Fixed-charge generation in SiO2/GaN MOS structures by forming gas annealing and its suppression by controlling Ga-oxide interlayer growth

A recent study has shown that anomalous positive fixed charge is generated at SiO2/GaN interfaces by forming gas annealing (FGA). Here, we conducted systematic physical and electrical characterizations of GaN-based metal-oxide-semiconductor (MOS) structures to gain insight into the charge generation mechanism and to design optimal interface structures. A distinct correlation between the amount of FGA-induced fixed charge and interface oxide growth indicated the physical origins of the fixed charge to be defect formation driven by reduction of the Ga-oxide (GaOx) interlayer. This finding implies that, although post-deposition annealing in oxygen compensates for oxygen deficiencies and FGA passivates defect in GaN MOS structures, excessive interlayer GaOx growth leads to instability in the subsequent FGA treatment. On the basis of this knowledge, SiO2/GaOx/GaN MOS devices with improved electrical properties were fabricated by precisely controlling the interfacial oxide growth while taking advantage of defect passivation with FGA.

High Performance Predictable Quantum Efficient Detector Based on Induced-Junction Photodiodes Passivated with SiO2/SiNx

We performed a systematic study involving simulation and experimental techniques to develop induced-junction silicon photodetectors passivated with thermally grown SiO2 and plasma-enhanced chemical vapor deposited (PECVD) SiNx thin films that show a record high quantum efficiency. We investigated PECVD SiNx passivation and optimized the film deposition conditions to minimize the recombination losses at the silicon–dielectric interface as well as optical losses. Depositions with varied process parameters were carried out on test samples, followed by measurements of minority carrier lifetime, fixed charge density, and optical absorbance and reflectance. Subsequently, the surface recombination velocity, which is the limiting factor for internal quantum deficiency (IQD), was obtained for different film depositions via 2D simulations where the measured effective lifetime, fixed charge density, and substrate parameters were used as input. The quantum deficiency of induced-junction photodiodes that would be fabricated with a surface passivation of given characteristics was then estimated using improved 3D simulation models. A batch of induced-junction photodiodes was fabricated based on the passivation optimizations performed on test samples and predictions of simulations. Photodiodes passivated with PECVD SiNx film as well as with a stack of thermally grown SiO2 and PECVD SiNx films were fabricated. The photodiodes were assembled as light-trap detector with 7-reflections and their efficiency was tested with respect to a reference Predictable Quantum Efficient Detector (PQED) of known external quantum deficiency. The preliminary measurement results show that PQEDs based on our improved photodiodes passivated with stack of SiO2/SiNx have negligible quantum deficiencies with IQDs down to 1 ppm within 30 ppm measurement uncertainty.

Analysis of Fragmentation Pathways of Peptide Modified with Quaternary Ammonium and Phosphonium Group as Ionization Enhancers

Peptide modification by a quaternary ammonium group containing a permanent positive charge is a promising method of increasing the ionization efficiency of the analyzed compounds, making ultra-sensitive detection even at the attomolar level possible. Charge-derivatized peptides may undergo both charge remote (ChR) and charge-directed (ChD) fragmentation. A series of model peptide conjugates derivatized with N,N,N-triethyloammonium (TEA), 1-azoniabicyclo[2.2.2]octane (ABCO), 2,4,6-triphenylopyridinium (TPP) and tris(2,4,6-trimetoxyphenylo)phosphonium (TMPP) groups were analyzed by their fragmentation pathways both in collision-induced dissociation (CID) and electron-capture dissociation (ECD) mode. The effect of the fixed-charge tag type and peptide sequence on the fragmentation pathways was investigated. We found that the aspartic acid effect plays a crucial role in the CID fragmentation of TPP and TEA peptide conjugates whereas it was not resolved for the peptides derivatized with the phosphonium group. ECD spectra are mostly dominated by cn ions. ECD fragmentation of TMPP-modified peptides results in the formation of intense fragments derived from this fixed-charge tag, which may serve as reporter ion.

Rasio Solvabilitas

Rasio solvabilitas atau leverage ratio merupakan rasio yang digunakan untuk mengukur sejauh mana aktiva perusahaan dibiayai dengan utang. Dalam arti luas dikatakan bahwa rasio solvabiliteitunakan untuk mengukur kemampuan perusahaan untuk membayar seluruh kewajibannya, baik jangka pendek maupun jangka panjang apabila perusahaan dibubarkan. Jenis-jenis rasio solvabilitas : debt to asset ratio (debt ratio), debt to equity ratio, long term debt to equity ratio, times interest earned dan fixed charge coverage. Debt to asset ratio (debt ratio) merupakan rasio yang digunakan untuk mengukur perbandingan antara total utang dengan total aktiva.