InGaAsP multiple quantum well lasers with planar buried heterostructure prepared by metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.99547 ◽

1988 ◽

Vol 52 (25) ◽

pp. 2099-2101 ◽

Author(s):

H. Ishiguro ◽

T. Kawabata ◽

S. Koike

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Well ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Multiple Quantum Well ◽

Chemical Vapor ◽

Quantum Well Lasers ◽

Multiple Quantum ◽

Buried Heterostructure ◽

Metalorganic Chemical

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Influence of oxygen on the threshold current of AlGaAs multiple quantum well lasers grown by metalorganic chemical vapor deposition

Journal of Crystal Growth ◽

10.1016/0022-0248(94)90087-6 ◽

1994 ◽

Vol 141 (1-2) ◽

pp. 22-28 ◽

Author(s):

Y. Mihashi ◽

M. Miyashita ◽

N. Kaneno ◽

M. Tsugami ◽

N. Fujii ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Well ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Multiple Quantum Well ◽

Chemical Vapor ◽

Threshold Current ◽

Quantum Well Lasers ◽

Multiple Quantum ◽

Metalorganic Chemical

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650-nm AlGaInP multiple-quantum-well lasers grown by metalorganic chemical vapor deposition using tertiarybutylphosphine

Applied Physics Letters ◽

10.1063/1.1593782 ◽

2003 ◽

Vol 83 (4) ◽

pp. 596-598 ◽

Author(s):

Jian-Rong Dong ◽

Jing-Hua Teng ◽

Soo-Jin Chua ◽

Boon-Chin Foo ◽

Yan-Jun Wang ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Well ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Multiple Quantum Well ◽

Chemical Vapor ◽

Quantum Well Lasers ◽

Multiple Quantum ◽

Metalorganic Chemical

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Inversion by metalorganic chemical vapor deposition from N- to Ga-polar gallium nitride and its application to multiple quantum well light-emitting diodes

Applied Physics Letters ◽

10.1063/1.4841755 ◽

2013 ◽

Vol 103 (23) ◽

pp. 231108 ◽

Author(s):

A. M. Hosalli ◽

D. M. Van Den Broeck ◽

D. Bharrat ◽

N. A. El-Masry ◽

S. M. Bedair

Keyword(s):

Gallium Nitride ◽

Chemical Vapor Deposition ◽

Quantum Well ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Multiple Quantum Well ◽

Chemical Vapor ◽

Multiple Quantum ◽

Light Emitting ◽

Metalorganic Chemical

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Analysis of the in-plane bandgap distribution in selectively grown InGaAs/InGaAsP multiple quantum well by low pressure metalorganic chemical vapor deposition

Journal of Crystal Growth ◽

10.1016/0022-0248(94)91060-x ◽

1994 ◽

Vol 145 (1-4) ◽

pp. 256-262 ◽

Author(s):

T. Itagaki ◽

T. Kimura ◽

K. Goto ◽

Y. Mihashi ◽

S. Takamiya ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Well ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Multiple Quantum Well ◽

Chemical Vapor ◽

Low Pressure ◽

Multiple Quantum ◽

Metalorganic Chemical

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GaInNAs/GaAs Multiple-Quantum-Well Grown by Metalorganic Chemical Vapor Deposition Using Nitrogen Carrier Gas

Japanese Journal of Applied Physics ◽

10.1143/jjap.42.1511 ◽

2003 ◽

Vol 42 (Part 1, No. 4A) ◽

pp. 1511-1513 ◽

Author(s):

Tetsuo Nishida ◽

Mitsuru Takaya ◽

Takeo Kaneko ◽

Tatsuya Shimoda

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Well ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Multiple Quantum Well ◽

Chemical Vapor ◽

Multiple Quantum ◽

Carrier Gas ◽

Metalorganic Chemical

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High Al-Content Visible (AlGa)As Multiple Quantum Well Heterostructure Lasers Grown by Metalorganic Chemical Vapor Deposition

Japanese Journal of Applied Physics ◽

10.1143/jjap.22.l727 ◽

1983 ◽

Vol 22 (Part 2, No. 11) ◽

pp. L727-L729 ◽

Author(s):

Hiroji Kawai ◽

Osamu Matsuda ◽

Kunio Kaneko

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Well ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Multiple Quantum Well ◽

Chemical Vapor ◽

Multiple Quantum ◽

High Al Content ◽

Metalorganic Chemical

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Photoluminescence dynamics and structural investigation of InGaN/GaN multiple quantum well light emitting diodes grown by metalorganic chemical vapor deposition

10.1117/12.741718 ◽

2007 ◽

Author(s):

Z. S. Lee ◽

Z. C. Feng ◽

A. G. Li ◽

H. L. Tsai ◽

J. R. Yang ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Well ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Structural Investigation ◽

Multiple Quantum Well ◽

Chemical Vapor ◽

Multiple Quantum ◽

Light Emitting ◽

Metalorganic Chemical

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Continuous room‐temperature multiple‐quantum‐well AlxGa1−xAs‐GaAs injection lasers grown by metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.91206 ◽

1979 ◽

Vol 35 (7) ◽

pp. 487-489 ◽

Author(s):

R. D. Dupuis ◽

P. D. Dapkus ◽

N. Holonyak ◽

R. M. Kolbas

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Well ◽

Vapor Deposition ◽

Room Temperature ◽

Metalorganic Chemical Vapor Deposition ◽

Multiple Quantum Well ◽

Chemical Vapor ◽

Multiple Quantum ◽

Injection Lasers ◽

Metalorganic Chemical

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Influence of growth parameters on the properties of InGaN/GaN multiple quantum well grown by metalorganic chemical vapor deposition

Current Applied Physics ◽

10.1016/j.cap.2006.10.008 ◽

2007 ◽

Vol 7 (5) ◽

pp. 469-473 ◽

Author(s):

T.K. Kim ◽

S.K. Shim ◽

S.S. Yang ◽

J.K. Son ◽

Y.K. Hong ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Well ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Growth Parameters ◽

Multiple Quantum Well ◽

Chemical Vapor ◽

Multiple Quantum ◽

Metalorganic Chemical

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Correlations between In composition and tertiarybutylarsine (TBAs) flow rate in InGaNAs/GaN multiple quantum well by metalorganic chemical vapor deposition

2003 International Symposium on Compound Semiconductors ISCS-03 ◽

10.1109/iscs.2003.1239918 ◽

2004 ◽

Author(s):

Hyunseok Na ◽

Hyun Jin Kim ◽

Soon-Yong Kwon ◽

Euijoon Yoon ◽

Cheolsoo Sone ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Well ◽

Flow Rate ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Multiple Quantum Well ◽

Chemical Vapor ◽

Multiple Quantum ◽

Metalorganic Chemical

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