Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part I: Experimental Study

2012 ◽  
Vol 59 (9) ◽  
pp. 2461-2467 ◽  
Author(s):  
Federico Nardi ◽  
Stefano Larentis ◽  
Simone Balatti ◽  
David C. Gilmer ◽  
Daniele Ielmini
Keyword(s):  
Experimental Study ◽  
Resistive Switching ◽  
Ion Migration

An insight into the dopant selection for CeO2-based resistive-switching memory system: a DFT and experimental study

2018 ◽  
Vol 8 (4) ◽  
pp. 839-851 ◽  
Author(s):  
Fayyaz Hussain ◽  
Muhammad Imran ◽  
Anwar Manzoor Rana ◽  
R. M. Arif Khalil ◽  
Ejaz Ahmad Khera ◽  
...  
Keyword(s):  
Experimental Study ◽  
Resistive Switching ◽  
Memory System ◽  
Resistive Switching Memory ◽  
System A ◽  
Selection For ◽  
Insight Into ◽  
Switching Memory

Experimental study of the series resistance effect and its impact on the compact modeling of the conduction characteristics of HfO2-based resistive switching memories

2021 ◽  
Vol 130 (5) ◽  
pp. 054503
Author(s):  
D. Maldonado ◽  
F. Aguirre ◽  
G. González-Cordero ◽  
A. M. Roldán ◽  
M. B. González ◽  
...  
Keyword(s):  
Experimental Study ◽  
Resistive Switching ◽  
Series Resistance ◽  
Compact Modeling

Investigation of the Resistive Switching Mechanisms and Rectification Characteristics of HfO2-Based Resistive Random Access Memory Devices with Different Electrode Materials

2020 ◽  
Vol 20 (10) ◽  
pp. 6489-6494
Author(s):  
Batkhuyag Khorolsuren ◽  
Shenmin Lu ◽  
Chao Sun ◽  
Fang Jin ◽  
Wenqin Mo ◽  
...  
Keyword(s):  
Noble Metal ◽  
Resistive Switching ◽  
Electrode Materials ◽  
Metal Electrode ◽  
Ion Migration ◽  
Resistive Layer ◽  
Switching Mechanism ◽  
Oxygen Ion ◽  
Oxygen Ion Migration ◽  
Resistive Switching Mechanism

To study the substitutability of noble metal electrodes in memristors, the effect of Pt/HfO2/Ti structure on the replacement of noble metal electrode Pt by different electrodes was studied. Compared with the unsubstituted devices, the HfO2-based RRAM devices with TiN and TiOxNy electrodes devices showed good resistive switching performance and resistive switching mechanism under oxygen ion migration. Five devices were prepared, and their resistive switching mechanism under oxygen ion migration was investigated. Moreover, besides the resistive switching phenomenon of these RRAM devices, it was found that significant rectifying characteristics were exhibited in a highresistance state (HRS). This phenomenon can be explained by regulation of the Schottky barrier of the interface between the top electrode and the resistive layer, which can be influenced by the migration of oxygen vacancies.

scholarly journals Resistive Switching in Ge0.3Se0.7Films by Means of Copper Ion Migration

2007 ◽  
Vol 221 (11-12) ◽  
pp. 1469-1478 ◽  
Author(s):  
C. Schindler ◽  
X. Guo ◽  
A. Besmehn ◽  
R. Waser
Keyword(s):  
Resistive Switching ◽  
Copper Ion ◽  
Ion Migration
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