibrational Modes ◽  
Energy Mode ◽  
Local Vibrational Modes ◽  
Theoretical Insight

We observe new photoluminescence centers in electron-irradiated 6H-SiC with phonon replicas up to 250 meV and clear threefold isotope splitting of the highest energy mode. Based on ab initio calculations, we discuss the tri-carbon anti-site (C3)Si and the di-interstitial (C2)Hex as models for these centers.

Local vibrational modes of H complexes in Mg-doped GaN grown by molecular beam epitaxy

2004 ◽  
Vol 84 (6) ◽  
pp. 897-899 ◽  
Author(s):  
R. Cuscó ◽  
L. Artús ◽  
D. Pastor ◽  
F. B. Naranjo ◽  
E. Calleja
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Vibrational Modes ◽  
Local Vibrational Modes ◽  
Mg Doped
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