scholarly journals Quantum Tunneling Characteristics in Monolayer Graphene Modulated by Multiple Electrostatic Barriers

2021 ◽  
Author(s):  
Hassen Dakhlaouhi ◽  
Walid Belhadj ◽  
Bryan Wong
Keyword(s):  
Transmission Coefficient ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Optoelectronic Devices ◽  
Fano Factor ◽  
Monolayer Graphene ◽  
Graphene Monolayer ◽  
Applied Potential ◽  
Resonant States ◽  
Electronic Conductance

The transmission coefficient and electronic conductance of a graphene monolayer in the presence of multi-electrostatic barriers are theoretically investigated using the transfer matrix method (TMM). The transmission coefficient, conductance, and Fano factor are evaluated as a function of the number and width of the barriers, angle/energy of incidence, as well as the applied potential at each barrier. We find that the transmission coefficient presents a series of resonances that depends on the number and widths of the barriers. Furthermore, we show that the resonant states can be suppressed for larger incidence angles and barrier widths and tuned towards lower energies. Consequently, the proposed structure can be used to fabricate new optoelectronic devices based on (ON/OFF) states as tunable field-effect transistors.

scholarly journals Quantum Tunneling Mechanisms in Monolayer Graphene Modulated by Multiple Electrostatic Barriers

2021 ◽  
Author(s):  
Hassen Dakhlaoui ◽  
Walid Belhadj ◽  
Bryan Wong
Keyword(s):  
Transmission Coefficient ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Optoelectronic Devices ◽  
Fano Factor ◽  
Monolayer Graphene ◽  
Graphene Monolayer ◽  
Applied Potential ◽  
Resonant States ◽  
Electronic Conductance

The transmission coefficient and electronic conductance of a graphene monolayer in the presence of multi-electrostatic barriers are theoretically investigated using the transfer matrix method (TMM). The transmission coefficient, conductance, and Fano factor are evaluated as a function of the number and width of the barriers, angle/energy of incidence, as well as the applied potential at each barrier. We find that the transmission coefficient presents a series of resonances that depends on the number and widths of the barriers. Furthermore, we show that the resonant states can be suppressed for larger incidence angles and barrier widths and tuned towards lower energies. Consequently, the proposed structure can be used to fabricate new optoelectronic devices based on (ON/OFF) states as tunable field-effect transistors.

scholarly journals Quantum Tunneling Characteristics in Monolayer Graphene Modulated by Multiple Electrostatic Barriers

2021 ◽  
Author(s):  
Hassen Dakhlaouhi ◽  
Walid Belhadj ◽  
Bryan Wong
Keyword(s):  
Transmission Coefficient ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Optoelectronic Devices ◽  
Fano Factor ◽  
Monolayer Graphene ◽  
Graphene Monolayer ◽  
Applied Potential ◽  
Resonant States ◽  
Electronic Conductance

The transmission coefficient and electronic conductance of a graphene monolayer in the presence of multi-electrostatic barriers are theoretically investigated using the transfer matrix method (TMM). The transmission coefficient, conductance, and Fano factor are evaluated as a function of the number and width of the barriers, angle/energy of incidence, as well as the applied potential at each barrier. We find that the transmission coefficient presents a series of resonances that depends on the number and widths of the barriers. Furthermore, we show that the resonant states can be suppressed for larger incidence angles and barrier widths and tuned towards lower energies. Consequently, the proposed structure can be used to fabricate new optoelectronic devices based on (ON/OFF) states as tunable field-effect transistors.

The effect of thickness on the optoelectronic properties of organic field-effect transistors: towards molecular crystals at monolayer limit

2020 ◽  
Vol 8 (38) ◽  
pp. 13154-13168
Author(s):  
Yanwei Fan ◽  
Jie Liu ◽  
Wenping Hu ◽  
Yunqi Liu ◽  
Lang Jiang
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Recent Progress ◽  
Field Effect Transistors ◽  
Molecular Crystals ◽  
Optoelectronic Devices ◽  
Optoelectronic Properties ◽  
Organic Field Effect Transistors

This manuscript reviews recent progress in the ultrathin monolayer molecular crystals (MMCs) for high performance optoelectronic devices.

scholarly journals Highly Aligned Polymeric Nanowire Etch-Mask Lithography Enabling the Integration of Graphene Nanoribbon Transistors

Nanomaterials ◽  
2020 ◽  
Vol 11 (1) ◽  
pp. 33
Author(s):  
Sangheon Jeon ◽  
Pyunghwa Han ◽  
Jeonghwa Jeong ◽  
Wan Sik Hwang ◽  
Suck Won Hong
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Large Scale ◽  
Field Effect Transistors ◽  
Graphene Nanoribbons ◽  
Chemical Vapor ◽  
Spatial Arrangement ◽  
Deposition Process ◽  
Graphene Monolayer ◽  
Polymer Nanowires

Graphene nanoribbons are a greatly intriguing form of nanomaterials owing to their unique properties that overcome the limitations associated with a zero bandgap of two-dimensional graphene at room temperature. Thus, the fabrication of graphene nanoribbons has garnered much attention for building high-performance field-effect transistors. Consequently, various methodologies reported previously have brought significant progress in the development of highly ordered graphene nanoribbons. Nonetheless, easy control in spatial arrangement and alignment of graphene nanoribbons on a large scale is still limited. In this study, we explored a facile, yet effective method for the fabrication of graphene nanoribbons by employing orientationally controlled electrospun polymeric nanowire etch-mask. We started with a thermal chemical vapor deposition process to prepare graphene monolayer, which was conveniently transferred onto a receiving substrate for electrospun polymer nanowires. The polymeric nanowires act as a robust etching barrier underlying graphene sheets to harvest arrays of the graphene nanoribbons. On varying the parametric control in the process, the size, morphology, and width of electrospun polymer nanowires were easily manipulated. Upon O2 plasma etching, highly aligned arrays of graphene nanoribbons were produced, and the sacrificial polymeric nanowires were completely removed. The graphene nanoribbons were used to implement field-effect transistors in a bottom-gated configuration. Such approaches could realistically yield a relatively improved current on–off ratio of ~30 higher than those associated with the usual micro-ribbon strategy, with the clear potential to realize reproducible high-performance devices.

Coordination Polymer Frameworks for Next Generation Optoelectronic Devices

2020 ◽  
Author(s):  
Hemali Rathnayake ◽  
Sheeba Dawood
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Organic Frameworks ◽  
Optoelectronic Devices ◽  
Lithium Ion ◽  
Optical And Electrical Properties ◽  
Metal Organic ◽  
Enhanced Luminescence ◽  
Current Database

Metal–organic frameworks (MOFs), which belong to a sub-class of coordination polymers, have been significantly studied in the fields of gas storage and separation over the last two decades. There are 80,000 synthetically known MOFs in the current database with known crystal structures and some physical properties. However, recently, numerous functional MOFs have been exploited to use in the optoelectronic field owing to some unique properties of MOFs with enhanced luminescence, electrical, and chemical stability. This book chapter provides a comprehensive summary of MOFs chemistry, isoreticular synthesis, and properties of isoreticular MOFs, synthesis advancements to tailor optical and electrical properties. The chapter mainly discusses the research advancement made towards investigating optoelectronic properties of IRMOFs. We also discuss the future prospective of MOFs for electronic devices with a proposed roadmap suggested by us. We believe that the MOFs-device roadmap should be one meaningful way to reach MOFs milestones for optoelectronic devices, particularly providing the potential roadmap to MOF-based field-effect transistors, photovoltaics, thermoelectric devices, and solid-state electrolytes and lithium ion battery components. It may enable MOFs to be performed in their best, as well as allowing the necessary integration with other materials to fabricate fully functional devices in the next few decades.

scholarly journals Memtransistors Based on Nanopatterned Graphene Ferroelectric Field-Effect Transistors

Nanomaterials ◽  
2020 ◽  
Vol 10 (7) ◽  
pp. 1404
Author(s):  
Mircea Dragoman ◽  
Adrian Dinescu ◽  
Florin Nastase ◽  
Daniela Dragoman
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Atomic Layer ◽  
Ferroelectric Material ◽  
Graphene Monolayer ◽  
Graphene Field Effect Transistor ◽  
Effect Transistor ◽  
Graphene Fet ◽  
20 Nm ◽  
Nanopatterned Graphene

The ultimate memristor, which acts as resistive memory and an artificial neural synapse, is made from a single atomic layer. In this manuscript, we present experimental evidence of the memristive properties of a nanopatterned ferroelectric graphene field-effect transistor (FET). The graphene FET has, as a channel, a graphene monolayer transferred onto an HfO2-based ferroelectric material, the channel being nanopatterned with an array of holes with a diameter of 20 nm.

scholarly journals A model of carrier density and drain current for monolayer graphene field-effect transistors

AIP Advances ◽  
2019 ◽  
Vol 9 (2) ◽  
pp. 025222 ◽  
Author(s):  
Feng Zhuang ◽  
Wanling Deng ◽  
Xiaoyu Ma ◽  
Junkai Huang
Keyword(s):  
Carrier Density ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Drain Current ◽  
Monolayer Graphene

The effect of 1D- and 2D-polymorphs on organic single-crystal optoelectronic devices: lasers and field effect transistors

2018 ◽  
Vol 6 (30) ◽  
pp. 7994-8002 ◽  
Author(s):  
Qing Liao ◽  
Zhen Wang ◽  
Qinggang Gao ◽  
Zhaoyi Zhang ◽  
Jiahuan Ren ◽  
...  
Keyword(s):  
Quantum Yield ◽  
Single Crystal ◽  
Field Effect ◽  
Carrier Mobility ◽  
Field Effect Transistors ◽  
Optoelectronic Devices ◽  
Laser Threshold ◽  
Photoluminescence Quantum Yield ◽  
Organic Single Crystal ◽  
Higher Carrier Mobility

The 2D-microdisk polymorphs of TPDSB exhibit a higher photoluminescence quantum yield (Φ), a lower laser threshold and a higher carrier mobility than 1D-microwire polymorphs.

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