The transmission coefficient and electronic
conductance of a graphene monolayer in the presence of multi-electrostatic
barriers are theoretically investigated using the transfer matrix method (TMM).
The transmission coefficient, conductance, and Fano factor are evaluated as a
function of the number and width of the barriers, angle/energy of incidence, as
well as the applied potential at each barrier. We find that the transmission
coefficient presents a series of resonances that depends on the number and
widths of the barriers. Furthermore, we show that the resonant states can be
suppressed for larger incidence angles and barrier widths and tuned towards
lower energies. Consequently, the proposed structure can be used to fabricate
new optoelectronic devices based on (ON/OFF) states as tunable field-effect
transistors.
Quantum Tunneling Mechanisms in Monolayer Graphene Modulated by Multiple Electrostatic Barriers
