Quasi-Charge-Sheet Model for Inversion Layer Mobility in 4H-SiC MOSFETs

2009 ◽  
Vol 615-617 ◽  
pp. 797-800 ◽  
Author(s):  
R. Ramakrishna Rao ◽  
Kevin Matocha ◽  
Vinayak Tilak
Keyword(s):  
Silicon Carbide ◽  
Charge Density ◽  
Electron Mobility ◽  
Inversion Layer ◽  
Coulomb Scattering ◽  
Strong Function ◽  
Scattering Mechanisms ◽  
And Inversion ◽  
The Ideal ◽  
Trapped Charge

The mobility of electrons in the inversion layer of 4H-Silicon Carbide (SiC) MOSFETs is lower than the ideal value due to the various scattering mechanisms that takes place at the surface. These scattering mechanisms are strong function of both the interface-trapped charge density and inversion-layer electron density. In this work, we develop a quasi-charge-sheet model to quantify coulomb scattering due to interface trapped-charge in SiC MOSFET inversion layers and calculate the inversion layer electron mobility.

Trap and Inversion Layer Mobility Characterization Using Hall Effect in Silicon Carbide-Based MOSFETs With Gate Oxides Grown by Sodium Enhanced Oxidation

2009 ◽  
Vol 56 (2) ◽  
pp. 162-169 ◽  
Author(s):  
Vinayak Tilak ◽  
Kevin Matocha ◽  
Greg Dunne ◽  
Fredrik Allerstam ◽  
Einar Ö. Sveinbjornsson
Keyword(s):  
Silicon Carbide ◽  
Hall Effect ◽  
Inversion Layer ◽  
Gate Oxides ◽  
Enhanced Oxidation ◽  
And Inversion

scholarly journals Monte Carlo simulations of electron transport in 4H-SiC using the DFT-calculated density of states

2021 ◽  
Author(s):  
Janusz Wozny ◽  
Andrii Kovalchuk ◽  
Zbigniew Lisik ◽  
Jacek Podgorski ◽  
Piotr Bugalski ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Monte Carlo ◽  
Electron Transport ◽  
Monte Carlo Simulations ◽  
Electric Fields ◽  
Density Of States ◽  
Electron Mobility ◽  
Crucial Issue ◽  
Calculated Density ◽  
Correct Calculation

AbstractWe carry out Monte Carlo simulations of electron transport in 4H-silicon carbide (4H-SiC) based on the numerically calculated density of states (DOS) to obtain the electron mobility at low electric fields. From the results, it can be concluded that a correct calculation of the DOS requires a very dense wavevector k-mesh when low electron kinetic energies are considered. The crucial issue is the numerical efficiency of the DOS calculation. We investigate the scaling efficiency when different numbers of cores are used.

Formation of dense silicon carbide by liquid silicon infiltration of carbon with engineered structure

2008 ◽  
Vol 23 (5) ◽  
pp. 1237-1248 ◽  
Author(s):  
Jesse C. Margiotta ◽  
Dajie Zhang ◽  
Dennis C. Nagle ◽  
Caitlin E. Feeser
Keyword(s):  
Silicon Carbide ◽  
Bulk Density ◽  
Phenolic Resin ◽  
Pore Diameter ◽  
Chemical Reactivity ◽  
Liquid Silicon ◽  
Crystalline Cellulose ◽  
Carbon Preform ◽  
Median Pore ◽  
The Ideal

Fully dense and net-shaped silicon carbide monoliths were produced by liquid silicon infiltration of carbon preforms with engineered bulk density, median pore diameter, and chemical reactivity derived from carbonization of crystalline cellulose and phenolic resin blends. The ideal carbon bulk density and minimum median pore diameter for successful formation of fully dense silicon carbide by liquid silicon infiltration are 0.964 g cm−3 and approximately 1 μm. By blending crystalline cellulose and phenolic resin in various mass ratios as carbon precursors, we were able to adjust the bulk density, median pore diameter, and overall chemical reactivity of the carbon preforms produced. The liquid silicon infiltration reactions were performed in a graphite element furnace at temperatures between 1414 and 1900 °C and under argon pressures of 1550, 760, and 0.5 Torr for periods of 10, 15, 30, 60, 120, and 300 min. Examination of the results indicated that the ideal carbon preform was produced from the crystalline cellulose and phenolic resin blend of 6:4 mass ratio. This carbon preform has a bulk density of 0.7910 g cm−3, an actual density of 2.1911 g cm−3, median pore diameter of 1.45 μm, and specific surface area of 644.75 m2 g−1. The ideal liquid silicon infiltration reaction conditions were identified as 1800 °C, 0.5 Torr, and 120 min. The optimum reaction product has a bulk density of 2.9566 g cm−3, greater than 91% of that of pure β–SiC, with a β–SiC volume fraction of approximately 82.5%.

scholarly journals A comparative study of hole and electron inversion layer quantization in MOS structures

2010 ◽  
Vol 7 (2) ◽  
pp. 185-193 ◽  
Author(s):  
Amit Chaudhry ◽  
Nath Roy
Keyword(s):  
Charge Density ◽  
Marked Decrease ◽  
Inversion Layer ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Gate Capacitance ◽  
Variation Approach ◽  
Inversion Charge ◽  
Mos Structures ◽  
Good Agreement

In this paper, an analytical model has been developed to study inversion layer quantization in nanoscale Metal Oxide Semiconductor Field Effect Oxide p-(MOSFET). n-MOSFETs have been studied using the variation approach and the p-MOSFETs have been studied using the triangular well approach. The inversion charge density and gate capacitance analysis for both types of transistors has been done. There is a marked decrease in the inversion charge density and the capacitance of the p-MOSFET as compared to n-MOSFETs. The results are compared with the numerical results showing good agreement.

High Voltage Silicon Carbide Devices

1998 ◽  
Vol 512 ◽  
Author(s):  
B. Jayant Baliga
Keyword(s):  
Silicon Carbide ◽  
Breakdown Voltage ◽  
High Voltage ◽  
Impact Ionization ◽  
Voltage Drop ◽  
Schottky Diodes ◽  
Inversion Layer ◽  
Drift Region ◽  
Edge Termination ◽  
Silicon Devices

ABSTRACTProgress made in the development of high performance power rectifiers and switches from silicon carbide are reviewed with emphasis on approaching the 100-fold reduction in the specific on-resistance of the drift region when compared with silicon devices with the same breakdown voltage. The highlights are: (a) Recently completed measurements of impact ionization coefficients in SiC indicate an even higher Baliga's figure of merit than projected earlier. (b) The commonly reported negative temperature co-efficient for breakdown voltage in SiC devices has been shown to arise at defects, allaying concerns that this may be intrinsic to the material. (c) Based upon fundamental considerations, it has been found that Schottky rectifiers offer superior on-state voltage drop than P-i-N rectifiers for reverse blocking voltages below 3000 volts. (d) Nearly ideal breakdown voltage has been experimentally obtained for Schottky diodes using an argon implanted edge termination. (e) Planar ion-implanted junctions have been successfully fabricated using oxide as a mask with high breakdown voltage and low leakage currents by using a filed plate edge termination. (f) High inversion layer mobility has been experimentally demonstrated on both 6H and 4H-SiC by using a deposited oxide layer as gate dielectric. (g) A novel, high-voltage, normally-off, accumulation-channel, MOSFET has been proposed and demonstrated with 50x lower specific on-resistance than silicon devices in spite of using logic-level gate drive voltages. These results indicate that SiC based power devices could become commercially viable in the 21st century if cost barriers can be overcome.

A Monte Carlo study on electron mobility in quantized cubic silicon carbide inversion layers

1997 ◽  
Vol 81 (10) ◽  
pp. 6857-6865 ◽  
Author(s):  
F. Gámiz ◽  
J. B. Roldán ◽  
J. A. López-Villanueva
Keyword(s):  
Silicon Carbide ◽  
Monte Carlo ◽  
Electron Mobility ◽  
Monte Carlo Study ◽  
Cubic Silicon Carbide
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