Improved recombination lifetime of photoexcited carriers in GaAs single quantum well heterostructures confined by GaAs/AlAs short‐period superlattices

1986 ◽  
Vol 49 (18) ◽  
pp. 1193-1195 ◽  
Author(s):  
K. Fujiwara ◽  
A. Nakamura ◽  
Y. Tokuda ◽  
T. Nakayama ◽  
M. Hirai
Keyword(s):  
Quantum Well ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Recombination Lifetime ◽  
Short Period ◽  
Short Period Superlattices

Radiative recombination lifetime measurements of InGaN single quantum well

1996 ◽  
Vol 69 (13) ◽  
pp. 1936-1938 ◽  
Author(s):  
C.‐K. Sun ◽  
S. Keller ◽  
G. Wang ◽  
M. S. Minsky ◽  
J. E. Bowers ◽  
...  
Keyword(s):  
Quantum Well ◽  
Radiative Recombination ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Lifetime Measurements ◽  
Recombination Lifetime

(InAs)1/(GaAs)n Superlattice Quantum Well Lasers

1992 ◽  
Vol 281 ◽  
Author(s):  
J. Lopata ◽  
N. K. Dutta ◽  
Naresh chand
Keyword(s):  
Low Temperature ◽  
Active Region ◽  
Quantum Well ◽  
Fiber Amplifiers ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Strained Layer ◽  
Short Period ◽  
Erbium Doped ◽  
Random Alloy

Strained layer In0.2Ga0.8As/GaAs quantum-well (QW) lasers have been used to pump Erbium Doped Fiber Amplifiers for use in opto-electronic communication systems. These InGaAs/GaAs Q-W lasers grown as graded index separate confinement heterostructures (GRINSCH) emit at 980 nm and have exhibited low threshold current densities, high electrical to optical power conversion efficiencies, low noise, and low temperature sensitivities [1–3]. Recently there has been much attention toward the growth and fabrication of devices containing short period superlattices of (InAs)m/(GaAs)m or (GaAs)m/(AlAs)n compositions [4–9]. Indeed the growth of inverted MODFET structures using a (GaAs)/(AlAs) superlattice barrier in place of an AlGaAs random alloy exhibited an increase in low temperature mobility due to reductions in the number of impurities and interface roughness [7]]. Can the optical properties of strained layer InGaAs/GaAs Q-W lasers also be improved by growing an (InAs)/(GaAs)4 short period superlattice as the active layer in place of the In0.2Ga0.8 As random alloy?This paper reports the fabrication of ridge waveguide lasers using a 6 period (InAs)1/(GaAs)4 superlattice active region in a GRINSCH laser structure. One period of the superlattice consists of 1 monolayer (ML) of InAs and 4 ML of GaAs. Thus the average In composition in the superlattice is 20%. This superlattice laser is an alternative to the In0.2Ga0.8As/GaAs random alloy quantum-well laser used as a pump source for Erbium Doped Fiber Amplifiers. In a single quantum well In0.2Ga0.8As/GaAs laser the active region is a thin layer (-70Å thick) sandwiched between GaAs barrier layers. The superlattice active laser reported here has 6 periods of (InAs)1/(GaAs)4 as the light emitting region of a total width comparable to a single quantum well of random alloy composition.

The performances of (InAs)/sub 1//(GaAs)/sub 2/ short-period superlattice strained single-quantum-well laser on GaAs substrate

1994 ◽  
Vol 30 (4) ◽  
pp. 909-912 ◽  
Author(s):  
H. Kurakake ◽  
T. Uchida ◽  
S. Kubota ◽  
H. Soda ◽  
S. Yamazaki
Keyword(s):  
Quantum Well ◽  
Gaas Substrate ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Laser ◽  
Short Period

Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice

2011 ◽  
Vol 315 (1) ◽  
pp. 267-271 ◽  
Author(s):  
W.V. Lundin ◽  
A.E. Nikolaev ◽  
A.V. Sakharov ◽  
E.E. Zavarin ◽  
G.A. Valkovskiy ◽  
...  
Keyword(s):  
Quantum Well ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Short Period ◽  
Deep Green ◽  
Green Leds

Piezoelectric photo-thermal study of GaAs single-quantum well embedded in GaAs/AlAs short-period superlattlices

2008 ◽  
Vol 33 (2) ◽  
pp. 304-308
Author(s):  
P. Wang ◽  
T. Nakagawa ◽  
A. Fukuyama ◽  
Y. Akashi ◽  
K. Fujiwara ◽  
...  
Keyword(s):  
Quantum Well ◽  
Thermal Study ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Short Period

Visible AlGaAs single quantum well lasers with low threshold current density grown by molecular beam epitaxy

1988 ◽  
Vol 24 (9) ◽  
pp. 537
Author(s):  
B. Saint-Cricq ◽  
F. Chatenoud ◽  
F. Lozes-Dupuy ◽  
S. Fourtine ◽  
H. Martinot
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Current Density ◽  
Molecular Beam ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Quantum Well Lasers ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Low Threshold

(InAs)1/(GaAs)2short period superlattice strained single quantum well laser on GaAs substrate

1993 ◽  
Vol 29 (1) ◽  
pp. 98-99 ◽  
Author(s):  
H. Kurakake ◽  
T. Uchida ◽  
H. Soda ◽  
S. Yamazaki
Keyword(s):  
Quantum Well ◽  
Gaas Substrate ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Laser

Thermal quenching of extrinsic photoluminescence of GaAs-Ga1-x Al x As single quantum well

1988 ◽  
Vol 10 (10) ◽  
pp. 1243-1248 ◽  
Author(s):  
Y. Chen ◽  
A. Hameury ◽  
J. Massies ◽  
C. Neri
Keyword(s):  
Quantum Well ◽  
Thermal Quenching ◽  
Single Quantum ◽  
Single Quantum Well
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