Electronic states and interband tunneling conditions in type-II quantum well heterostructures

2020 ◽  
Vol 127 (2) ◽  
pp. 025705
Author(s):  
Rui Q. Yang
Keyword(s):  
Quantum Well ◽  
Electronic States ◽  
Type Ii ◽  
Interband Tunneling

Type-I and type-II interband transitions in CdSe/ZnTe quantum well structures

1998 ◽  
Vol 108 (4) ◽  
pp. 205-209 ◽  
Author(s):  
J Haetty ◽  
E.H Lee ◽  
H Luo ◽  
A Petrou ◽  
J Warnock
Keyword(s):  
Quantum Well ◽  
Type I ◽  
Type Ii ◽  
Interband Transitions ◽  
Quantum Well Structures

SPACE-CHARGE SPECTROSCOPY OF ELECTRONIC STATES IN Ge/Si QUANTUM DOTS WITH TYPE-II BAND ALIGNMENT

2007 ◽  
Vol 06 (05) ◽  
pp. 353-356
Author(s):  
A. I. YAKIMOV ◽  
A. V. DVURECHENSKII ◽  
A. I. NIKIFOROV ◽  
A. A. BLOSHKIN
Keyword(s):  
Quantum Dots ◽  
Electronic Structure ◽  
Binding Energy ◽  
Space Charge ◽  
Tensile Strain ◽  
Electronic States ◽  
Band Alignment ◽  
Type Ii ◽  
Electron Confinement ◽  
Si Quantum Dots

Space-charge spectroscopy was employed to study electronic structure in a stack of four layers of Ge quantum dots coherently embedded in an n-type Si (001) matrix. Evidence for an electron confinement in the vicinity of Ge dots was found. From the frequency-dependent measurements the electron binding energy was determined to be ~50 meV, which is consistent with the results of numerical analysis. The data are explained by a modification of the conduction band alignment induced by inhomogeneous tensile strain in Si around the buried Ge dots.

Electron-phonon interaction and electron mobility in quantum-well type-II PbTe/PbS structures

1998 ◽  
Vol 32 (6) ◽  
pp. 665-667
Author(s):  
V. V. Bondarenko ◽  
V. V. Zabudskii ◽  
F. F. Sizov
Keyword(s):  
Quantum Well ◽  
Electron Mobility ◽  
Type Ii ◽  
Phonon Interaction ◽  
Electron Phonon Interaction

(In)GaAsN-based type-II “W” quantum-well lasers for emission at λ=1.55 μm

2003 ◽  
Vol 83 (14) ◽  
pp. 2742-2744 ◽  
Author(s):  
I. Vurgaftman ◽  
J. R. Meyer ◽  
N. Tansu ◽  
L. J. Mawst
Keyword(s):  
Quantum Well ◽  
Quantum Well Lasers ◽  
Type Ii

scholarly journals Type II narrow double barrier quantum well structures : Γ-X coupling and interface effects

1993 ◽  
Vol 03 (C5) ◽  
pp. 225-228
Author(s):  
B. CHASTAINGT ◽  
G. NEU ◽  
C. DEPARIS ◽  
J. MASSIES ◽  
J. MARTINEZ-PASTOR ◽  
...  
Keyword(s):  
Quantum Well ◽  
Type Ii ◽  
Double Barrier ◽  
Quantum Well Structures ◽  
Interface Effects

Photoluminescence decay time studies of type‐II GaAs/AlAs quantum well structures

1989 ◽  
Vol 66 (11) ◽  
pp. 5639-5641 ◽  
Author(s):  
M. D. Sturge ◽  
Janet L. Mackay ◽  
Colette Maloney ◽  
J.K. Pribram
Keyword(s):  
Quantum Well ◽  
Decay Time ◽  
Type Ii ◽  
Quantum Well Structures ◽  
Photoluminescence Decay

Electronic States in Cd1−xZnxTe/CdTe Strained Layer Coupled Double Quantum Wells and their Photoluminescence

1994 ◽  
Vol 358 ◽  
Author(s):  
Tiesheng Li ◽  
H. J. Lozykowski
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Lattice Mismatch ◽  
Electronic States ◽  
Double Quantum ◽  
Strain Effect ◽  
Strained Layer ◽  
Quantum Well Structure ◽  
Double Quantum Well ◽  
Theoretical Investigations

ABSTRACTExperimental and theoretical investigations of electronic states in a strained-layer CdTe/CdZnTe coupled double quantum well structure are presented. The optical properties of this lattice mismatched heterostructure were characterized by photoluminescence (PL), PL excitation and polarization spectroscopies. The influence of electrical field on exciton states in the strained layer CdTe/CdZnTe coupled double quantum well structure is experimentally studied. The confined electronic states were calculated in the framework of the envelope function approach, taking into account the strain effect induced by the lattice-mismatch. Experimental results are compared with the calculated transition energies.

Sign in / Sign up

Export Citation Format

Share Document