scholarly journals Suppression of anisotropy and inversion symmetry effects by magnetic charge density points to better motors

AIP Advances ◽  
2019 ◽  
Vol 9 (3) ◽  
pp. 035124
Author(s):  
Anthony S. Arrott ◽  
Terry L. Templeton
AIP Advances ◽  
2018 ◽  
Vol 8 (5) ◽  
pp. 056022 ◽  
Author(s):  
Terry L. Templeton ◽  
Scott D. Hanham ◽  
Anthony S. Arrott

2010 ◽  
Vol 82 (10) ◽  
Author(s):  
E. del Barco ◽  
S. Hill ◽  
C. C. Beedle ◽  
D. N. Hendrickson ◽  
I. S. Tupitsyn ◽  
...  

2009 ◽  
Vol 615-617 ◽  
pp. 797-800 ◽  
Author(s):  
R. Ramakrishna Rao ◽  
Kevin Matocha ◽  
Vinayak Tilak

The mobility of electrons in the inversion layer of 4H-Silicon Carbide (SiC) MOSFETs is lower than the ideal value due to the various scattering mechanisms that takes place at the surface. These scattering mechanisms are strong function of both the interface-trapped charge density and inversion-layer electron density. In this work, we develop a quasi-charge-sheet model to quantify coulomb scattering due to interface trapped-charge in SiC MOSFET inversion layers and calculate the inversion layer electron mobility.


2019 ◽  
Vol 100 (2) ◽  
Author(s):  
A. S. Cameron ◽  
Y. S. Yerin ◽  
Y. V. Tymoshenko ◽  
P. Y. Portnichenko ◽  
A. S. Sukhanov ◽  
...  

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