scholarly journals Investigation of Low Frequency Noise-current Correlation for the InAs/GaSb T2SL Long-wavelength Infrared Detector

2021 ◽  
Author(s):  
Liang Wang ◽  
Liqi Zhu ◽  
Zhicheng Xu ◽  
Fangfang Wang ◽  
Jianxin Chen ◽  
...  
Keyword(s):  
Dark Current ◽  
Reverse Bias ◽  
Infrared Detector ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Long Wavelength ◽  
Noise Current ◽  
Current Correlation ◽  
Long Wavelength Infrared

Abstract In this paper, a mesa-type 256×8 long-wavelength infrared detector is prepared by using InAs/GaSb type-II superlattice material with double barrieres structure. the area of each pixel is 25×25 μm2. The cut-off wavelength and dark current density of the detector at -0.05 V bias with liquid nitrogen temperature is 11.5 μm and 4.1×10-4 A/cm2, respectively. The power spectrum of low-frequency noise (1/f noise) at different temperatures have also been fitted by the Hooge model, and the correlations with dark current are extracted subsequently. The results shown that the 1/f noise of the detector is mainly caused by the generation-recombination current at a low reverse bias, however, when the reverse bias is high, the 1/f noise should be expressed by the sum of Igr noise and Ibtb noise which is ignored in the previous research. The 1/f noise-current correlation assessed in this work can provide insights into the low frequency noise characteristics of long-wavelength T2SL InAs/GaSb detectors, and allow for a better understanding of the main source of low-frequency noise.

scholarly journals Low Frequency Noise in Tantalum Capacitors

1987 ◽  
Vol 12 (4) ◽  
pp. 215-221 ◽  
Author(s):  
D. T. Smith
Keyword(s):  
Power Spectrum ◽  
Bias Voltage ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Noise Current

Noise has been measured in a number of biased solid tantalum capacitors at frequencies down to 0.01 Hz. The noise current was found to have a 1/f power spectrum, and the amplitude varied with the bias voltage with a law in the range 1st to 4th power. There was a large difference in amplitudes between different capacitors of the same type.

scholarly journals Measurements of Low Frequency Noise of Infrared Photo-Detectors with Transimpedance Detection System

2014 ◽  
Vol 21 (3) ◽  
pp. 461-472 ◽  
Author(s):  
Łukasz Ciura ◽  
Andrzej Kolek ◽  
Waldemar Gawron ◽  
Andrzej Kowalewski ◽  
Dariusz Stanaszek
Keyword(s):  
Dark Current ◽  
Detection System ◽  
Power Spectra ◽  
Low Frequency ◽  
Frequency Noise ◽  
Noise Power ◽  
Low Frequency Noise ◽  
Leakage Resistance ◽  
Noise Measurements ◽  
Hgcdte Detector

Abstract The paper presents the method and results of low-frequency noise measurements of modern mid-wavelength infrared photodetectors. A type-II InAs/GaSb superlattice based detector with nBn barrier architecture is compared with a high operating temperature (HOT) heterojunction HgCdTe detector. All experiments were made in the range 1 Hz - 10 kHz at various temperatures by using a transimpedance detection system, which is examined in detail. The power spectral density of the nBn’s dark current noise includes Lorentzians with different time constants while the HgCdTe photodiode has more uniform 1/f - shaped spectra. For small bias, the low-frequency noise power spectra of both devices were found to scale linearly with bias voltage squared and were connected with the fluctuations of the leakage resistance. Leakage resistance noise defines the lower noise limit of a photodetector. Other dark current components give raise to the increase of low-frequency noise above this limit. For the same voltage biasing devices, the absolute noise power densities at 1 Hz in nBn are 1 to 2 orders of magnitude lower than in a MCT HgCdTe detector. In spite of this, low-frequency performance of the HgCdTe detector at ~ 230K is still better than that of InAs/GaSb superlattice nBn detector.

Low-frequency noise characteristics of extended wavelength InGaAs infrared detector

2009 ◽  
Author(s):  
Tao Li ◽  
Kafeng Zhang ◽  
Yongfu Li ◽  
Hengjing Tang ◽  
Xue Li ◽  
...  
Keyword(s):  
Infrared Detector ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Noise Characteristics

scholarly journals Low-frequency noise behavior at reverse bias region in InAs/GaSb superlattice photodiodes on mid-wave infrared

2013 ◽  
Author(s):  
T. Tansel ◽  
K. Kutluer ◽  
A. Muti ◽  
Ö. Salihoglu ◽  
A. Aydinli ◽  
...  
Keyword(s):  
Reverse Bias ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise

scholarly journals Low frequency noise-dark current correlations in HgCdTe infrared photodetectors

2020 ◽  
Vol 28 (16) ◽  
pp. 23660
Author(s):  
Liqi Zhu ◽  
Zhuo Deng ◽  
Jian Huang ◽  
Huijun Guo ◽  
Lu Chen ◽  
...  
Keyword(s):  
Dark Current ◽  
Low Frequency ◽  
Infrared Photodetectors ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Current Correlations

Low Frequency Noise Behavior in a-Si:H Schottky Barrier Devices

1996 ◽  
Vol 420 ◽  
Author(s):  
K. Aflatooni ◽  
A. Nathan ◽  
R. Hornsey
Keyword(s):  
Experimental Study ◽  
Schottky Barrier ◽  
Schottky Diode ◽  
Reverse Bias ◽  
Schottky Diodes ◽  
Low Frequency ◽  
Reverse Current ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Material Instability

AbstractWe present a systematic experimental study of low frequency noise behavior in Mo/a-Si:H Schottky diodes under reverse bias operation. The noise in the Schottky diode was found to increase with increasing reverse current and with an approximate 1/f behavior at low bias voltages, yielding a Hooge parameter in the range (2 to 3) × 10−4. At high reverse voltages, due to electrical stressing and hence, bias-induced material instability, a significant deviation from the 1/f behavior was observed.

Sign in / Sign up

Export Citation Format

Share Document