Impact of conductivity type change in InAs/GaSb superlattice on low frequency noise of photoconductive long-wavelength infrared detectors

2021 ◽  
Vol 118 (26) ◽  
pp. 263501
Author(s):  
Łukasz Ciura ◽  
Agata Jasik ◽  
Krzysztof Czuba

2021 ◽  
Author(s):  
Liang Wang ◽  
Liqi Zhu ◽  
Zhicheng Xu ◽  
Fangfang Wang ◽  
Jianxin Chen ◽  
...  

Abstract In this paper, a mesa-type 256×8 long-wavelength infrared detector is prepared by using InAs/GaSb type-II superlattice material with double barrieres structure. the area of each pixel is 25×25 μm2. The cut-off wavelength and dark current density of the detector at -0.05 V bias with liquid nitrogen temperature is 11.5 μm and 4.1×10-4 A/cm2, respectively. The power spectrum of low-frequency noise (1/f noise) at different temperatures have also been fitted by the Hooge model, and the correlations with dark current are extracted subsequently. The results shown that the 1/f noise of the detector is mainly caused by the generation-recombination current at a low reverse bias, however, when the reverse bias is high, the 1/f noise should be expressed by the sum of Igr noise and Ibtb noise which is ignored in the previous research. The 1/f noise-current correlation assessed in this work can provide insights into the low frequency noise characteristics of long-wavelength T2SL InAs/GaSb detectors, and allow for a better understanding of the main source of low-frequency noise.





2020 ◽  
Vol 305 ◽  
pp. 111908
Author(s):  
Łukasz Ciura ◽  
Małgorzata Kopytko ◽  
Piotr Martyniuk


2020 ◽  
Vol 67 (2) ◽  
pp. 547-551 ◽  
Author(s):  
Liqi Zhu ◽  
Jian Huang ◽  
Zongheng Xie ◽  
Zhuo Deng ◽  
Lu Chen ◽  
...  




Measurement ◽  
2021 ◽  
pp. 110657
Author(s):  
Krzysztof ACHTENBERG ◽  
Janusz MIKOŁAJCZYK ◽  
Carmine CIOFI ◽  
Graziella SCANDURRA ◽  
Zbigniew BIELECKI


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