Optical Transitions via the Structure-Defect Levels Due to Lattice Vacancies in InSb

Japanese Journal of Applied Physics ◽

10.1143/jjap.30.1169 ◽

1991 ◽

Vol 30 (Part 1, No. 6) ◽

pp. 1169-1175 ◽

Author(s):

Jun-Yuan Chen ◽

Jenn-Gee Lo ◽

Luke Su Lu

Keyword(s):

Structure Defect ◽

Optical Transitions ◽

Defect Levels ◽

Lattice Vacancies

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Solution-grown near-stoichiometry Cu2ZnSnS4 films: Optical transitions and defect levels

Journal of Alloys and Compounds ◽

10.1016/j.jallcom.2016.03.035 ◽

2016 ◽

Vol 675 ◽

pp. 387-392 ◽

Author(s):

A.E. Rakhshani

Keyword(s):

Optical Transitions ◽

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Optical transitions in D4h Copper chloride complexes : AN MS-Xα investigation

Journal de Chimie Physique ◽

10.1051/jcp/1989860872 ◽

1989 ◽

Vol 86 ◽

pp. 872-879 ◽

Author(s):

J. A. Aramburu ◽

M. Moreno

Keyword(s):

Copper Chloride ◽

Optical Transitions ◽

Chloride Complexes

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OPTICAL TRANSITIONS BETWEEN SPIN-POLARIZED BANDS IN MAGNETIC CHROMIUM SPINELS

Le Journal de Physique Colloques ◽

10.1051/jphyscol:19711333 ◽

1971 ◽

Vol 32 (C1) ◽

pp. C1-932-C1-933 ◽

Author(s):

H. W. LEHMANN ◽

G. HARBEKE ◽

H. PINCH

Keyword(s):

Optical Transitions ◽

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VOLUME DEPENDENCE OF OPTICAL TRANSITIONS IN GaAs : PHOTOMODULATED REFLECTIVITY

Le Journal de Physique Colloques ◽

10.1051/jphyscol:1984811 ◽

1984 ◽

Vol 45 (C8) ◽

pp. C8-57-C8-60 ◽

Author(s):

M. Hanfland ◽

K. Syassen ◽

N. E. Christensen

Keyword(s):

Optical Transitions ◽

Volume Dependence

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OPTICAL TRANSITIONS WITH CHARGE TRANSFER IN SUPRAMOLECULAR FULLERENE AND PORPHYRIN COMPOUNDS IN THE CRYSTALLINE STATE

Журнал структурной химии ◽

10.15372/jsc20160402 ◽

2016 ◽

Keyword(s):

Charge Transfer ◽

Crystalline State ◽

Optical Transitions

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Hydrogen passivation of defect levels in the annealed CdZnTe:In crystals

Journal of Materials Research ◽

10.1557/jmr.2020.289 ◽

2020 ◽

Vol 35 (22) ◽

pp. 3041-3047

Author(s):

Lingyan Xu ◽

Yan Zhou ◽

Xu Fu ◽

Lu Liang ◽

Wanqi Jie

Keyword(s):

Hydrogen Passivation ◽

Abstract

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Erratum: “Optical transitions and energy relaxation of hot carriers in Si nanocrystals” [Appl. Phys. Lett. 97, 231116 (2010)]

Applied Physics Letters ◽

10.1063/1.4803012 ◽

2013 ◽

Vol 102 (16) ◽

pp. 169903 ◽

Author(s):

A. N. Poddubny ◽

A. A. Prokofiev ◽

I. N. Yassievich

Keyword(s):

Energy Relaxation ◽

Optical Transitions ◽

Hot Carriers ◽

Si Nanocrystals

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Locating impurity and defect levels in the host band gap by first-principles calculations: Pure and Ce3+-doped YAlO3

Optical Materials ◽

10.1016/j.optmat.2021.110843 ◽

2021 ◽

Vol 113 ◽

pp. 110843

Author(s):

M.G. Brik ◽

C.-G. Ma ◽

M. Piasecki ◽

A. Suchocki

Keyword(s):

Band Gap ◽

First Principles ◽

First Principles Calculations ◽

Impurity And Defect Levels ◽

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Effects of thermal emission and re-trapping of photo-injected carriers on the optical transitions of InAs/GaAs quantum dots

Materials Science and Engineering B ◽

10.1016/j.mseb.2021.115238 ◽

2021 ◽

Vol 271 ◽

pp. 115238

Author(s):

Rihani Jawher ◽

Radhwen Chtourou ◽

Vincent Sallet ◽

Mehrez Oueslati

Keyword(s):

Quantum Dots ◽

Thermal Emission ◽

Optical Transitions

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Field Effect on Crystal Phase of Silicon in Si/CeO2/SiO2Structure

Journal of Nanomaterials ◽

10.1155/2008/712985 ◽

2008 ◽

Vol 2008 ◽

pp. 1-4

Author(s):

Dmitry E. Milovzorov

Keyword(s):

Electronic Structure ◽

Spatial Distribution ◽

Band Gap ◽

Buffer Layer ◽

Field Effect ◽

Cerium Dioxide ◽

Silicon Film ◽

Crystal Phase ◽

The structural, optical, and conductivity properties of silicon film deposited on cerium dioxide buffer layer were studied. The electronic structure of system consists of various defect levels inside band gap. The temperature spatial distribution plays a great role in silicon crystallization. The field destruction of crystal phase and its restoration, after annealing, were investigated.

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