A novel method to detect wafer-bonding energy using function fitting

ABSTRACTThis paper reports on a novel, bonding-free method to fabricate silicon carbide-on-insulator (SiCOI) substrates. The process bypasses wafer bonding by using a high deposition rate polysilicon process in conjunction with wet chemical etching to produce wafer-thick polysilicon layers that serve as substrates for the SiCOI structures. Because wafer bonding is not used, insulators of various material types and thickness can be used. Using this method, transfer percentages over 99% are readily achievable. Various applications could benefit from this technology, including high temperature SiC-based microelectromechanical systems (MEMS) and SiC electronic devices.

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A novel method for nanoprecision alignment in wafer bonding applications

Journal of Micromechanics and Microengineering ◽

10.1088/0960-1317/17/7/s01 ◽

2007 ◽

Vol 17 (7) ◽

pp. S61-S67 ◽

Cited By ~ 15

Author(s):

Liudi Jiang ◽

G Pandraud ◽

P J French ◽

S M Spearing ◽

M Kraft

Keyword(s):

Wafer Bonding ◽

Novel Method

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Electrical characterisation of UHV-bonded silicon interfaces

MRS Proceedings ◽

10.1557/proc-681-i4.4 ◽

2001 ◽

Vol 681 ◽

Cited By ~ 3

Author(s):

A. Reznicek ◽

S. Senz ◽

O. Breitenstein ◽

R. Scholz ◽

U. Gösele

Keyword(s):

Current Density ◽

Wafer Bonding ◽

Applied Voltage ◽

High Current Density ◽

Strong Dependence ◽

High Vacuum ◽

Ultra High Vacuum ◽

Bonding Energy ◽

Constant Density ◽

Trap States

ABSTRACTDirect wafer bonding can be used to mechanically and electrically connect semiconductors. In our experiments two 100 mm diameter (100) Si wafers (n-doping: 1014 cm−3) are first cleaned by standard chemical cleaning (RCA 1, 2). The surface is terminated by hydrogen after a HF dipping. The wafers are prebonded in air to protect the surface. After introduction into the ultra high vacuum (UHV) system the wafers are separated again. The hydrogen termination is released in a heating chamber. RHEED confirmed a surface reconstruction. The wafers are then cooled down to room temperature and bonded in UHV. The bonding energy is very close to the bulk bonding energy.Measurements of whole n-n wafers showed a linear relationship of voltage and current at a low current density of 0.05 A/cm2. The current flow is inhomogeneous, which is visible in IR- thermography images. Above 0.1 V the current density first saturates, but increases super- linearly for higher voltages. The electrical properties of a grain boundary can be modeled by a double Schottky barrier. The barrier height decreases with increasing applied voltage. C-V measurements show a strong dependence of capacitance on frequency, temperature and applied voltage.The capacitance increases with higher temperature and lower frequency. The interface state density can be estimated from the low temperature and high frequency capacitance limit as Dit = 1·1011 cm−2 eV−1 assuming a constant density of states.We can conclude that in order to avoid the undesirable effect of the potential barrier and trap states at the bonding interface a high doping near the interface is required for the application of wafer bonding to devices with a high current density across the bonded interface.

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Novel method to determine base resistance in SiGe HBT HICUM based on rational function fitting

2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) ◽

10.1109/icsict.2014.7021629 ◽

2014 ◽

Author(s):

Yabin Sun ◽

Jun Fu ◽

Ji Yang ◽

Jun Xu ◽

Yudong Wang ◽

...

Keyword(s):

Rational Function ◽

Base Resistance ◽

Sige Hbt ◽

Function Fitting ◽

Novel Method

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The Study of the Bonding Energy on Silicon-to-Glass Wafer Bonding

ECS Transactions ◽

10.1149/1.3483541 ◽

2019 ◽

Vol 33 (4) ◽

pp. 501-507 ◽

Cited By ~ 3

Author(s):

Ta-Ko Chuang ◽

Alex Usenko ◽

Jeffery Cites

Keyword(s):

Wafer Bonding ◽

Bonding Energy ◽

Glass Wafer

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Ammonium Hydroxide Effect on Low-Temperature Wafer Bonding Energy Enhancement

Electrochemical and Solid-State Letters ◽

10.1149/1.1857671 ◽

2005 ◽

Vol 8 (3) ◽

pp. G74 ◽

Cited By ~ 24

Author(s):

Y.-L. Chao ◽

Q.-Y. Tong ◽

T.-H. Lee ◽

M. Reiche ◽

R. Scholz ◽

...

Keyword(s):

Low Temperature ◽

Wafer Bonding ◽

Ammonium Hydroxide ◽

Bonding Energy

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The removal and morphology of intact biofilms from implanted venous access devices

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100141470 ◽

1995 ◽

Vol 53 ◽

pp. 1020-1021

Author(s):

M.A. Gregory ◽

G.P. Hadley

Keyword(s):

Patient Selection ◽

Surgical Oncology ◽

Venous Access ◽

Common Procedure ◽

Indwelling Catheters ◽

Careful Patient ◽

Novel Method ◽

The Subject ◽

Vascular Catheters ◽

Venous Access Devices

The insertion of implanted venous access systems for children undergoing prolonged courses of chemotherapy has become a common procedure in pediatric surgical oncology. While not permanently implanted, the devices are expected to remain functional until cure of the primary disease is assured. Despite careful patient selection and standardised insertion and access techniques, some devices fail. The most commonly encountered problems are colonisation of the device with bacteria and catheter occlusion. Both of these difficulties relate to the development of a biofilm within the port and catheter. The morphology and evolution of biofilms in indwelling vascular catheters is the subject of ongoing investigation. To date, however, such investigations have been confined to the examination of fragments of biofilm scraped or sonicated from sections of catheter. This report describes a novel method for the extraction of intact biofilms from indwelling catheters.15 children with Wilm’s tumour and who had received venous implants were studied. Catheters were removed because of infection (n=6) or electively at the end of chemotherapy.

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