Experimental study of the series resistance effect and its impact on the compact modeling of the conduction characteristics of HfO2-based resistive switching memories

2021 ◽  
Vol 130 (5) ◽  
pp. 054503
Author(s):  
D. Maldonado ◽  
F. Aguirre ◽  
G. González-Cordero ◽  
A. M. Roldán ◽  
M. B. González ◽  
...  
Keyword(s):  
Experimental Study ◽  
Resistive Switching ◽  
Series Resistance ◽  
Compact Modeling

An insight into the dopant selection for CeO2-based resistive-switching memory system: a DFT and experimental study

2018 ◽  
Vol 8 (4) ◽  
pp. 839-851 ◽  
Author(s):  
Fayyaz Hussain ◽  
Muhammad Imran ◽  
Anwar Manzoor Rana ◽  
R. M. Arif Khalil ◽  
Ejaz Ahmad Khera ◽  
...  
Keyword(s):  
Experimental Study ◽  
Resistive Switching ◽  
Memory System ◽  
Resistive Switching Memory ◽  
System A ◽  
Selection For ◽  
Insight Into ◽  
Switching Memory

scholarly journals Volatile Resistive Switching Memory Based on Ag Ion Drift/Diffusion—Part II: Compact Modeling

2019 ◽  
Vol 66 (9) ◽  
pp. 3802-3808 ◽  
Author(s):  
Wei Wang ◽  
Mario Laudato ◽  
Elia Ambrosi ◽  
Alessandro Bricalli ◽  
Erika Covi ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Compact Modeling ◽  
Drift Diffusion ◽  
Resistive Switching Memory ◽  
Ion Drift ◽  
Switching Memory

Resistive switching in nonplanar HfO2-based structures with variable series resistance

2015 ◽  
Vol 33 (1) ◽  
pp. 01A108 ◽  
Author(s):  
Karol Čičo ◽  
Peter Jančovič ◽  
Jan Dérer ◽  
Vasilij Šmatko ◽  
Alica Rosová ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Series Resistance

Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part I: Experimental Study

2012 ◽  
Vol 59 (9) ◽  
pp. 2461-2467 ◽  
Author(s):  
Federico Nardi ◽  
Stefano Larentis ◽  
Simone Balatti ◽  
David C. Gilmer ◽  
Daniele Ielmini
Keyword(s):  
Experimental Study ◽  
Resistive Switching ◽  
Ion Migration

scholarly journals Compact Modeling Solutions for Oxide-Based Resistive Switching Memories (OxRAM)

2014 ◽  
Vol 4 (1) ◽  
pp. 1-14 ◽  
Author(s):  
Marc Bocquet ◽  
Hassen Aziza ◽  
Weisheng Zhao ◽  
Yue Zhang ◽  
Santhosh Onkaraiah ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Compact Modeling

scholarly journals Non-Uniform Spline Quasi-Interpolation to Extract the Series Resistance in Resistive Switching Memristors for Compact Modeling Purposes

Mathematics ◽  
2021 ◽  
Vol 9 (17) ◽  
pp. 2159
Author(s):  
María José Ibáñez ◽  
Domingo Barrera ◽  
David Maldonado ◽  
Rafael Yáñez ◽  
Juan Bautista Roldán
Keyword(s):  
Hafnium Oxide ◽  
Series Resistance ◽  
Numerical Procedure ◽  
Parameter Extraction ◽  
Compact Modeling ◽  
Mathematical Technique ◽  
Electrical Device ◽  
Essential Parameter ◽  
Device Operation

An advanced new methodology is presented to improve parameter extraction in resistive memories. The series resistance and some other parameters in resistive memories are obtained, making use of a two-stage algorithm, where the second one is based on quasi-interpolation on non-uniform partitions. The use of this latter advanced mathematical technique provides a numerically robust procedure, and in this manuscript, we focus on it. The series resistance, an essential parameter to characterize the circuit operation of resistive memories, is extracted from experimental curves measured in devices based on hafnium oxide as their dielectric layer. The experimental curves are highly non-linear, due to the underlying physics controlling the device operation, so that a stable numerical procedure is needed. The results also allow promising expectations in the massive extraction of new parameters that can help in the characterization of the electrical device behavior.

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