Spontaneous and Stimulated Intersubband Emission Under Optical Pumping

1996 ◽  
Vol 450 ◽  
Author(s):  
P. Boucaud ◽  
S. Sauvage ◽  
O. Gauthier-Lafaye ◽  
Z. Moussa ◽  
F.-H. Julien ◽  
...  

ABSTRACTWe have investigated the mid-infrared spontaneous and stimulated emission between confined subbands in the conduction band of GaAs/AlGaAs quantum wells. The carriers which give rise to the intersubband emission are excited in the upper subbands using an intersubband optical pumping in coupled asymmetric quantum wells. The quantum wells are designed using phonon engineering in order to obtain population inversion between the second and first excited subband. This is obtained by adjusting the subband energy spacing between E2 and E1 close to the optical phonon energy which in turn allows an efficient relaxation. We have first observed intersubband spontaneous emission between E3 and E2 at 14 μm using an intersubband pumping with a CO2 laser in resonance with the E1-E3 transition. In a second set of experiments, the quantum wells are embedded in an infrared waveguide. We have measured the stimulated intersubband gain using a picosecond two-color free electron laser. The first color bleaches the E1-E3 transition and provides the population inversion. The intersubband stimulated gain is measured versus the waveguide length and photon energy. Stimulated gains ≈ 80 cm−1 are reported thus demonstrating that laser emission under optical pumping appears feasible in optimized structures. Finally, we show that intersubband emission can also be observed in quantum wells using an interband optical pumping.

2003 ◽  
Vol 02 (06) ◽  
pp. 427-435
Author(s):  
V. A. SHALYGIN ◽  
L. E. VOROBJEV ◽  
V. Yu. PANEVIN ◽  
D. A. FIRSOV ◽  
S. HANNA ◽  
...  

The technique of photoluminescence (PL) studies based on intense picosecond excitation of electron–hole pairs is applied to investigate the electron energy structure including the positions of high-lying excited levels in stepped quantum wells (QWs). The spectra of PL in regimes of spontaneous and stimulated emission are studied under different excitation levels and light polarizations. Of special interest are intense photoluminescence signals from excited subbands. The feasibility of a e3–e2 intersubband population inversion in stepped QWs is demonstrated and the influence of Auger recombination was examined.


Author(s):  
V.V. Rumyantsev ◽  
L.S. Bovkun ◽  
A.M. Kadykov ◽  
M.A. Fadeev ◽  
A.A. Dubinov ◽  
...  

AbstractWe investigate the prospects of HgTe/HgCdTe quantum wells for long-wavelength interband lasers (λ = 15–30 μm). The properties of stimulated emission (SE) and magnetoabsorbtion data of QWs structures with wide-gap HgCdTe dielectric waveguide provide an insight on dominating non-radiative carrier recombination mechanism. It is shown that the carrier heating under intense optical pumping is the main factor limiting the SE wavelength and intensity, since the Auger recombination is greatly enhanced when carriers populate high energy states in the valence band.


1996 ◽  
Vol 449 ◽  
Author(s):  
D. A. S. Loeber ◽  
N. G. Anderson ◽  
J. M. Redwing ◽  
J. S. Flynn ◽  
G. M. Smith ◽  
...  

ABSTRACTStimulated emission characteristics are examined for GaN-AlGaN separate-confinement quantum-well heterostructures grown by MOVPE on 4H-SiC substrates. We specifically focus on comparison of structures with different quantum well active region designs. Polarization resolved edge emission spectra and stimulated emission thresholds are obtained under optical pumping using a stripe excitation geometry. Stimulated emission characteristics are studied as a function of the number of quantum wells in the structure, and are correlated with surface photoluminescence properties. We find reduced stimulated emission thresholds and increased surface photoluminescence intensities as the number of quantum wells is reduced, with the best results obtained for a single-quantum-well structure. These results should provide useful information for the design of GaN-based quantum well lasers.


2007 ◽  
Vol 06 (03n04) ◽  
pp. 241-244 ◽  
Author(s):  
D. A. FIRSOV ◽  
L. E. VOROBJEV ◽  
M. A. BARZILOVICH ◽  
V. YU. PANEVIN ◽  
I. V. MIKHAYLOV ◽  
...  

Optical phenomena in quantum dot and quantum well nanostructures aimed at the development of mid-infrared lasers based on intraband electron transitions are investigated in the conditions of interband optical pumping. Evolution of photoluminescence spectra and interband light absorption with intensity of interband optical excitation is investigated in InAs / GaAs quantum dot structures. Optically induced intersubband mid-infrared light absorption is studied in undoped tunnel-coupled GaAs / AlGaAs quantum wells. The stabilization of the electron concentration at the ground level of tunnel-coupled quantum wells under increasing pumping level is established.


2021 ◽  
Vol 130 (21) ◽  
pp. 214302
Author(s):  
K. E. Kudryavtsev ◽  
V. V. Rumyantsev ◽  
V. V. Utochkin ◽  
M. A. Fadeev ◽  
V. Ya. Aleshkin ◽  
...  

2016 ◽  
Vol 685 ◽  
pp. 627-631
Author(s):  
D.I. Gorn ◽  
Alexander V. Voitsekhovskii

This paper is devoted to the consideration of currently available studies on obtaining stimulated infrared emission in structures based on HgCdTe quantum wells. Also analysis and interpretation of discussed experimental results are presented in this article.


JETP Letters ◽  
2019 ◽  
Vol 110 (5) ◽  
pp. 313-318 ◽  
Author(s):  
V. A. Solov’ev ◽  
M. Yu. Chernov ◽  
S. V. Morozov ◽  
K. E. Kudryavtsev ◽  
A. A. Sitnikova ◽  
...  

1998 ◽  
Vol 83 (6) ◽  
pp. 2920-2926 ◽  
Author(s):  
O. Gauthier-Lafaye ◽  
S. Sauvage ◽  
P. Boucaud ◽  
F. H. Julien ◽  
F. Glotin ◽  
...  

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