Room‐temperature photoluminescence times in a GaAs/AlxGa1−xAs molecular beam epitaxy multiple quantum well structure

1985 ◽  
Vol 46 (3) ◽  
pp. 280-282 ◽  
Author(s):  
J. E. Fouquet ◽  
A. E. Siegman
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Room Temperature ◽  
Molecular Beam ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Room Temperature Photoluminescence ◽  
Quantum Well Structure

Above-room-temperature photoluminescence from a strain-compensated Ge/Si0.15Ge0.85 multiple-quantum-well structure

2012 ◽  
Vol 100 (14) ◽  
pp. 141905 ◽  
Author(s):  
P. H. Wu ◽  
D. Dumcenco ◽  
Y. S. Huang ◽  
H. P. Hsu ◽  
C. H. Lai ◽  
...  
Keyword(s):  
Quantum Well ◽  
Room Temperature ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Room Temperature Photoluminescence ◽  
Quantum Well Structure

scholarly journals InGaAs/GaAs1-ySby Type II Multiple Quantum Well Structure by Molecular Beam Epitaxy.

Shinku ◽  
2001 ◽  
Vol 44 (3) ◽  
pp. 191-194
Author(s):  
Masato FUJIMOTO ◽  
Yuichi KAWAMURA ◽  
Hideaki HARADA ◽  
Atsushi KONDO ◽  
Toshio HIGASINO ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Type Ii ◽  
Quantum Well Structure
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