Infrared dielectric response, index of refraction, and absorption of germanium-tin alloys with tin contents up to 27% deposited by molecular beam epitaxy

2018 ◽  
Vol 113 (12) ◽  
pp. 122104 ◽  
Author(s):  
Dominic Imbrenda ◽  
Ryan Hickey ◽  
Rigo A. Carrasco ◽  
Nalin S. Fernando ◽  
Jeremy VanDerslice ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Dielectric Response ◽  
Molecular Beam ◽  
Index Of Refraction ◽  
Tin Alloys ◽  
Response Index ◽  
Germanium Tin

Structural Properties of Boron-Doped Germanium-Tin Alloys Grown by Molecular Beam Epitaxy

2014 ◽  
Vol 43 (4) ◽  
pp. 931-937 ◽  
Author(s):  
Nupur Bhargava ◽  
Jay Prakash Gupta ◽  
Thomas Adam ◽  
James Kolodzey
Keyword(s):  
Molecular Beam Epitaxy ◽  
Structural Properties ◽  
Molecular Beam ◽  
Tin Alloys ◽  
Boron Doped ◽  
Germanium Tin

Thermal Stability of Annealed Germanium-Tin Alloys Grown by Molecular Beam Epitaxy

2017 ◽  
Vol 46 (3) ◽  
pp. 1620-1627 ◽  
Author(s):  
Nupur Bhargava ◽  
Jay Prakash Gupta ◽  
Nikolai Faleev ◽  
Leszek Wielunski ◽  
James Kolodzey
Keyword(s):  
Thermal Stability ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Tin Alloys ◽  
Germanium Tin ◽  
Thermal Stability Of

Photoconductivity of germanium tin alloys grown by molecular beam epitaxy

2013 ◽  
Vol 102 (14) ◽  
pp. 141101 ◽  
Author(s):  
Matthew Coppinger ◽  
John Hart ◽  
Nupur Bhargava ◽  
Sangcheol Kim ◽  
James Kolodzey
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Tin Alloys ◽  
Germanium Tin

Heavily Ga-doped Germanium-Tin Alloys by Molecular Beam Epitaxy

2015 ◽  
Author(s):  
W. Wang ◽  
V.R. D'Costa ◽  
S.L. Lim ◽  
Q. Zhou ◽  
E.S. Tok ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Tin Alloys ◽  
Germanium Tin

Determination of the dispersion of the index of refraction and the elastic moduli for molecular-beam-epitaxy-grown Zn1−xBexSe alloys

2001 ◽  
Vol 79 (4) ◽  
pp. 473-475 ◽  
Author(s):  
F. C. Peiris ◽  
U. Bindley ◽  
J. K. Furdyna ◽  
Hyunjung Kim ◽  
A. K. Ramdas ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Elastic Moduli ◽  
Molecular Beam ◽  
Index Of Refraction

Surface morphology of silicon–tin alloys grown by molecular beam epitaxy on Si and Si1−xGex substrates

1996 ◽  
Vol 69 (3) ◽  
pp. 394-396 ◽  
Author(s):  
M. F. Fyhn ◽  
S. Yu. Shiryaev ◽  
J. Lundsgaard Hansen ◽  
A. Nylandsted Larsen
Keyword(s):  
Molecular Beam Epitaxy ◽  
Surface Morphology ◽  
Molecular Beam ◽  
Tin Alloys

Deposition of Tin by Electron Cyclotron Resonance - Metal Organic Molecular Beam Epitaxy

1993 ◽  
Vol 300 ◽  
Author(s):  
P. W. Wisk ◽  
C. R. Abernathy ◽  
S. J. Pearton ◽  
F. Ren ◽  
A. Katz ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Cyclotron Resonance ◽  
Molecular Beam ◽  
Electron Cyclotron Resonance ◽  
Electron Cyclotron ◽  
Index Of Refraction ◽  
Group V ◽  
Si Substrates ◽  
Metal Organic ◽  
Nitrogen Plasmas

ABSTRACTWe have investigated the feasibility of depositing TiN from nitrogen plasmas by Electron Cyclotron Resonance – Metal Organic Molecular Beam Epitaxy (ECR-MOMBE). Growth rate, index of refraction and resistivity were evaluated as a function of growth temperature and group V flow. It was found that TiN could be deposited at reasonable growth rates on either GaAs or Si substrates. However, the resistivity of the materia is quite high, >1700 µΩ-cm, probably because of significant carbon uptake into the layers.

Index of Refraction Anisotropy in InGaAs/InP Heterostructures Measured by Ellipsometry

1989 ◽  
Vol 160 ◽  
Author(s):  
Brian R. Bennett ◽  
Jesús A. Del Alamo
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Index Of Refraction ◽  
Misfit Dislocations ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
X Ray ◽  
Asymmetric Pattern ◽  
Optical Effects

AbstractWe applied ellipsometry to characterize layers of InxGa1-xAs grown by molecular beam epitaxy on (001) InP. Samples with mismatched layers exhibit significant anisotropy in the index of refraction. We explain these observations by the presence of misfit dislocations which form in an asymmetric pattern. This results in asymmetric strain and, via piezo-optical effects, an anisotropy in the optical properties. This effect makes ellipsometry a more sensitive technique than double-crystal x-ray diffraction for detecting misfit dislocations in these heterostructures.

scholarly journals Frequency- and temperature-dependent dielectric response in hybrid molecular beam epitaxy-grown BaSnO3 films

APL Materials ◽  
2018 ◽  
Vol 6 (6) ◽  
pp. 066107 ◽  
Author(s):  
William Nunn ◽  
Abhinav Prakash ◽  
Arghya Bhowmik ◽  
Ryan Haislmaier ◽  
Jin Yue ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Dielectric Response ◽  
Molecular Beam ◽  
Temperature Dependent
Sign in / Sign up

Export Citation Format

Share Document