Computation of Peak Tunneling Current Density in Resonant Tunneling Diode Using Self-consistency Technique

2018 ◽  
pp. 33-39
Author(s):  
Arpan Deyasi ◽  
Biswarup Karmakar ◽  
Rupali Lodh ◽  
Pradipta Biswas
Keyword(s):  
Current Density ◽  
Resonant Tunneling ◽  
Tunneling Current ◽  
Resonant Tunneling Diode ◽  
Tunneling Diode ◽  
Self Consistency

RESONANT TUNNELING IN DOUBLE BARRIER SEMICONDUCTOR NANO-STRUCTURES

1995 ◽  
Vol 09 (23) ◽  
pp. 3039-3051
Author(s):  
DILIP K. ROY ◽  
AJIT SINGH
Keyword(s):  
Quantum Measurement ◽  
Current Density ◽  
Resonant Tunneling ◽  
Tunneling Current ◽  
Double Barrier ◽  
Tunneling Diode ◽  
Nano Structures ◽  
Current Densities ◽  
Double Barrier Resonant Tunneling ◽  
Measurement Approach

The principles of operation of a double barrier resonant tunneling diode (DBRTD) giving rise to negative differential conductivity effect are first reviewed. Next, the physics of resonant tunneling based on (i) the time-independent conventional approach and (ii) the time-dependent quantum measurement approach, as applied to a DBRTD, is discussed. Expressions for the resonant tunneling current densities through the barriers are then derived on the ideas of quantum measurement. Through the well the current, however, flows by the conventional mechanism. The three current density magnitudes are found to be identical under resonant conditions. Finally, an expression for the resonant tunneling current density due to a group of incident electrons is derived.

Improving the peak current density of resonant tunneling diode based on InP substrate

2017 ◽  
Vol 38 (6) ◽  
pp. 064005 ◽  
Author(s):  
Zhiqiang Li ◽  
Hailin Tang ◽  
Haitao Liu ◽  
Yi Liang ◽  
Qian Li ◽  
...  
Keyword(s):  
Current Density ◽  
Resonant Tunneling ◽  
Resonant Tunneling Diode ◽  
Peak Current Density ◽  
Peak Current ◽  
Tunneling Diode ◽  
Inp Substrate

scholarly journals Self-Consistent Scattering Calculation of Resonant Tunneling Diode Characteristics

VLSI Design ◽  
1998 ◽  
Vol 6 (1-4) ◽  
pp. 83-86 ◽  
Author(s):  
J. P. Sun ◽  
G. I. Haddad
Keyword(s):  
Transverse Momentum ◽  
Optical Phonon ◽  
Resonant Tunneling ◽  
Optical Model ◽  
Phonon Scattering ◽  
Resonant Tunneling Diode ◽  
Tunneling Diode ◽  
Optical Phonon Scattering ◽  
Self Consistent ◽  
Self Consistency

We perform a self-consistent calculation of resonant tunneling diode (RTD) I-V characteristics including optical phonon scattering. The self-consistency is obtained by solving the Schrödinger equation and Poisson’s equation iteratively with the Thomas-Fermi approximation used for the device contact regions. For evaluation of phonon-assisted current density, the optical phonon scattering in the quantum well is modeled using the optical model potential. Electron transverse momentum is also incorporated. The calculated current and electron wavefunction illustrate the optical model and effects of the phonon scattering on the current transport. The I-V characteristics we obtain from the model calculation are in good agreement with experimental results. This work manifests the importance of including self-consistency, optical phonon scattering, and electron transverse momentum in modeling realistic RTD structures.

scholarly journals A Dual-Pass High Current Density Resonant Tunneling Diode for Terahertz Wave Applications

2015 ◽  
Vol 36 (12) ◽  
pp. 1295-1298 ◽  
Author(s):  
K. J. P. Jacobs ◽  
B. J. Stevens ◽  
O. Wada ◽  
T. Mukai ◽  
D. Ohnishi ◽  
...  
Keyword(s):  
Current Density ◽  
Resonant Tunneling ◽  
High Current Density ◽  
Terahertz Wave ◽  
Resonant Tunneling Diode ◽  
High Current ◽  
Tunneling Diode ◽  
Dual Pass
Sign in / Sign up

Export Citation Format

Share Document