scholarly journals Ultrathin 2D-oxides: A perspective on fabrication, structure, defect, transport, electron, and phonon properties

2021 ◽  
Vol 129 (22) ◽  
pp. 220903
Author(s):  
Santosh Kumar Radha ◽  
Kyle Crowley ◽  
Brian A. Holler ◽  
Xuan P. A. Gao ◽  
Walter R. L. Lambrecht ◽  
...  
Keyword(s):  
Structure Defect ◽  
Phonon Properties

Phonon properties of Thue-Morse superlattices

1998 ◽  
Vol 245 (5) ◽  
pp. 483-488 ◽  
Author(s):  
F.M. Pan ◽  
Z.K. Jiao ◽  
G.J. Jin ◽  
A. Hu ◽  
S.S. Jiang
Keyword(s):  
Phonon Properties

Phonon Decay in GaN and AlN and Self-Heating in III-N Devices

2006 ◽  
Vol 955 ◽  
Author(s):  
Mark Holtz ◽  
D. Y. Song ◽  
S. A. Nikishin ◽  
V. Soukhoveev ◽  
A. Usikov ◽  
...  
Keyword(s):  
Thermal Expansion ◽  
Temperature Dependence ◽  
High Quality ◽  
Self Heating ◽  
Phonon Emission ◽  
Decay Properties ◽  
Phonon Properties

ABSTRACTWe report studies of the temperature dependence of Raman lines in high quality GaN and AlN. The temperature dependence of the phonon energies and linewidths are used to produce consistent phonon decay properties of zone center optic phonons. In GaN we observe the E22 phonon to decay into three phonons, while the A1(LO) phonon is well described according to the so-called Ridley process – one TO and one LA phonon. For AlN the E22 phonon decays by two phonon emission and the A1(LO) line also exhibits a dependence consistent with the Ridley process. Along with the phonon decay processes, it is important in each case to take into account the contribution of the thermal expansion, including the temperature dependence, to describe observed temperature shifts in the phonon properties.

Improvement of the Thermal Conductivity in 4H-SiC Epitaxial Layer by Introducing Gettering Sites

2008 ◽  
Vol 600-603 ◽  
pp. 525-528
Author(s):  
Laurent Ottaviani ◽  
Michel Kazan ◽  
Pierre M. Masri ◽  
Thierry Sauvage
Keyword(s):  
Thermal Conductivity ◽  
Epitaxial Layer ◽  
Active Area ◽  
Specific Process ◽  
Metal Impurities ◽  
Silicon Based ◽  
Phonon Properties

Metal impurities are known to degrade dramatically the performances of silicon-based devices, even at concentrations as low as 1012 cm-3. A specific process, named proximity gettering, has been optimised by some authors in order to reduce the influence of these impurities [1]. This process consists in the building of a favourable impurity trapping zone in a non-active area of the device, by introducing implantation defects. This paper reports on the application of introducing such gettering sites as an approach to control phonon properties in 4H-SiC epilayer, and increase the thermal conductivity.

Electronic, elastic and phonon properties of the rock-salt LaSb and YSb

2007 ◽  
Vol 19 (15) ◽  
pp. 156207 ◽  
Author(s):  
H M Tütüncü ◽  
S Bagci ◽  
G P Srivastava
Keyword(s):  
Rock Salt ◽  
Phonon Properties

Optical Transitions via the Structure-Defect Levels Due to Lattice Vacancies in InSb

1991 ◽  
Vol 30 (Part 1, No. 6) ◽  
pp. 1169-1175 ◽  
Author(s):  
Jun-Yuan Chen ◽  
Jenn-Gee Lo ◽  
Luke Su Lu
Keyword(s):  
Structure Defect ◽  
Optical Transitions ◽  
Defect Levels ◽  
Lattice Vacancies
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