Toward Peltier-cooled mid-infrared HgCdTe lasers: Analyzing the temperature quenching of stimulated emission at ∼6 μm wavelength from HgCdTe quantum wells

2021 ◽  
Vol 130 (21) ◽  
pp. 214302
Author(s):  
K. E. Kudryavtsev ◽  
V. V. Rumyantsev ◽  
V. V. Utochkin ◽  
M. A. Fadeev ◽  
V. Ya. Aleshkin ◽  
...  

1996 ◽  
Vol 450 ◽  
Author(s):  
P. Boucaud ◽  
S. Sauvage ◽  
O. Gauthier-Lafaye ◽  
Z. Moussa ◽  
F.-H. Julien ◽  
...  

ABSTRACTWe have investigated the mid-infrared spontaneous and stimulated emission between confined subbands in the conduction band of GaAs/AlGaAs quantum wells. The carriers which give rise to the intersubband emission are excited in the upper subbands using an intersubband optical pumping in coupled asymmetric quantum wells. The quantum wells are designed using phonon engineering in order to obtain population inversion between the second and first excited subband. This is obtained by adjusting the subband energy spacing between E2 and E1 close to the optical phonon energy which in turn allows an efficient relaxation. We have first observed intersubband spontaneous emission between E3 and E2 at 14 μm using an intersubband pumping with a CO2 laser in resonance with the E1-E3 transition. In a second set of experiments, the quantum wells are embedded in an infrared waveguide. We have measured the stimulated intersubband gain using a picosecond two-color free electron laser. The first color bleaches the E1-E3 transition and provides the population inversion. The intersubband stimulated gain is measured versus the waveguide length and photon energy. Stimulated gains ≈ 80 cm−1 are reported thus demonstrating that laser emission under optical pumping appears feasible in optimized structures. Finally, we show that intersubband emission can also be observed in quantum wells using an interband optical pumping.



1995 ◽  
Vol 395 ◽  
Author(s):  
D.A.S. Loeber ◽  
J.M. Redwing ◽  
N.G. Anderson ◽  
M.A. Tischler

ABSTRACTEdge emission characteristics of optically pumped GaN-AlGaN double heterostructures and quantum wells are examined. The samples, which were grown by metalorganic vapor phase epitaxy, are photoexcited with light from a pulsed nitrogen laser. The pump light is focused to a narrow stripe on the sample surface, oriented perpendicular to a cleaved edge, and the edge luminescence is collected and analyzed. We first compare emission characteristics of highly excited GaN-AlGaN double heterostructures grown simultaneously on SiC and sapphire substrates. Polarization resolved spectral properties of edge luminescence from both structures is studied as a function of pump intensity and excitation stripe length. Characteristics indicative of stimulated emission are observed, particularly in the sample grown on SiC. We then present results demonstrating laser emission from a GaN-AlGaN separate-confinement quantum-well heterostructure. At high pump intensities, band edge emission from the quantum well exhibits five narrow (∼1 Å) modes which are evenly spaced by 10Å to within the resolution of the spectrometer. This represents the first demonstration of laser action in a GaN-based quantum-well structure.



1992 ◽  
Vol 39 (11) ◽  
pp. 2646
Author(s):  
E.B. Dupont ◽  
D. Delacourt ◽  
M. Papuchon


2011 ◽  
Vol 4 (8) ◽  
pp. 082103 ◽  
Author(s):  
Mohamed Lachab ◽  
Krishnan Balakrishnan ◽  
Bin Zhang ◽  
Joe Dion ◽  
Qhalid Fareed ◽  
...  




2015 ◽  
Vol 643 ◽  
pp. 012078 ◽  
Author(s):  
A V Selivanov ◽  
I S Makhov ◽  
V Yu Panevin ◽  
A N Sofronov ◽  
D A Firsov ◽  
...  


1996 ◽  
Vol 19 (1) ◽  
pp. 69-79 ◽  
Author(s):  
F.H. Julien ◽  
Z. Moussa ◽  
P. Boucaud ◽  
Y. Lavon ◽  
A. Sa'ar ◽  
...  


Author(s):  
Yoav Lavon ◽  
Amir Sa’ar ◽  
Francois H. Julien ◽  
Jean-Pierre Leburton ◽  
Richard Planel


2011 ◽  
Vol 33 (11) ◽  
pp. 1817-1819 ◽  
Author(s):  
G. Sęk ◽  
F. Janiak ◽  
M. Motyka ◽  
K. Ryczko ◽  
J. Misiewicz ◽  
...  


1998 ◽  
Vol 264-268 ◽  
pp. 1433-1436
Author(s):  
L. Calcagnile ◽  
G. Coli ◽  
D. Rinaldi ◽  
R. Cingolani ◽  
H. Tang ◽  
...  


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